Local strong seismic activity shows the potential to closely follow a renewal process,which is inconsistent with the overall seismic activity that aligns with the Poisson process.Given that existing methods for synthe...Local strong seismic activity shows the potential to closely follow a renewal process,which is inconsistent with the overall seismic activity that aligns with the Poisson process.Given that existing methods for synthesizing stochastic seismic event sets cannot control local seismic activity,a method based on Monte Carlo simulations has been developed for synthesizing random seismic event sets where local strong earthquakes satisfy the renewal process.This method can synthesize seismic activities in a statistical area where the overall activity conforms to the Poisson process and the major seismic activities in local potential sources or faults follow the renewal process.This paper presents long-and short-scale approaches.The long-scale earthquake catalogs are suitable for reflecting the sequential characteristics of seismic activities.Meanwhile,the short-scale catalogs focus on the impacts of specific earthquake events within a group for a detailed understanding of hazards under certain conditions,making them suitable for studies on specific earthquake sequences and geological areas or situations requiring high temporal resolution.In the applications of shortscale sequences,we find that the equivalent occurrence rate method may overestimate the seismic hazard.This synthesis method for earthquake catalogs can simulate realistic seismic activities,thereby enhancing the accuracy of hazard analysis results and is suitable for seismic hazard analysis and earthquake insurance rate setting.展开更多
In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environme...In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulations, this paper presents a new kind of SEUR triggered by the charge collection of the Off-PMOS and the delayed charge collection of the On-NMOS in commercial 40-nm 6 T SRAM cells. The simulation results show that the proposed SEUR can not occur at normal incidence,but can present easily at angular incidence. It is also found that the width of SET induced by this SEUR remains the same after linear energy transfer(LET) increases to a certain value. In addition, through analyzing the effect of the spacing, the adjacent transistors, the drain area, and some other dependent parameters on this new kind of SEUR, some methods are proposed to strengthen the recovery ability of SRAM cells.展开更多
In order to study whether the random events set can be used in Rudongbank of Nantong or not, we use ADCIRC model to stimulate the storm surge affectingRudong bank based on random events set. Then we use p-III curve to...In order to study whether the random events set can be used in Rudongbank of Nantong or not, we use ADCIRC model to stimulate the storm surge affectingRudong bank based on random events set. Then we use p-III curve to fit peak-value ofsurge of all the years to get the surge of typical return periods. The result shows that theresults of fitting by ADCIRC and by historical data coincide well in lower return periods,but to higher return periods, the results of fitting by ADCIRC are significantly higher thanthat of fitting by historical data. Due to the short time, it’s not enough for the extremestorm surge events to occur, the results of higher return periods are not reliable, so wecan’t rule out the reasonability of results based on random events set. The results offitting based on random events set are accurate in lower return periods and we can alsofully estimate the surge of higher return periods based on random events set. In thesituation of lacking historical data of hundreds of years, random events set can beaccepted as a tool to compute the return period of storm surge. Consideration of globalwarming, the possibility of super typhoons’ appearance will rise, which will result inhigher surge of return periods. In order to prevent the disaster of storm surge, thegovernment needs to deepen and reinforce the coastal engineering like seawalls and embankments.展开更多
A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector lo...A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.展开更多
As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing...As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.展开更多
The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear e...The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.展开更多
As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient（SET） pulse quenching induced by single-event charge sharing...As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient（SET） pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation（STI）. The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional（3D） technology computer-aided design simulation（TCAD） results show that this technique can achieve efficient SET mitigation.展开更多
This paper deals with the communication problem in the distributed system, considering the limited battery power in the wireless network and redundant transmission among nodes. We design an event-triggered model predi...This paper deals with the communication problem in the distributed system, considering the limited battery power in the wireless network and redundant transmission among nodes. We design an event-triggered model predictive control(ET-MPC) strategy to reduce the unnecessary communication while promising the system performance. On one hand, for a linear discrete time-invariant system, a triggering condition is derived based on the Lyapunov stability. Here, in order to further reduce the communication rate, we enforce a triggering condition only when the Lyapunov function will exceed its value at the last triggered time, but an average decrease is guaranteed. On the other hand, the feasibility is ensured by minimizing and optimizing the terminal constrained set between the maximal control invariant set and the target terminal set. Finally, we provide a simulation to verify the theoretical results. It's shown that the proposed strategy achieves a good trade-off between the closed-loop system performance and communication rate.展开更多
基金funded by the National Key Research and Development Program of China(2022YFC3003502)。
文摘Local strong seismic activity shows the potential to closely follow a renewal process,which is inconsistent with the overall seismic activity that aligns with the Poisson process.Given that existing methods for synthesizing stochastic seismic event sets cannot control local seismic activity,a method based on Monte Carlo simulations has been developed for synthesizing random seismic event sets where local strong earthquakes satisfy the renewal process.This method can synthesize seismic activities in a statistical area where the overall activity conforms to the Poisson process and the major seismic activities in local potential sources or faults follow the renewal process.This paper presents long-and short-scale approaches.The long-scale earthquake catalogs are suitable for reflecting the sequential characteristics of seismic activities.Meanwhile,the short-scale catalogs focus on the impacts of specific earthquake events within a group for a detailed understanding of hazards under certain conditions,making them suitable for studies on specific earthquake sequences and geological areas or situations requiring high temporal resolution.In the applications of shortscale sequences,we find that the equivalent occurrence rate method may overestimate the seismic hazard.This synthesis method for earthquake catalogs can simulate realistic seismic activities,thereby enhancing the accuracy of hazard analysis results and is suitable for seismic hazard analysis and earthquake insurance rate setting.
