摘要
A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.
描述了一种基于 In P材料沿 [0 11]晶向湿法化学腐蚀形成平滑侧壁实现的 In P基多量子阱激光器和异质结双极晶体管驱动电路单片集成 .通过一个横向缓冲台面结构 ,降低了激光器阳极和晶体管集电极互连工艺的难度 ,改善了光发射单片光电集成电路的可制造性 .采用该方法制作的光发射单片直流功耗为 12 0 m W,在码长 2 2 3- 1传输速率 1.5 Gb/ s伪随机码信号调制下有清晰的眼图 ,光输出功率为 2 d
基金
国家高技术研究发展计划资助项目 (项目编号 :863-30 7-15 -3-0 4)~~
