摘要
利用电子顺磁共振 (EPR)技术对纳米GaP粉体材料的本征点缺陷进行了研究 ,结果表明 :由EPR信息的 g因子值 ( 2 .0 0 2 7± 0 .0 0 0 4 )可以确定纳米GaP粉体材料存在Ga自填隙(Gai)本征缺陷 ;纳米GaP粉体EPR信号超精细结构消失 ,以及谱线线宽 (ΔHPP)变窄等实验现象 ,可能是由纳米材料界面的无序性 ,以及缺陷原子和界面原子之间的电子交换造成的 ;在较低的测试温度范围内 ,升高温度引起纳米GaP材料发生晶界结构弛豫 ;当测试温度由1 0 0K升高至 42 3K时 。
The intrinsic point defects of GaP nanocrystals were investigated by electron paramagnetic resonance (EPR). The g value of GaP nanocrystals EPR signal observed was 2.0027 ±0.0004, suggesting the existence of Ga self interstitial defect. Collapse of hyperfine splitting and narrowing of peak to peak linewidth (Δ H PP ) were observed, probably resulting from interface disorders and rapid electron exchange between the defect atoms and the interface atoms. In lower measuring temperature range, increase of temperature led to occurrence of grain boundary relaxation of GaP nanocrystals. The value of both Δ H PP and concentration of dangling bound decrease as the measuring temperature increased from 100 K to 423 K.
出处
《波谱学杂志》
CAS
CSCD
北大核心
2003年第4期335-342,共8页
Chinese Journal of Magnetic Resonance
基金
上海市高等学校科学技术发展基金资助项目 ( 0 1A2 3 )
