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Repair of peripheral nerve defects by nerve transposition using small gap bio-sleeve suture with different inner diameters at both ends 被引量:1
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作者 Yu-Hui Kou You-Lai Yu +7 位作者 Ya-Jun Zhang Na Han Xiao-Feng Yin Yu-Song Yuan Fei Yu Dian-Ying Zhang Pei-Xun Zhang Bao-Guo Jiang 《Neural Regeneration Research》 SCIE CAS CSCD 2019年第4期706-712,共7页
During peripheral nerve transposition repair, if the diameter difference between transposed nerves is large or multiple distal nerves must be repaired at the same time, traditional epineurial neurorrhaphy has the prob... During peripheral nerve transposition repair, if the diameter difference between transposed nerves is large or multiple distal nerves must be repaired at the same time, traditional epineurial neurorrhaphy has the problem of high tension at the suture site, which may even lead to the failure of nerve suture. We investigated whether a small gap bio-sleeve suture with different inner diameters at both ends can be used to repair a 2-mm tibial nerve defect by proximal transposition of the common peroneal nerve in rats and compared the results with the repair seen after epineurial neurorrhaphy. Three months after surgery, neurological function, nerve regeneration, and recovery of nerve innervation muscle were assessed using the tibial nerve function index, neuroelectrophysiological testing, muscle biomechanics and wet weight measurement, osmic acid staining, and hematoxylin-eosin staining. There was no obvious inflammatory reaction and neuroma formation in the tibial nerve after repair by the small gap bio-sleeve suture with different inner diameters at both ends. The conduction velocity, muscle strength, wet muscle weight, cross-sectional area of muscle fibers, and the number of new myelinated nerve fibers in the biosleeve suture group were similar to those in the epineurial neurorrhaphy group. Our findings indicate that small gap bio-sleeve suture with different inner diameters at both ends can achieve surgical suture between nerves of different diameters and promote regeneration and functional recovery of injured peripheral nerves. 展开更多
关键词 NERVE REGENERATION bio-sleeve small gap SLEEVE SUTURE NERVE TRANSPOSITION NERVE defect NERVE conduit NERVE reinnervation peripheral NERVE neural REGENERATION
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Study on band gaps and defect bands in tunable phononic crystal plates with elastic foundations
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作者 HONG Jun GAO Xingyu +1 位作者 LI Ke WANG Shaopeng 《Journal of Southeast University(English Edition)》 2025年第2期164-170,共7页
To analyze the band gap characteristics of phononic crystals,a two-dimensional phononic crystal plate model with an elastic foundation was first established.The plane wave expansion method was used to compute the disp... To analyze the band gap characteristics of phononic crystals,a two-dimensional phononic crystal plate model with an elastic foundation was first established.The plane wave expansion method was used to compute the dispersion curves of this phononic crystal model,and the results were compared with those from the finite element method to verify their accuracy.Subsequently,a parameter study explored the effects of the elastic foundation coeffi-cient and coverage ratio on the band gap.The results indicate that as the coverage ratio of the elastic foundation increases,the band gap significantly expands,reaching its maximum value at 100%coverage.Additionally,as the elastic foundation stiffness increases,the band gap gradually widens and converges toward fixed boundary conditions.The study also investigated the band gap of phononic crystal plates with defects,finding that the vibrational energy concentrates at the defect unit cell.Furthermore,the defect band frequency can be effectively modulated by adjusting the coefficient of the elastic foundation,providing a theoretical basis for achieving efficient energy conversion. 展开更多
关键词 phononic crystals elastic foundation band gap plane wave expansion method defect band
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Defects in Graphene:Generation,Healing,and Their Effects on the Properties of Graphene:A Review 被引量:14
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作者 Lili Liu Miaoqing Qing +1 位作者 Yibo Wang Shimou Chen 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2015年第6期599-606,共8页
