1 064 nm, 532 nm frequency-doubled antireflection （AR） coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium...1 064 nm, 532 nm frequency-doubled antireflection （AR） coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium triborate （LiB3O5 or LBO） crystals. The residual reflectance of the sample is 0.07% and 0.11% at 1 064 nm and 532 nm, respectively. The adhesion and the laser-induced damage threshold （LIDT） of the sample are greater than 200 mN and 18.6 J/cm2. The strengthening mechanism of adhesion and LIDT of the buffer layer of SiO2 were discussed by considering full plastic indentation and shear theory, and spallation of a plated film induced by thermal shock stress, respectively.展开更多
Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate （LiB3O5 or LBO） crystals using the electron beam evaporation method. Comparing with th...Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate （LiB3O5 or LBO） crystals using the electron beam evaporation method. Comparing with the sample without buffer layer, it is found that the adhesion of the sample with buffer layer of SiO2 between coating and LBO substrate is improved significantly from 137.4 mN to greater than 200 mN. And the laser-induced damage threshold is increased by 20% from 15.1 J/cm^2 to 18.6 J/cm^2. The strengthening mechanism of adhesion of the buffer layer of SiO2 is discussed by considering full plastic indentation and shear theory.展开更多
This paper describes the preparation and properties of TiN_x-SiO_2 double-layered antireflective(AR) coatings that were applied with print process. The coating material was analyzed and TiN_x was used instead of TiO_2...This paper describes the preparation and properties of TiN_x-SiO_2 double-layered antireflective(AR) coatings that were applied with print process. The coating material was analyzed and TiN_x was used instead of TiO_2 as high refractive material. The influence of solution concentration on AR property was studied. The testing result shows that the coatings using print process are featured with excellent mechanical property and the AR property is comparable to American Southwall AR product. It is expected that the study would promote the industrialization progress in AR coatings.展开更多
Stroke is one of the leading causes of death and disability worldwide.However,information on stroke-related tongue coating microbiome(TCM)is limited,and whether TCM modulation could benefit for stroke prevention and r...Stroke is one of the leading causes of death and disability worldwide.However,information on stroke-related tongue coating microbiome(TCM)is limited,and whether TCM modulation could benefit for stroke prevention and rehabilitation is unknown.Here,TCM from stroke patients(SP)was characterized using molecular techniques.The occurrence of stroke resulted in TCM dysbiosis with significantly reduced species richness and diversity.The abundance of Prevotella,Leptotrichia,Actinomyces,Alloprevotella,Haemophilus,and TM7_[G-1]were greatly reduced,but common infection Streptococcus and Pseudomonas were remarkably increased.Furthermore,an antioxidative probiotic Lactiplantibacillus plantarum AR113 was used for TCM intervention in stroke rats with cerebral ischemia/reperfusion(I/R).AR113 partly restored I/R induced change of TCM and gut microbiota with significantly improved neurological deficit,relieved histopathologic change,increased activities of antioxidant enzymes,and decreased contents of oxidative stress biomarkers.Moreover,the gene expression of antioxidant-related proteins and apoptosis-related factors heme oxygenase-1(HO-1),superoxide dismutase(SOD),glutathione peroxidase(GSH-Px),nuclear factor erythroid 2-related factor 2(Nrf2),NAD(P)H:quinone oxidoreductase-1(NQO-1),and Bcl-2 was significantly increased,but cytochrome C,cleaved caspase-3,and Bax were markedly decreased in the brain by AR113 treatment.The results suggested that AR113 could ameliorate cerebral I/R injury through antioxidation and anti-apoptosis pathways,and AR113 intervention of TCM may have the application potential for stroke prevention and control.展开更多
As the antireflective coating prepared by sol-gel method had poor environmental stability, sol-modified method was used to improve its performance. The alkaline silica sol was prepared in ethanol solvent by using tetr...As the antireflective coating prepared by sol-gel method had poor environmental stability, sol-modified method was used to improve its performance. The alkaline silica sol was prepared in ethanol solvent by using tetraethyl orthosilicate (TEOS) as precursors and aqueous ammonia as catalyst (content ~ 28%). Polyethylene glycol (PEG200) was used to modify the silica sol and the antireflective (AR) coating was prepared by dip-coating from the modified sol. The transmittance, composition, refractive index, and hydrophobicity of AR coating were discussed by combining the spectrophotometer, FTIR, Coating Wizard 32 coating design software, optical microscopy imaging system and JC2000A static droplet contact angle measurement software. Finally, the environmental stability of the AR coating was tested. The results showed that AR coating transmittance decreased by less than 0.1% after UV light for 20 hours and its transmittance decreased by about 0.57% in the humid environment for 2 months. Resistance to environmental stability has been improved.展开更多
In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.展开更多
基金Funded by the Doctorial Start-up Fund of the Department of Science and Technology of Liaoning Province (20081030)
文摘1 064 nm, 532 nm frequency-doubled antireflection （AR） coatings with buffer layer of SiO2 between the coating and the substrate were fabricated by the electron beam evaporation technology on the substrate of lithium triborate （LiB3O5 or LBO） crystals. The residual reflectance of the sample is 0.07% and 0.11% at 1 064 nm and 532 nm, respectively. The adhesion and the laser-induced damage threshold （LIDT） of the sample are greater than 200 mN and 18.6 J/cm2. The strengthening mechanism of adhesion and LIDT of the buffer layer of SiO2 were discussed by considering full plastic indentation and shear theory, and spallation of a plated film induced by thermal shock stress, respectively.
