The three-step wet etching(TSWE)method has been proven to be a promising technique for fabricating silicon nanopores.Despite its potential,one of the bottlenecks of this method is the precise control of the silicon et...The three-step wet etching(TSWE)method has been proven to be a promising technique for fabricating silicon nanopores.Despite its potential,one of the bottlenecks of this method is the precise control of the silicon etching and etch-stop,which results in obtaining a well-defined nanopore size.Herein,we present a novel strategy leveraging electrochemical passivation to achieve accurate control over the silicon etching process.By dynamically controlling the oxide layer growth,rapid and reliable etch-stop was achieved in under 4 s,enabling the controllable fabrication of sub-10 nm silicon nanopores.The thickness of the oxide layer was precisely modulated by adjusting the passivation potential,achieving nanopore size shrinkage with a precision better than 2 nm,which can be further enhanced with more refined potential control.This scalable method significantly enhances the TSWE process,offering an efficient approach for producing small-size silicon nanopores with high precision.Importantly,the precise etching control facilitated by electrochemical passivation holds promise for the cost-effective production of high-density,air-insulated monolithic integrated circuits.展开更多
通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al G...通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al Ga As/In Ga As量子阱结构激光二极管外延片,通过腐蚀停止层实现了对芯片脊波导深度的精确控制,芯片的一致性显著提高。980 nm单模半导体激光器芯片的阈值电流为11 m A,在注入电流为100 m A条件下,其光功率为93 m W,快慢轴方向远场发散角分别为40°和8°。展开更多
基金financially supported by The National Key R&D Program(2019YFA0707002)the Beijing Innovation Center for Future ChipsBeijing National Research Center for Information.
文摘The three-step wet etching(TSWE)method has been proven to be a promising technique for fabricating silicon nanopores.Despite its potential,one of the bottlenecks of this method is the precise control of the silicon etching and etch-stop,which results in obtaining a well-defined nanopore size.Herein,we present a novel strategy leveraging electrochemical passivation to achieve accurate control over the silicon etching process.By dynamically controlling the oxide layer growth,rapid and reliable etch-stop was achieved in under 4 s,enabling the controllable fabrication of sub-10 nm silicon nanopores.The thickness of the oxide layer was precisely modulated by adjusting the passivation potential,achieving nanopore size shrinkage with a precision better than 2 nm,which can be further enhanced with more refined potential control.This scalable method significantly enhances the TSWE process,offering an efficient approach for producing small-size silicon nanopores with high precision.Importantly,the precise etching control facilitated by electrochemical passivation holds promise for the cost-effective production of high-density,air-insulated monolithic integrated circuits.
文摘通过数值模拟和实验手段相结合的方法,优化了980 nm单模半导体激光器结构。给出了一种通过计算脊波导单模激光器的光场和电流场的匹配关系来预测芯片阈值电流变化规律的方法。采用金属有机物化学气相淀积方法生长了带有腐蚀停止层的Al Ga As/In Ga As量子阱结构激光二极管外延片,通过腐蚀停止层实现了对芯片脊波导深度的精确控制,芯片的一致性显著提高。980 nm单模半导体激光器芯片的阈值电流为11 m A,在注入电流为100 m A条件下,其光功率为93 m W,快慢轴方向远场发散角分别为40°和8°。