Graphene has attracted immense investigation since its discovery.Lattice imperfections are introduced into graphene unavoidably during graphene growth or processing.These structural defects are known to significantly ... Graphene has attracted immense investigation since its discovery.Lattice imperfections are introduced into graphene unavoidably during graphene growth or processing.These structural defects are known to significantly affect electronic and chemical properties of graphene.A comprehensive understanding of graphene defect is thus of critical importance.Here we review the major progresses made in defectrelated engineering of graphene.Firstly,we give a brief introduction on the types of defects in graphene.Secondly,the generation and healing of the graphene defects are summarized.Then,the effects of defects on the chemical,electronic,magnetic,and mechanical properties of graphene are discussed.Finally,we address the associated challenges and prospects on the future study of defects in graphene and other nanocarbon materials. 展开更多
关键词 GRAPHENE VACANCY defect healing Band gap modulatio
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Mono-Vacancy and B-Doped Defects in Carbon Heterojunction Nanodevices 被引量:2
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作者 Ahlam A. El-Barbary Mohamed A. Kamel +2 位作者 Khaled M. Eid Hayam O. Taha Mohamed M. Hassan 《Graphene》 2015年第4期84-90,共7页
We present a detailed theoretical study of the behavior of mono-vacancy and B-doped defects in carbon heterojunction nanodevices. We have introduced a complete set of formation energy and surface reactivity calculatio... We present a detailed theoretical study of the behavior of mono-vacancy and B-doped defects in carbon heterojunction nanodevices. We have introduced a complete set of formation energy and surface reactivity calculations, considering a range of different diameters and chiralities of combined carbon nanotubes. We have investigated three distinct combinations of carbon heterojunctions using density functional theory (DFT) and applying B3LYP/3-21g: armchair-armchair herteojunctions, zigzag-zigzag heterojunctions, and zigzag-armchair heterojunctions. We have shown for first time a detailed study of formation energy of mono-vacancy and B-doped defects of carbon heterojunction nanodevices. Our calculations show that the highest surface reactivity is found for the B-doped zigzag-armchair heterojunctions and it is easier to remove the carbon atom from the network of heterojunction armchair-armchair CNTs than the heterojunction zigzag-armchair and zigzag-zigzag CNTs. 展开更多
关键词 Band gaps CARBON Heterojunctions DFT Mono-Vacancy defects Boron Doping
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International Standardization of Blockchain and Distributed Ledger Technology:Overlaps,Gaps and Challenges 被引量:1
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作者 Xiangjuan Jia Jing Xu +3 位作者 Mengwei Han Qing Zhang Lu Zhang Xiaofeng Chen 《Computer Modeling in Engineering & Sciences》 SCIE EI 2023年第11期1491-1523,共33页
As one of the most concerned digital technologies in recent years,blockchain and distributed ledger technology are an important driving force for a new round of technological development.It is currently in the process... As one of the most concerned digital technologies in recent years,blockchain and distributed ledger technology are an important driving force for a new round of technological development.It is currently in the process of accelerating its evolution and maturity,and has gradually integrated with other digital technologies.It has been applied in many industries,providing decentralized solutions for various industries,realizing innovative storage models,and building a new trust system.As blockchain technology is officially incorporated into China’s new information infrastructure category,the application fields of blockchain have expanded rapidly,gradually extending from the financial field and government affairs to other fields in the real economy.At the same time,with the continuous development of the globalized economy,blockchain technology will also have a profound impact on international technological and economic development.Therefore,for the healthy and orderly development and real implementation of the blockchain industry,standardize the application of blockchain,effectively break through the cognitive and technical barriers between different countries,industries and systems on a global scale,prevent application risks,the development of the global blockchain industry needs standardization basis,which is particularly important and urgent.A sound standard system is an important key to the successful development of technology,and formulating the right standard at the right time for technology development helps ensure the ease of use and interoperability of the technology.From the perspective of international standardization,this article first introduces the general situation of ISO,ITU-T,IEEE,W3C and other international standardization organizations,and sorts out the status quo of the blockchain standardization working groups of mainstream international standardization organizations.All blockchain-related standards under development have been analyzed for the characteristics of international blockchain technology standards and industry application standards.Through data analysis,the overlaps,differences and conflicts in the field of international blockchain standard formulation are sorted out,and suggestions for blockchain standardization work in the application and development of blockchain technology standardization by international organizations and industries are put forward.The plans and layouts of future international standards are summarized to help the development of the international standardization of blockchain. 展开更多