基金Fundeded by the Doctorial Start-up Fund of the Department of Science and Technology of Liaoning Province(20081030)S&T Plan Project of the Educational Department of Liaoning Province(2008224)
文摘Frequency-doubled antireflection coatings simultaneously effective at 1064 nm and 532 nm were deposited on the lithium triborate （LiB3O5 or LBO） crystals using the electron beam evaporation method. Comparing with the sample without buffer layer, it is found that the adhesion of the sample with buffer layer of SiO2 between coating and LBO substrate is improved significantly from 137.4 mN to greater than 200 mN. And the laser-induced damage threshold is increased by 20% from 15.1 J/cm^2 to 18.6 J/cm^2. The strengthening mechanism of adhesion of the buffer layer of SiO2 is discussed by considering full plastic indentation and shear theory.
文摘This paper describes the preparation and properties of TiN_x-SiO_2 double-layered antireflective(AR) coatings that were applied with print process. The coating material was analyzed and TiN_x was used instead of TiO_2 as high refractive material. The influence of solution concentration on AR property was studied. The testing result shows that the coatings using print process are featured with excellent mechanical property and the AR property is comparable to American Southwall AR product. It is expected that the study would promote the industrialization progress in AR coatings.
基金supported by National Science Fund for Distinguished Young Scholars(grant No.32025029)Shanghai Education Committee Scientific Research Innovation Project(grant No.2101070007800120)+1 种基金Clinical research project in health industry of Shanghai Municipal Health Commission(202240379)the Development Fund for Shanghai Talents(grant No.2021077).
文摘Stroke is one of the leading causes of death and disability worldwide.However,information on stroke-related tongue coating microbiome(TCM)is limited,and whether TCM modulation could benefit for stroke prevention and rehabilitation is unknown.Here,TCM from stroke patients(SP)was characterized using molecular techniques.The occurrence of stroke resulted in TCM dysbiosis with significantly reduced species richness and diversity.The abundance of Prevotella,Leptotrichia,Actinomyces,Alloprevotella,Haemophilus,and TM7_[G-1]were greatly reduced,but common infection Streptococcus and Pseudomonas were remarkably increased.Furthermore,an antioxidative probiotic Lactiplantibacillus plantarum AR113 was used for TCM intervention in stroke rats with cerebral ischemia/reperfusion(I/R).AR113 partly restored I/R induced change of TCM and gut microbiota with significantly improved neurological deficit,relieved histopathologic change,increased activities of antioxidant enzymes,and decreased contents of oxidative stress biomarkers.Moreover,the gene expression of antioxidant-related proteins and apoptosis-related factors heme oxygenase-1(HO-1),superoxide dismutase(SOD),glutathione peroxidase(GSH-Px),nuclear factor erythroid 2-related factor 2(Nrf2),NAD(P)H:quinone oxidoreductase-1(NQO-1),and Bcl-2 was significantly increased,but cytochrome C,cleaved caspase-3,and Bax were markedly decreased in the brain by AR113 treatment.The results suggested that AR113 could ameliorate cerebral I/R injury through antioxidation and anti-apoptosis pathways,and AR113 intervention of TCM may have the application potential for stroke prevention and control.
文摘As the antireflective coating prepared by sol-gel method had poor environmental stability, sol-modified method was used to improve its performance. The alkaline silica sol was prepared in ethanol solvent by using tetraethyl orthosilicate (TEOS) as precursors and aqueous ammonia as catalyst (content ~ 28%). Polyethylene glycol (PEG200) was used to modify the silica sol and the antireflective (AR) coating was prepared by dip-coating from the modified sol. The transmittance, composition, refractive index, and hydrophobicity of AR coating were discussed by combining the spectrophotometer, FTIR, Coating Wizard 32 coating design software, optical microscopy imaging system and JC2000A static droplet contact angle measurement software. Finally, the environmental stability of the AR coating was tested. The results showed that AR coating transmittance decreased by less than 0.1% after UV light for 20 hours and its transmittance decreased by about 0.57% in the humid environment for 2 months. Resistance to environmental stability has been improved.
文摘In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.
