An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced long...An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced longitudinal pressure gradient.But accumulation of pollutants such as N_2 and O_2 will decrease the adsorption ability of the NEG,leading to a reduction of NEG lifetime.Therefore,an NEG thin film coated with a layer of Pd,which has high diffusion rate and absorption ability for H_2,can extend the service life of NEG and improve the pumping rate of H_2 as well.In this paper,with argon as discharge gas,a magnetron sputtering method is adopted to prepare TiZrV-Pd films in a long straight pipe.By SEM measurement,deposition rates of TiZrV-Pd films are analyzed under different deposition parameters,such as magnetic field strength,gas flow rate,discharge current,discharge voltage and working pressure.By comparing the experimental results with the simulation results based on Sigmund's theory,the Pd deposition rate C can be estimated by the sputtered depth.展开更多
Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prep...Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy （AFM）, Raman spectroscopy, nanoindentation, and Fourier transform infrared （FTIR） spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases.展开更多
La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by...La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly （100） oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices.展开更多
Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are inve...Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.展开更多
Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties ...Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties GdTbFeCo thin film were investigated by the variable control method. And the influence mechanism was analyzed in detail. After the sputtering parameters were optimized, it was found that when the distance between target and substrate was 72 ram, the thin film thickness was 120 nm, and the sputtering power, sputtering pressure and sputtering time was 75 W, 0.5 Pa and 613 s, respectively, the coercivity with perpendicular anisotropy could be as high as 6735 Oe, and the squareness ratio of the hysteresis loop was almost equal to 1.展开更多
A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide rang...A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder.The films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman spectroscopy.The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-3.The C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density.展开更多
A damascene structure of phase change memory （PCM） is fabricated successfully with the chemical mechanical polishing （CMP） method, and the CMP of Ge2Sb2Te5 （GST） and Ti films is investigated. The polished surfac...A damascene structure of phase change memory （PCM） is fabricated successfully with the chemical mechanical polishing （CMP） method, and the CMP of Ge2Sb2Te5 （GST） and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy （SEM） and an energy dispersive spectrometer （EDS）. The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA.展开更多
he present paper focuses on the modifying effects of ion beam mixing, ion im-planting and ion sputtering on hydrogen evolution electrodes. It was discovered thatthe four types of electrodes possessed excellent catalyt...he present paper focuses on the modifying effects of ion beam mixing, ion im-planting and ion sputtering on hydrogen evolution electrodes. It was discovered thatthe four types of electrodes possessed excellent catalytic activity in acid or alkalinemedia and potential stability in long term electrolysis of water under high currentdensity. Their stability and applying life-span greatly surpass those of other elec-trodes activated by electrodepositing and other method. The effects of temperatureand roughness on function of electrodes were also examined. XPS and AES wereapplied to analyse the surface composition and bond states of the electrodes, andthe distribution of concentration varying with depth, and to explain the law of theexperiments .展开更多
This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam （FIB） Moire inversion method quantitatively. The curved FIB Moire pattern...This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam （FIB） Moire inversion method quantitatively. The curved FIB Moire patterns indicate that the copper interconnects are a series of curves with continuous variations instead of beelines. The control equation set of the copper interconnects central lines is attained through the Moire inversion method. This work can be extended to inspect the structural defects and provide a reliable support for the interconnects structure fabrication.展开更多
Ferroelectric materials are widely applied in the ferroelectronic devices,photovoltaics,and so on.Ultrathin ferroelectric thin films are highly desired for their applications,which still remain a challenge.In this wor...Ferroelectric materials are widely applied in the ferroelectronic devices,photovoltaics,and so on.Ultrathin ferroelectric thin films are highly desired for their applications,which still remain a challenge.In this work,the ultrathin barium titanate(BaTiO_(3),BTO)films are deposited directly on the fluorine-doped tin oxide glass(SnO_(2):F,FTO)substrates by radio frequency magnetron sputtering method at different temperatures.All BTO ultrathin films exhibit strong ferroelectric properties.Interestingly,BTO thin films deposited at room temperature(RT)also exhibit robust ferroelectricity.The polar domains are switched reversibly with a phase degree of~180°by piezoelectric force microscopy for the BTO thin films deposited at room temperature,attributing to the strain and ion migration.展开更多