关键词 ISO ITU-T IEEE blockchain distributed ledger technology international standard standardization status overlapS gapS CHALLENGES
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Excitation of defect modes from the extended photonic band-gap structures of 1D photonic lattices 被引量:2
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作者 周可雅 郭忠义 +1 位作者 Muhammad Ashfaq Ahmad 刘树田 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第1期284-288,共5页
This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes (DMs) can be regarded as Bl... This paper stuides numerically the model equation in a one dimensional defective photonic lattice by modifying the potential function to a periodic function. It is found that defect modes (DMs) can be regarded as Bloch modes which are excited from the extended photonie band-gap structure at Bloch wave-numbers with kx = 0. The DMs for both positive and negative defects are considered in this method. 展开更多
关键词 optical-induced photonic lattices photonic band-gaps defect modes
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Influence of defect states on band gaps in the two-dimensional phononic crystal of 4340 steel in an epoxy
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作者 孔肖燕 岳蕾蕾 +1 位作者 陈雨 刘应开 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第9期400-403,共4页
The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. ... The band structures of a new two-dimensional triangle-shaped array geometry of 4340 steel cylinders of square cross section in an epoxy resin were studied by the plane-wave expansion and supercell calculation method. The band gaps of this type of phononic crystals with different defects were calculated such as defect-free, 60° crystal linear defect states, 120° crystal linear defect states, and 180° crystal linear defect states. It was found that the band gap will emerge in different linear defects of the phononic crystals and the bandwidth of linear defect states is larger than that of the free-defect crystal by about 2.14 times within the filling fraction F = 0.1-0.85. In addition, the influence of the filling fraction on the relative width of the minimum band gap is discussed. 展开更多
关键词 defect state band width number of band gap
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Surface defect gap solitons in two-dimensional optical lattices
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作者 孟云吉 刘友文 唐宇煌 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第7期314-319,共6页
We investigate the existence and stability of surface defect gap solitons at an interface between a defect in a two-dimensional optical lattice and a uniform saturable Kerr nonlinear medium. The surface defect embedde... We investigate the existence and stability of surface defect gap solitons at an interface between a defect in a two-dimensional optical lattice and a uniform saturable Kerr nonlinear medium. The surface defect embedded in the two-dimensional optical lattice gives rise to some unique properties. It is interestingly found that for the negative defect, stable surface defect gap solitons can exist both in the semi-infinite gap and in the first gap. The deeper the negative defect, the narrower the stable region in the semi-infinite gap will be. For a positive defect, the surface defect gap solitons exist only in the semi-infinite gap and the stable region localizes in a low power region. 展开更多
关键词 surface defect gap soliton optical lattice saturable Kerr nonlinear media
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Surface defect gap solitons in one-dimensional dual-frequency lattices
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作者 朱伟玲 罗莉 +1 位作者 何影记 汪河洲 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第10期4319-4325,共7页
