A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimen...A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.展开更多
Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（ca...Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（carbazol-9-yl）-1, 2-dicyanobenzene（2 CzPN） as host. The OIDs doping with typical red phosphorescent dye [tris（1-phenylisoquinoline）iridium（Ⅲ）, Ir（piq）3], orange phosphorescent dye {bis[2-（4-tertbutylphenyl）benzothiazolato-N,C-（2＇）]iridium（acetylacetonate）,（tbt）2 Ir（acac）}, and blue phosphorescent dye [bis（2, 4-di-fluorophenylpyridinato）-tetrakis（1-pyrazolyl）borate iridium（Ⅲ）, FIr6] were investigated and compared. The（tbt）2 Ir（acac）-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the（tbt）2 Ir（acac）-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m^2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10^11 Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.展开更多
GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to ...GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.展开更多
This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is ...This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.展开更多
A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The ...A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.展开更多
A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For...A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).展开更多
Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit....Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.展开更多
Ultra-low-noise microwave signals play a driving role in the development of modern scientific technologies such as radar,communication,and sensing.On-chip photonic integration provides an attractive approach for the i...Ultra-low-noise microwave signals play a driving role in the development of modern scientific technologies such as radar,communication,and sensing.On-chip photonic integration provides an attractive approach for the implementation of ultra-low-noise microwave signal sources with attractive added advantages of being compact and lightweight,which are vitally important for real-world applications.Coupled optoelectronic oscillators(COEOs)with a hybrid structure of an optical loop and an optoelectronic loop are high-performance microwave photonic signal sources,which feature a unique advantage over conventional single-loop OEOs since they can achieve ultra-low phase noise with a relatively short cavity length.Here we report a wideband tunable ultra-lownoise integrated COEO(ICOEO),which is realized by integrating its key optoelectronic components(electrooptic modulator,photodetector,optical filter,etc.)on silicon-on-insulator(SOI).A wideband frequency tuning range from 2 GHz to 30 GHz is obtained,covering the entire S,C,X,Ku,and K bands.The phase noise is as low as−132 dBc/Hz@10 kHz,which is 19 dB better than that of the single-loop OEO with a similar cavity length.We also improved the long-term stability of the ICOEO by injection locking,and the Allan deviation of the produced microwave signal reaches 10^(−12)@1 s.The high-performance ICOEO can find a wide range of applications including modern radar,electronic warfare,and communication systems.展开更多
Organic micro-nanophotonics is an emerging interdisciplinary field that integrates photonics,nanoscience,and materials chemistry to explore light-matter interactions at the nanoscale.Compared with inorganic counterpar...Organic micro-nanophotonics is an emerging interdisciplinary field that integrates photonics,nanoscience,and materials chemistry to explore light-matter interactions at the nanoscale.Compared with inorganic counterparts,organic materials offer distinct advantages such as high photoluminescence efficiency,tunable optical properties,and facile processability,which enable flexible and multifunctional nanophotonic applications.This review summarizes recent advances in organic nanophotonic materials and their applications in integrated photonic devices.First,we highlight the unique photophysical characteristics of typical organic materials—including small molecules,conjugated polymers,and hybrid systems—emphasizing their structural versatility and excited-state dynamics.Next,we discuss representative organic photonic devices such as lasers,photodetectors,OLEDs,photovoltaics,modulators,and optical coding systems,focusing on how organic components enhance device functionality.We further review recent progress in the design and fabrication of integrated organic photonic platforms,including patterning techniques,photonic integrated circuits(PICs),and nonlinear photonic systems.Finally,we outline the remaining challenges in the field and provide perspectives on future research directions,particularly in the rational molecular design and structure-property relationship of organic materials.By offering a comprehensive overview,this review aims to promote innovation in the development of tunable,high-performance nanophotonic devices based on organic materials.展开更多