The CuZnSn（CZT） precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu_2ZnSnSe_4（CZTSe） absorber thin films on molybdenum subst...The CuZnSn（CZT） precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu_2ZnSnSe_4（CZTSe） absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 ℃. The characterization methods of CZTSe thin films include X-ray diffraction（XRD）, energy dispersive spectroscopy（EDS）, scanning electron microscopy（SEM）, and X-ray photoelectron spectra（XPS） in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu^（1＋）, Zn^（2＋）, Sn^（4＋）, Se^（2）.With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV.展开更多
基金supported by the National Natural Science Funds of China(No.11205155)Fundamental Research Funds for the Central Universities(WK2310000041)
文摘An accelerator storage ring needs clean ultrahigh vacuum.A TiZrV non-evaporable getter(NEG) film deposited on interior walls of the chamber can realize distributed pumping,effective vacuum improvement and reduced longitudinal pressure gradient.But accumulation of pollutants such as N_2 and O_2 will decrease the adsorption ability of the NEG,leading to a reduction of NEG lifetime.Therefore,an NEG thin film coated with a layer of Pd,which has high diffusion rate and absorption ability for H_2,can extend the service life of NEG and improve the pumping rate of H_2 as well.In this paper,with argon as discharge gas,a magnetron sputtering method is adopted to prepare TiZrV-Pd films in a long straight pipe.By SEM measurement,deposition rates of TiZrV-Pd films are analyzed under different deposition parameters,such as magnetic field strength,gas flow rate,discharge current,discharge voltage and working pressure.By comparing the experimental results with the simulation results based on Sigmund's theory,the Pd deposition rate C can be estimated by the sputtered depth.
基金Project supported by the National Natural Science Foundation of China(Grant No.61235011)the Science Foundation of the Science and Technology Commission of Tianjin Municipality,China(Grant Nos.13JCYBJC17300 and 12JCQNIC01200)
文摘Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy （AFM）, Raman spectroscopy, nanoindentation, and Fourier transform infrared （FTIR） spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11174142 and 11304160he National Basic Research Program of China under Grant No 2012CB921504the Special Fund for Public Interest of China under Grant No201510068
文摘La-doped and undoped xBiIn03-（1 - x）PbTi03 （BI-PT） thin films are deposited on （101）SrRuO3/（lOO）Pt/（lO0） MgO substrates by the rf-magnetron sputtering method. The structures of the films are characterized by XRD and SEM, and the results indicate that the thin films are grown with mainly （100） oriented and columnar structures. The ferroelectricity and piezoelectricity of the BI-PT films are also measured, and the measured results illustrate that both performances are effectively improved by the La-doping with suitable concentrations. These results will open up wide potential applications of the films in electronic devices.
基金Supported by the National Natural Science Foundation of China under Grant No 11304160the Special Fund for Public Interest of China under Grant No 201510068,and the NUPTFC under Grant No NY215111
文摘Properties of ferroelectric xBiInO3-（1-x）PbTiO3（xBI-（1-x）PT） thin films deposited on（101） SrRuO3/（200）Pt/（200） MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-（1-x）PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly（001） orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La2 O3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-（1-x）PT（x = 0.24） film has high ferroelectricities with remnant polarization2 Pr = 80μC/cm2 and coercive electric field 2 EC = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.
基金Funded by the Major Project of National Natural Science Foundation of China (60490290)
文摘Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties GdTbFeCo thin film were investigated by the variable control method. And the influence mechanism was analyzed in detail. After the sputtering parameters were optimized, it was found that when the distance between target and substrate was 72 ram, the thin film thickness was 120 nm, and the sputtering power, sputtering pressure and sputtering time was 75 W, 0.5 Pa and 613 s, respectively, the coercivity with perpendicular anisotropy could be as high as 6735 Oe, and the squareness ratio of the hysteresis loop was almost equal to 1.
文摘A kind of combinatorial material methodology,also known as continuous compositional spread method,was employed to investigate the relationship between the optical band gap and composition of SiC thin films.A wide range of SixCy thin films with different carbon contents have been successfully deposited in a single deposition by carefully arranging the sample position on the substrate holder.The films were characterized by surface profiler,x-ray photoelectron spectroscopy,ultraviolet-visible spectroscopy,fourier transform infrared spectroscopy and Raman spectroscopy.The carbon content y increases linearly from 0.28 to 0.72 while the sample position changed from 85 to 175 mm,the optical band gap changed between 1.27 and 1.99 eV,the maximum value corresponded to the stoichiometric SiC sample at the position of 130 mm,which has the highest Si?C bond density of 11.7×10^22 cm^-3.The C poor and C rich SixCy samples with y value less and larger than 0.5 were obtained while samples deviated from the position 130 mm,the optical band gap decreased with the Si?C bond density.