We study the surface defect gap solitons in an interface between a defect of one-dimensional dual-frequency lattices and the uniform media. Some unique properties are revealed that such lattices can broaden the region... We study the surface defect gap solitons in an interface between a defect of one-dimensional dual-frequency lattices and the uniform media. Some unique properties are revealed that such lattices can broaden the region of semi-finite gap, and the semi-finite gap exists not only in the positive and zero defects but also in the negative defect; unlike in the regular lattices, the semi-finite gap exists in the positive and zero defects but does not exist in the negative defect. In particular, stable solitons exist almost in the whole semi-finite gap for the positive and zero defects. These properties are different from other lattices with defects. In addition, it is found that the existence of surface dual-frequency lattice solitons does not need a threshold power. 展开更多
关键词 dual-frequency lattices surface defect gap solitons
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Dynamic Control of Defective Gap Mode Through Defect Location
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作者 苌磊 李应红 +3 位作者 吴云 张辉洁 王卫民 宋慧敏 《Plasma Science and Technology》 SCIE EI CAS CSCD 2016年第1期1-5,共5页
A one dimensional model is developed for defective gap mode(DGM)with two types of boundary conditions:conducting mesh and conducting sleeve.For a periodically modulated system without defect,the normalized width of... A one dimensional model is developed for defective gap mode(DGM)with two types of boundary conditions:conducting mesh and conducting sleeve.For a periodically modulated system without defect,the normalized width of spectral gaps equals to the modulation factor,which is consistent with previous studies.For a periodic system with local defects introduced by the boundary conditions,it shows that the conducting-mesh-induced DGM is always well confined by spectral gaps while the conducting-sleeve-induced DGM is not.The defect location can be a useful tool to dynamically control the frequency and spatial periodicity of DGM inside spectral gaps.This controllability can be potentially applied to the interaction between gap eigenmodes and energetic particles in fusion plasmas,and optical microcavities and waveguides in photonic crystals. 展开更多
关键词 defective gap mode boundary condition dynamic control analytical model
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Influence of Defect Density, Band Gap Discontinuity and Electron Mobility on the Performance of Perovskite Solar Cells
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作者 Issiaka Sankara Soumaïla Ouédraogo +4 位作者 Daouda Oubda Boureima Traoré Marcel Bawindsom Kébré Adama Zongo François Zougmoré 《Advances in Materials Physics and Chemistry》 2023年第8期151-160,共10页
In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the... In this manuscript, we used the SCAPS-1D software to perform numerical simulations on a perovskite solar cell. These simulations were used to study the influence of certain parameters on the electrical behavior of the cell. We have shown in this study that electron mobility is strongly influenced by the thickness of the absorber, since electron velocity is reduced by thickness. The influence of the defect density shows that above 10<sup>16</sup> cm<sup>-3</sup> all the electrical parameters are affected by the defects. The band discontinuity at the interface generally plays a crucial role in the charge transport phenomenon. The importance of this study is to enable the development of good quality perovskite solar cells, while taking into account the parameters that limit solar cell performance. 展开更多
关键词 defect Density Electron Mobility Band gap PEROVSKITE SCAPS-1D Software
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Hydrodynamic performance of bionic streamlined remotely operated vehicle based on CFD and overlapping mesh technology
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作者 Bin Guan Junjie Li 《Theoretical & Applied Mechanics Letters》 2025年第3期246-256,共11页
To meet the intelligent detection needs of underwater defects in large hydropower stations,the hydrodynamic performance of a bionic streamlined remotely operated vehicle containing a thruster protective net structure ... To meet the intelligent detection needs of underwater defects in large hydropower stations,the hydrodynamic performance of a bionic streamlined remotely operated vehicle containing a thruster protective net structure is numerically simulated via computational fluid dynamics and overlapping mesh technology.The results show that the entity model generates greater hydrodynamic force during steady motion,whereas the square net model experiences greater force and moment during unsteady motion.The lateral and vertical force coefficients of the entity model are 4.32 and 3.13 times greater than those of the square net model in the oblique towing test simulation.The square net model also offers better static and dynamic stability,with a 24.5%increase in dynamic stability,achieving the highest lift-to-drag ratio at attack angles of 6°∼8°.This research provides valuable insights for designing and controlling underwater defect detection vehicles for large hydropower stations. 展开更多