The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency char...The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency characteristic,and compatibility with microelectronic circuit.The module consists of 1×16 VCSEL array and 16-channel lasers driver with 0.35μm CMOS circuit by hybrid integration.During the test process,the module operates well at more than 2GHz in -3dB frequency bandwidth.展开更多
A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an M...A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.展开更多
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded...We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.展开更多
A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade (RGC) transimpedance amplifier (TIA) is designed.The small signal circuit model of DPD is given and the bandwidth...A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade (RGC) transimpedance amplifier (TIA) is designed.The small signal circuit model of DPD is given and the bandwidth design method of a monolithic photoreceiver is presented.An important factor which limits the bandwidth of DPD detector and the photoreceiver is presented and analyzed in detail.A monolithic photoreceiver with 1.71GHz bandwidth and 49dB transimpedance gain is designed and simulated by applying a low-cost 0.6μm CMOS process and the test result is given.展开更多
Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteri...Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.展开更多
Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optica...Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector u...In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.展开更多
Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent pr...Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot （QD） lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self- organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength （〉 1.3 μm） QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.展开更多
A 12-Gbit/s low-power,wide-bandwidh CMOS(complementary metal oxide semiconductor)dual negative feedback feed-forward common gate(DNFFCG)differential trans-impedance amplifier(TIA)is presented for the veryshort-reach(V...A 12-Gbit/s low-power,wide-bandwidh CMOS(complementary metal oxide semiconductor)dual negative feedback feed-forward common gate(DNFFCG)differential trans-impedance amplifier(TIA)is presented for the veryshort-reach(VSR)optoelectronic integrated circuit(OEIC)receiver.The dominant pole of the input node is shifted up to a high frequency,and thus the bandwidth of the CMOS DNFFCG TIA is improved.Besides,two negative feedback loops are used to reduce the input impedance and further increase the bandwidth.The proposed TIA was fabricated using TSMC 0.18 jxm CMOS technology.The whole circuit has a compact chip area,the core area of which is only 0.003 6 mm2.The power consumption is 14.6 mW excluding 2-stage differential buffers.The test results indicate that the 3 dB bandwidth of 9 GHz is achieved with a 1 8 V supply voltage and its trans-impedance gain is 49.2 dBH.The measured average equivalent input noise current density is 28.1 pA H z12.Under the same process conditions,the DNFFCG has better gain bandwidth product compared with those in the published papers.展开更多
文摘A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.
基金Project supported by the National Natural Science Foundation of China(Grant No.61675041)the National Science Funds for Creative Research Groups of China(Grant No.61421002)
文摘Organic optoelectronic integrated devices（OIDs） with ultraviolet（UV） photodetectivity and different color emitting were constructed by using a thermally activated delayed fluorescence（TADF） material 4, 5-bis（carbazol-9-yl）-1, 2-dicyanobenzene（2 CzPN） as host. The OIDs doping with typical red phosphorescent dye [tris（1-phenylisoquinoline）iridium（Ⅲ）, Ir（piq）3], orange phosphorescent dye {bis[2-（4-tertbutylphenyl）benzothiazolato-N,C-（2＇）]iridium（acetylacetonate）,（tbt）2 Ir（acac）}, and blue phosphorescent dye [bis（2, 4-di-fluorophenylpyridinato）-tetrakis（1-pyrazolyl）borate iridium（Ⅲ）, FIr6] were investigated and compared. The（tbt）2 Ir（acac）-doped orange device showed better performance than those of red and blue devices, which was ascribed to more effective energy transfer. Meanwhile, at a low dopant concentration of 3 wt.%, the（tbt）2 Ir（acac）-doped OIDs showed the maximum luminance, current efficiency, power efficiency of 70786 cd/m^2, 39.55 cd/A, and 23.92 lm/W, respectively, and a decent detectivity of 1.07 × 10^11 Jones at a bias of -2 V under the UV-350 nm illumination. This work may arouse widespread interest in constructing high efficiency and luminance OIDs based on doping phosphorescent dye.