文摘A damascene structure of phase change memory （PCM） is fabricated successfully with the chemical mechanical polishing （CMP） method, and the CMP of Ge2Sb2Te5 （GST） and Ti films is investigated. The polished surface of wafer is analysed by scanning electron microscopy （SEM） and an energy dispersive spectrometer （EDS）. The measurements show that the damascene device structure of phase change memory is achieved by the CMP process. After the top electrode is deposited, dc sweeping test on PCM reveals that the phase change can be observed. The threshold current of array cells varies between 0.90mA and 1.15mA.
文摘he present paper focuses on the modifying effects of ion beam mixing, ion im-planting and ion sputtering on hydrogen evolution electrodes. It was discovered thatthe four types of electrodes possessed excellent catalytic activity in acid or alkalinemedia and potential stability in long term electrolysis of water under high currentdensity. Their stability and applying life-span greatly surpass those of other elec-trodes activated by electrodepositing and other method. The effects of temperatureand roughness on function of electrodes were also examined. XPS and AES wereapplied to analyse the surface composition and bond states of the electrodes, andthe distribution of concentration varying with depth, and to explain the law of theexperiments .
基金supported by the JSPS Postdoctoral Fellowship for Foreign Researchersthe National Basic Research Program of China ("973" Project) (2010CB631005,2011CB606105)+1 种基金the National Natural Science Foundation of China (11172151,90916010)Specialized Research Fund for the Doctoral Program of Higher Education(20090002110048)
文摘This paper explores the planar arrangement feature of the copper interconnects in a view field of several millimeters by the focused ion-beam （FIB） Moire inversion method quantitatively. The curved FIB Moire patterns indicate that the copper interconnects are a series of curves with continuous variations instead of beelines. The control equation set of the copper interconnects central lines is attained through the Moire inversion method. This work can be extended to inspect the structural defects and provide a reliable support for the interconnects structure fabrication.
基金financially supported by the National Key Research and Development Program of China(No.2019YFB1503500)
文摘Ferroelectric materials are widely applied in the ferroelectronic devices,photovoltaics,and so on.Ultrathin ferroelectric thin films are highly desired for their applications,which still remain a challenge.In this work,the ultrathin barium titanate(BaTiO_(3),BTO)films are deposited directly on the fluorine-doped tin oxide glass(SnO_(2):F,FTO)substrates by radio frequency magnetron sputtering method at different temperatures.All BTO ultrathin films exhibit strong ferroelectric properties.Interestingly,BTO thin films deposited at room temperature(RT)also exhibit robust ferroelectricity.The polar domains are switched reversibly with a phase degree of~180°by piezoelectric force microscopy for the BTO thin films deposited at room temperature,attributing to the strain and ion migration.
基金Project supported by the National Natural Science Foundation of China(No.61404086)the Basical Research Program of Shenzhen(Nos.JCYJ20150324140036866,JCYJ20150324141711581)the Natural Science Foundation of SZU(No.2014017)
文摘The CuZnSn（CZT） precursor thin films are grown by ion-beam sputtering Cu, Zn, Sn targets with different orders and then sputtering Se target to fabricate Cu_2ZnSnSe_4（CZTSe） absorber thin films on molybdenum substrates. They are annealed in the same vacuum chamber at 400 ℃. The characterization methods of CZTSe thin films include X-ray diffraction（XRD）, energy dispersive spectroscopy（EDS）, scanning electron microscopy（SEM）, and X-ray photoelectron spectra（XPS） in order to study the crystallographic properties, composition, surface morphology, electrical properties and so on. The results display that the CZTSe thin films got the strongest diffraction peak intensity and were with good crystalline quality and its morphology appeared smooth and compact with a sequence of Cu/Zn/Sn/Se, which reveals that the expected states for CZTSe are Cu^（1＋）, Zn^（2＋）, Sn^（4＋）, Se^（2）.With the good crystalline quality and close to ideal stoichiometric ratio the resistivity of the CZTSe film with the sequence of Cu/Zn/Sn/Se is lower, whose optical band gap is about 1.50 eV.