关键词 Underwater defect detection Remotely operated vehicle Hydrodynamic performance Computational fluid dynamics overlapping mesh technology
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纳米GaP材料Ga填隙缺陷的EPR实验观察 被引量:2
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作者 张兆春 邹陆军 崔得良 《波谱学杂志》 CAS CSCD 北大核心 2003年第4期335-342,共8页
利用电子顺磁共振 (EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究 ,结果表明 :由EPR信息的 g因子值 ( 2 .0 0 2 7± 0 .0 0 0 4 )可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷 ;纳米GaP粉体EPR信号超精细结构消失 ,以及... 利用电子顺磁共振 (EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究 ,结果表明 :由EPR信息的 g因子值 ( 2 .0 0 2 7± 0 .0 0 0 4 )可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷 ;纳米GaP粉体EPR信号超精细结构消失 ,以及谱线线宽 (ΔHPP)变窄等实验现象 ,可能是由纳米材料界面的无序性 ,以及缺陷原子和界面原子之间的电子交换造成的 ;在较低的测试温度范围内 ,升高温度引起纳米GaP材料发生晶界结构弛豫 ;当测试温度由1 0 0K升高至 42 3K时 。 展开更多
关键词 电子顺磁共振技术 纳米材料 磷化镓 点缺陷 谱线线宽 超精细结构 晶界结构弛豫 半导体材料
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重叠感受野间隙耦合的方向差分运动感知神经网络
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作者 陶星宇 胡滨 《计算机科学与探索》 北大核心 2026年第1期122-142,共21页
认知神经科学研究发现,脊椎动物视网膜存在方向差分神经元(OMS-DS),具有局部-全局方向差异偏好的视觉神经响应特性,有助于动态视觉场景中区分前景局部和背景全局之间的运动差异,但目前鲜有该神经特性在视觉运动感知问题研究的计算模型... 认知神经科学研究发现,脊椎动物视网膜存在方向差分神经元(OMS-DS),具有局部-全局方向差异偏好的视觉神经响应特性,有助于动态视觉场景中区分前景局部和背景全局之间的运动差异,但目前鲜有该神经特性在视觉运动感知问题研究的计算模型报道。针对该问题,基于蝾螈视网膜差分运动响应特性,提出一种方向差分运动感知神经网络(dirDMPNN)。所提出的神经网络包含突触前和突触后两部分。突触前网络感知运动变化在视野域中引发的低阶视觉线索;突触后网络基于重叠感受野间隙连接耦合机制以对前景、背景方向差分实现响应输出。系统性实验研究表明,dirDMPNN能感知视野域中平移自运动的前景-背景方向运动线索,并对其差分运动模式输出强烈神经尖峰响应。该工作涉及生物视脑神经机制启发的视觉信息加工处理,可为自运动视觉场景,诸如空间飞行器、无人驾驶、机器人自主导航等自治环境下的运动感知与识别、目标检测与跟踪问题的研究与解决提供新思想、新方法。 展开更多
关键词 方向差分感知 间隙连接耦合 重叠感受野 方向差分神经元 视网膜神经 视觉运动感知 自运动视觉场景
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GaP的缺陷随温度变化的PAT研究
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作者 张福甲 张苗 张旭 《发光学报》 EI CAS CSCD 北大核心 1996年第2期143-147,共5页
我们对LEC法制成的掺S的GaP单晶,从室温至1000℃,每隔50℃恒温30分钟,在Ar气保护下进行热处理.用正电子湮没技术(PAT)对样品中的缺陷进行了分析研究.结果指出,随着热处理温度的升高,GaP中的点缺陷组态... 我们对LEC法制成的掺S的GaP单晶,从室温至1000℃,每隔50℃恒温30分钟,在Ar气保护下进行热处理.用正电子湮没技术(PAT)对样品中的缺陷进行了分析研究.结果指出,随着热处理温度的升高,GaP中的点缺陷组态发生变化.测试结果表明,正电子湮没寿命可分解为两个寿命.其中捕获态寿命τ2随热处理温度的升高,由310ps变为330ps;进而在高温下变为280ps.相应地捕获强度I2随温度而发生变化,它反映出GaP单晶中的空位浓度也在随温度发生变化. 展开更多
关键词 缺陷 正电子寿命 磷化镓
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GaP中反位缺陷的电子结构
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作者 申三国 《郑州大学学报(自然科学版)》 CAS 1994年第3期52-55,共4页
本文利用紧束缚的格林函数方法,确定了Gap中P_(Ga)反位缺陷的波函数为深能级E的函数。理论给出反位原子上的超精细相互作用常数,同实验符合得很好,定性说明了GaP中P_(Ga)反位缺陷的次近邻原子有向外驰豫的趋势。
关键词 半导体 电子结构 磷化镓 反位缺陷
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Inhibiting the bipolar effect via band gap engineering to improve the thermoelectric performance in n-type Bi_(2-x)Sb_(x)Te_(3)for solid-state refrigeration 被引量:4
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作者 Dongliang Su Jiahui Cheng +6 位作者 Shan Li Shengnan Zhang Tu Lyu Chaohua Zhang Junqin Li Fusheng Liu Lipeng Hu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2023年第7期50-58,共9页
To date,the benchmark Bi_(2)Te_(3)-based alloys are still the only commercial material system used for ther-moelectric solid-state refrigeration.Nonetheless,the conspicuous performance imbalance between the p-type Bi_... To date,the benchmark Bi_(2)Te_(3)-based alloys are still the only commercial material system used for ther-moelectric solid-state refrigeration.Nonetheless,the conspicuous performance imbalance between the p-type Bi_(2-x)Sb_(x)Te_(3)and n-type Bi_(2)Te_(3-x)Se_(x) legs has become a major obstacle for the improvement of cooling devices to achieve higher efficiency.In our previous study,novel n-type Bi_(2-x)Sb_(x)Te_(3)alloy has been pro-posed via manipulating donor-like effect as an alternative to mainstream n-type Bi_(2)Te_(3-x)Se_(x).However,the narrow bandgap of Bi_(2-x)Sb_(x)Te_(3)provoked severe bipolar effect that constrained the further improvement of zT near room temperature.Herein,we have implemented band gap engineering in n-type Bi_(1.5)Sb_(0.5)Te_(3)by employing isovalent Se substitution to inhibit the undesired intrinsic excitation and achieve the dis-tinguished room-temperature zT.First,the preferential occupancy of Se at Te^(2)site appropriately enlarges the band gap,thereby concurrently improving the Seebeck coefficient and depressing the bipolar thermal conductivity.In addition,the Se alloying mildly suppresses the compensation mechanism and essentially preserves the already optimized carrier concentration,which maintains the peak zT near room tempera-ture.Moreover,the large strain field and mass fluctuation generated by Se alloying leads to the remark-able reduction of lattice thermal conductivity.Accordingly,the zT value of Bi_(1.5)Sb_(0.5)Te_(2.8)Se_(0.2)reaches 1.0 at 300 K and peaks 1.1 at 360 K,which surpasses that of most well-known room-temperature n-type thermoelectric materials.These results pave the way for n-type Bi_(2-x)Sb_(x)Te_(3)alloys to become a new and promising top candidate for large-scale solid-state cooling applications. 展开更多