基金This work was supported in part by the National Natural Science Founda⁃tion of China under Grant No.U21A20495National Key Research and De⁃velopment Program of China under Grant No.2022YFE0112000High⁃er Education Discipline Innovation Project under Grant No.D17018.
文摘GaN-based devices have developed significantly in recent years due to their promising applications and research potential.A major goal is to monolithically integrate various GaN-based components onto a single chip to create future optoelectronic systems with low power consumption.This miniaturized integration not only enhances multifunctional performance but also reduces material,processing,and packaging costs.In this study,we present an optoelectronic on-chip system fabricated using a top-down approach on a III-nitride-on-silicon wafer.The system includes a near-ultraviolet light source,a monitor,a 180°bent waveguide,an electro-absorption modulator,and a receiver,all integrated without the need for regrowth or post-growth doping.35 Mbit/s optical data communication is demonstrated through light propagation within the system,confirming its potential for compact GaN-based optoelectronic solutions.
文摘This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.
文摘A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB.These devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of 16.2dB.The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.
文摘A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).
文摘Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
文摘Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications.One of the major goals of this study is to realize all-Si optoelectronic integrated circuit.This is due to the fact that Si-based optoelectronic technology can be compatible with Si microelectronic technology.If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution.In the article,the current developments of this exciting field are mainly reviewed in the recent years.The involved contents are the realization of various Si-based optoelectronic devices,such as light-emitting diodes,optical waveguides devices,Si photonic bandgap crystals,and Si laser,etc.Finally,the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.
基金Natural Science Foundation of Beijing Municipality(Z210005)National Natural Science Foundation of China(62205329,61925505,62235015)Young Elite Scientists Sponsorship Program by CAST(YESS20230216)。
文摘Ultra-low-noise microwave signals play a driving role in the development of modern scientific technologies such as radar,communication,and sensing.On-chip photonic integration provides an attractive approach for the implementation of ultra-low-noise microwave signal sources with attractive added advantages of being compact and lightweight,which are vitally important for real-world applications.Coupled optoelectronic oscillators(COEOs)with a hybrid structure of an optical loop and an optoelectronic loop are high-performance microwave photonic signal sources,which feature a unique advantage over conventional single-loop OEOs since they can achieve ultra-low phase noise with a relatively short cavity length.Here we report a wideband tunable ultra-lownoise integrated COEO(ICOEO),which is realized by integrating its key optoelectronic components(electrooptic modulator,photodetector,optical filter,etc.)on silicon-on-insulator(SOI).A wideband frequency tuning range from 2 GHz to 30 GHz is obtained,covering the entire S,C,X,Ku,and K bands.The phase noise is as low as−132 dBc/Hz@10 kHz,which is 19 dB better than that of the single-loop OEO with a similar cavity length.We also improved the long-term stability of the ICOEO by injection locking,and the Allan deviation of the produced microwave signal reaches 10^(−12)@1 s.The high-performance ICOEO can find a wide range of applications including modern radar,electronic warfare,and communication systems.
基金supported by the National Natural Science Foundation of China(Grant Nos.22090023,62175202,52303236,and 62275152)the Beijing Natural Science Foundation(Grant No.2252063)+1 种基金the Taishan Scholar Program of Shandong Province(Grant No.tsqn202306255)the National Key Research and Development Program of China(Grant No.2024YFB3612500).
文摘Organic micro-nanophotonics is an emerging interdisciplinary field that integrates photonics,nanoscience,and materials chemistry to explore light-matter interactions at the nanoscale.Compared with inorganic counterparts,organic materials offer distinct advantages such as high photoluminescence efficiency,tunable optical properties,and facile processability,which enable flexible and multifunctional nanophotonic applications.This review summarizes recent advances in organic nanophotonic materials and their applications in integrated photonic devices.First,we highlight the unique photophysical characteristics of typical organic materials—including small molecules,conjugated polymers,and hybrid systems—emphasizing their structural versatility and excited-state dynamics.Next,we discuss representative organic photonic devices such as lasers,photodetectors,OLEDs,photovoltaics,modulators,and optical coding systems,focusing on how organic components enhance device functionality.We further review recent progress in the design and fabrication of integrated organic photonic platforms,including patterning techniques,photonic integrated circuits(PICs),and nonlinear photonic systems.Finally,we outline the remaining challenges in the field and provide perspectives on future research directions,particularly in the rational molecular design and structure-property relationship of organic materials.By offering a comprehensive overview,this review aims to promote innovation in the development of tunable,high-performance nanophotonic devices based on organic materials.