基金Supported by National Natural Science Foundation of China(Nos.61176030 and 61373032)Specialized Research Fund for the Doctor Program of Higher Education of China(No.20124307110016)
文摘In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulations, this paper presents a new kind of SEUR triggered by the charge collection of the Off-PMOS and the delayed charge collection of the On-NMOS in commercial 40-nm 6 T SRAM cells. The simulation results show that the proposed SEUR can not occur at normal incidence,but can present easily at angular incidence. It is also found that the width of SET induced by this SEUR remains the same after linear energy transfer(LET) increases to a certain value. In addition, through analyzing the effect of the spacing, the adjacent transistors, the drain area, and some other dependent parameters on this new kind of SEUR, some methods are proposed to strengthen the recovery ability of SRAM cells.
文摘In order to study whether the random events set can be used in Rudongbank of Nantong or not, we use ADCIRC model to stimulate the storm surge affectingRudong bank based on random events set. Then we use p-III curve to fit peak-value ofsurge of all the years to get the surge of typical return periods. The result shows that theresults of fitting by ADCIRC and by historical data coincide well in lower return periods,but to higher return periods, the results of fitting by ADCIRC are significantly higher thanthat of fitting by historical data. Due to the short time, it’s not enough for the extremestorm surge events to occur, the results of higher return periods are not reliable, so wecan’t rule out the reasonability of results based on random events set. The results offitting based on random events set are accurate in lower return periods and we can alsofully estimate the surge of higher return periods based on random events set. In thesituation of lacking historical data of hundreds of years, random events set can beaccepted as a tool to compute the return period of storm surge. Consideration of globalwarming, the possibility of super typhoons’ appearance will rise, which will result inhigher surge of return periods. In order to prevent the disaster of storm surge, thegovernment needs to deepen and reinforce the coastal engineering like seawalls and embankments.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60976013)
文摘A study on the single event transient （SET） induced by a pulsed laser in a silicon-germanium （SiGe） heterojunction bipolar transistor （HBT） is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.
基金Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 61133007)the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025)
文摘As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.
基金Project supported in part by the National Natural Science Foundation of China(Grant No.61974056)the Natural Science Foundation of Shanghai(Grant No.19ZR1471300)+1 种基金Shanghai Science and Technology Innovation Action Plan(Grant No.19511131900)Shanghai Science and Technology Explorer Plan(Grant No.21TS1401700)。
文摘The single event transient(SET)effect in nanotube tunneling field-effect transistor with bias-induced electron–hole bilayer(EHBNT-TFET)is investigated by 3-D TCAD simulation for the first time.The effects of linear energy transfer(LET),characteristic radius,strike angle,electrode bias and hit location on SET response are evaluated in detail.The simulation results show that the peak value of transient drain current is up to 0.08 m A for heavy ion irradiation with characteristic radius of 50 nm and LET of 10 Me V·cm^(2)/mg,which is much higher than the on-state current of EHBNTTFET.The SET response of EHBNT-TFET presents an obvious dependence on LET,strike angle,drain bias and hit location.As LET increases from 2 Me V·cm^(2)/mg to 10 Me V·cm^(2)/mg,the peak drain current increases monotonically from 0.015 mA to 0.08 mA.The strike angle has an greater impact on peak drain current especially for the smaller characteristic radius.The peak drain current and collected charge increase by 0.014 mA and 0.06 fC,respectively,as the drain bias increases from 0.1 V to 0.9 V.Whether from the horizontal or the vertical direction,the most sensitive hit location is related to wt.The underlying physical mechanism is explored and discussed.
基金Project supported by the National Natural Science Foundation of China(Grant No.61376109)the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202)
文摘As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes.The so-called single-event transient（SET） pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation（STI）. The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional（3D） technology computer-aided design simulation（TCAD） results show that this technique can achieve efficient SET mitigation.
基金supported by the National Natural Science Foundation of China(61233004,61590924,61521063)
文摘This paper deals with the communication problem in the distributed system, considering the limited battery power in the wireless network and redundant transmission among nodes. We design an event-triggered model predictive control(ET-MPC) strategy to reduce the unnecessary communication while promising the system performance. On one hand, for a linear discrete time-invariant system, a triggering condition is derived based on the Lyapunov stability. Here, in order to further reduce the communication rate, we enforce a triggering condition only when the Lyapunov function will exceed its value at the last triggered time, but an average decrease is guaranteed. On the other hand, the feasibility is ensured by minimizing and optimizing the terminal constrained set between the maximal control invariant set and the target terminal set. Finally, we provide a simulation to verify the theoretical results. It's shown that the proposed strategy achieves a good trade-off between the closed-loop system performance and communication rate.