关键词 Thermoelectric Bi_(2)Te_(3) Band gap Bipolar effect Point defects
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One-dimensional structure made of periodic slabs of SiO2/InSb offering tunable wide band gap at terahertz frequency range 被引量:1
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作者 Sepehr Razi Fatemeh Ghasemi 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第12期170-179,共10页
Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By i... Optical features of a semiconductor–dielectric photonic crystal are studied theoretically. Alternating layers of micrometer sized SiO2/In Sb slabs are considered as building blocks of the proposed ideal crystal. By inserting additional layers and disrupting the regularity, two more defective crystals are also proposed. Photonic band structure of the ideal crystal and its dependence on the structural parameters are explored at the first step. Transmittance of the defective crystals and its changes with the thicknesses of the layers are studied. After extracting the optimum values for the thicknesses of the unit cells of the crystals, the optical response of the proposed structures at different temperatures and incident angles are investigated. Changes of the defect layers’ induced mode(s) are discussed by taking into consideration of the temperature dependence of the In Sb layer permittivity. The results clearly reflect the high potential of the proposed crystals to be used at high temperature terahertz technology as a promising alternative to their electronic counterparts. 展开更多
关键词 photonic band gap photonic crystal semiconductor layer defect mode
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Design of Novel Compact Electromagnetic Bandgap Structures with Enhanced Bandwidth 被引量:1
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作者 Ping Jiang Kang Xie 《Journal of Electronic Science and Technology》 CAS 2010年第3期262-266,共5页
Two kinds of compact electromagnetic band gap (EBG) structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Becaus... Two kinds of compact electromagnetic band gap (EBG) structures are designed. A two layer compact EBG structure configured with cross spiral shape line inductors and interdigital capacitors is first presented. Because of its significantly enlarged equivalent inductor and capacitance, the period of the lattice is approximately 4.5% of the free space wavelength. By insetting several narrow slits in the ground plane, the bandwidth of the main bandgap is enhanced by nearly 19%. Further effort has been made for designing a three layer compact EBG structure. Simulation results show that its period is reduced by about 26% compared to that of proposed two layer EBG structure, and the bandwidth of the main bandgap is about 3 times as that of the proposed two layer EBG structure. The detailed designs including a two layer compact 3×7 EBG array with and without defect ground plane and the three layer EBG array are given and simulation results are presented. 展开更多
关键词 defect ground electromagnetic band gap high surface surface wave. structure impedance
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Extreme narrow photonic passbands generated from defective two-segment-connected triangular waveguide networks
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作者 汤振兴 杨湘波 +1 位作者 卢剑 刘承宜 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第4期292-299,共8页
In this paper, we investigate the optical transmission properties of perfect and defective two-segment-connected tri- angular waveguide networks (2SCTWNs) and find that after introducing defects in networks, many gr... In this paper, we investigate the optical transmission properties of perfect and defective two-segment-connected tri- angular waveguide networks (2SCTWNs) and find that after introducing defects in networks, many groups of transparent extreme narrow photonic passbands (ENPPs) will be created in the middle of the transmission spectra, the number for each group and the group number of ENPPs can he adjusted by the matching ratios of waveguide length (MRWLs), the number of defects, and the number of unit cells of 2SCTWNs. The influences of MRWL, number of defects, and number of unit cells on the number, width, and position of these ENPPs are researched and a series of quantitative rules and prop- erties are obtained. It may be useful for the designing of high-sensitive optical switches, wavelength division multiplexers, extreme-narrowband filters, and other correlative waveguide network devices. 展开更多
关键词 photonic band gap defective waveguide network narrow passband
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