文摘The vertical cavity surface emitting laser (VCSEL) arrays and VCSEL-based optical transmission modules are investigated.It includes the VCSEL's spectral characteristic,modulation characteristic,high frequency characteristic,and compatibility with microelectronic circuit.The module consists of 1×16 VCSEL array and 16-channel lasers driver with 0.35μm CMOS circuit by hybrid integration.During the test process,the module operates well at more than 2GHz in -3dB frequency bandwidth.
文摘A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.
文摘We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor （MOS） capacitor configuration integrated into silicon-on-insulator （SOl）. Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
文摘A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade (RGC) transimpedance amplifier (TIA) is designed.The small signal circuit model of DPD is given and the bandwidth design method of a monolithic photoreceiver is presented.An important factor which limits the bandwidth of DPD detector and the photoreceiver is presented and analyzed in detail.A monolithic photoreceiver with 1.71GHz bandwidth and 49dB transimpedance gain is designed and simulated by applying a low-cost 0.6μm CMOS process and the test result is given.
文摘Two kinds of monolithically fabricated circuits are demonstrated in GaAs-based material systems using resonant tunneling diodes（RTD） and metal-semiconductor-metal photo detectors（MSM PD）. The electronic characteristics of these fabricated RTD devices,MSM devices,and integrated circuits are tested at room temperature. The results show that the current peak-to-valley ratio is 4,and the photocurrent at 5V is enhanced by a factor of nearly 9,from 2 to about 18μA by use of recessed electrodes. The working theory and logical functions of the circuits are validated.
基金supported by the National Basic Research Program of China(No.2011CBA00608)the National Natural Science Foundation of China(Nos.61178051,61321063,61335010,61178048,61275169)the National High Technology Research and Development Program of China(Nos.2013AA013602,2013AA031903,2013AA032204)
文摘Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金supported by the Fund of State Key Laboratory of Information Photonics and Optical Communications(No.IPOC2016ZT10)the National Natural Science Foundation of China(Nos.61574019,61674020,and 61674018)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001)the 111 Project(No.B07005)
文摘In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.
基金the Defense Advanced Research Projects Agency of the United States under Grant No.W911NF-04-1-0429
文摘Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot （QD） lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self- organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength （〉 1.3 μm） QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.
基金The National Natural Science Foundation of China(No.61306069)
文摘A 12-Gbit/s low-power,wide-bandwidh CMOS(complementary metal oxide semiconductor)dual negative feedback feed-forward common gate(DNFFCG)differential trans-impedance amplifier(TIA)is presented for the veryshort-reach(VSR)optoelectronic integrated circuit(OEIC)receiver.The dominant pole of the input node is shifted up to a high frequency,and thus the bandwidth of the CMOS DNFFCG TIA is improved.Besides,two negative feedback loops are used to reduce the input impedance and further increase the bandwidth.The proposed TIA was fabricated using TSMC 0.18 jxm CMOS technology.The whole circuit has a compact chip area,the core area of which is only 0.003 6 mm2.The power consumption is 14.6 mW excluding 2-stage differential buffers.The test results indicate that the 3 dB bandwidth of 9 GHz is achieved with a 1 8 V supply voltage and its trans-impedance gain is 49.2 dBH.The measured average equivalent input noise current density is 28.1 pA H z12.Under the same process conditions,the DNFFCG has better gain bandwidth product compared with those in the published papers.
