The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution an...The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.展开更多
MoS_(2) monolayer, as a highly promising two-dimensional semiconducting material for electronic and optoelectronic applications, exhibits deep-ultraviolet(DUV) laser-induced anomalous lattice dynamics as revealed by R...MoS_(2) monolayer, as a highly promising two-dimensional semiconducting material for electronic and optoelectronic applications, exhibits deep-ultraviolet(DUV) laser-induced anomalous lattice dynamics as revealed by Raman spectroscopy. Remarkably, not only the Raman intensity of many second-order Raman peaks but also the intensity ratio between the first-order modes E′and A′_1 exhibits a non-monotonic behavior that depends on laser energy. Moreover, there are significant inconsistencies in the literature regarding the assignments of these second-order Raman modes. In this work, we perform a thorough exploration of the anomalous lattice dynamics and conduct a renewed assignment of the numerous double resonant Raman modes of MoS_(2) monolayer. At three laser energies(E_L= 2.33, 3.50, and 4.66 e V) spanning from the visible to the ultraviolet and further into the DUV region, the calculated double-resonance Raman spectra correlate reasonably well with the experimental ones in terms of both peak positions and relative intensities. We confirm that the P_1 peak at ~450 cm^(-1) represents the second-order longitudinal acoustic(2LA) overtone mode. Each of the P_i(i = 1, 2,..., 7) peaks has multiple contributions from two phonons with distinct q wavevectors. Our calculations further reveal that the DUV laser-induced anomalous lattice dynamics stems from the quantum interference effect among different Raman scattering channels.展开更多
Phosphates are important candidates for ultraviolet/deep-ultraviolet(UV/DUV)nonlinear optical(NLO)materials by good transparency ability and variability of anion species as well as different coordinated cations.Phosph...Phosphates are important candidates for ultraviolet/deep-ultraviolet(UV/DUV)nonlinear optical(NLO)materials by good transparency ability and variability of anion species as well as different coordinated cations.Phosphates have been reported as minerals or NLO materials with abundant condensed anionic framework.For phosphate-based NLO materials,how to improve the second harmonic generation(SHG)response and birefringence re-mains a great challenge.Herein,this review analyzes the structure-property relationship of the representative UV/DUV phosphates,and the microscopic mechanism to achieve a balance between the short absorption edge and large SHG response is summarized.It provides a new idea to study the UV/DUV phosphate NLO materials.展开更多
Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ra...Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ratio on the structure,optical property,surface morphology,and chemical bonding properties of the a-Ga_(2)O_(3) films was investigated.Results show that the average optical transmittance of the a-Ga_(2)O_(3) films is over 80%within the wavelength range of 300-2000 nm.The extracted optical band gap of the a-Ga_(2)O_(3) films is increased from 4.97 eV to 5.13 eV with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,due to the decrease in concentration of oxygen vacancy defects in the film.Furthermore,the optical refractive index and surface roughness of the a-Ga_(2)O_(3) films are optimized when the O_(2)/Ar flow rate ratio reaches 0.25.X-ray photoelectron spectroscopy analysis also shows that the proportion of oxygen vacancies(VO)and Ga-O chemical bonds in the O 1s peak is gradually decreased with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,proving that increasing the O_(2)/Ar flow rate ratio during film growth can reduce the concentration of oxygen vacancy defects in a-Ga_(2)O_(3) films.In this case,a-Ga_(2)O_(3) with optimal properties can be obtained.This work provides a research basis for high-performance flexible and rigid deep ultraviolet solar-blind detection devices based on a-Ga_(2)O_(3) films.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.62450006,62304217,62274157,62127807,62234011,62034008,62074142,62074140)Tianshan Innovation Team Program(Grant No.2022TSYCTD0005)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0880000)Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant Nos.2023124,Y2023032)。
文摘The 193 nm deep-ultraviolet(DUV)laser plays a critical role in advanced semiconductor chip manufacturing[1,2],micro-nano material characterization[3,4]and biomedical analysis[5,6],due to its high spatial resolution and short wavelength.Efficient and compact 193 nm DUV laser source thus becomes a hot research area.Currently,193 nm Ar F excimer gas laser is widely employed in DUV lithography systems and serves as the enabling technology for 7 and 5 nm semiconductor fabrication.
基金Project supported by the Strategic Priority Research Program of CAS (Grant No. XDB0460000)the National Natural Science Foundation of China (Grant Nos. 12404213, 52031014, and 51702146)the National Key Research and Development Program of China (Grant No. 2022YFA1203900)。
文摘MoS_(2) monolayer, as a highly promising two-dimensional semiconducting material for electronic and optoelectronic applications, exhibits deep-ultraviolet(DUV) laser-induced anomalous lattice dynamics as revealed by Raman spectroscopy. Remarkably, not only the Raman intensity of many second-order Raman peaks but also the intensity ratio between the first-order modes E′and A′_1 exhibits a non-monotonic behavior that depends on laser energy. Moreover, there are significant inconsistencies in the literature regarding the assignments of these second-order Raman modes. In this work, we perform a thorough exploration of the anomalous lattice dynamics and conduct a renewed assignment of the numerous double resonant Raman modes of MoS_(2) monolayer. At three laser energies(E_L= 2.33, 3.50, and 4.66 e V) spanning from the visible to the ultraviolet and further into the DUV region, the calculated double-resonance Raman spectra correlate reasonably well with the experimental ones in terms of both peak positions and relative intensities. We confirm that the P_1 peak at ~450 cm^(-1) represents the second-order longitudinal acoustic(2LA) overtone mode. Each of the P_i(i = 1, 2,..., 7) peaks has multiple contributions from two phonons with distinct q wavevectors. Our calculations further reveal that the DUV laser-induced anomalous lattice dynamics stems from the quantum interference effect among different Raman scattering channels.
基金supprted by the National Natural Science Foundation of China(51962033)the Xinjiang Major Science and Technology Project(2021A01001-3).
文摘Phosphates are important candidates for ultraviolet/deep-ultraviolet(UV/DUV)nonlinear optical(NLO)materials by good transparency ability and variability of anion species as well as different coordinated cations.Phosphates have been reported as minerals or NLO materials with abundant condensed anionic framework.For phosphate-based NLO materials,how to improve the second harmonic generation(SHG)response and birefringence re-mains a great challenge.Herein,this review analyzes the structure-property relationship of the representative UV/DUV phosphates,and the microscopic mechanism to achieve a balance between the short absorption edge and large SHG response is summarized.It provides a new idea to study the UV/DUV phosphate NLO materials.
基金Research Project of Shenzhen Science and Technology Innovation Committee(JCYJ20180306170801080)。
文摘Amorphous Ga_(2)O_(3)(a-Ga_(2)O_(3))thin films were prepared on flexible polyimide,rigid quartz glass,and Si substrates via radio frequency magnetron sputtering at room temperature.The effect of oxygen/Ar flow rate ratio on the structure,optical property,surface morphology,and chemical bonding properties of the a-Ga_(2)O_(3) films was investigated.Results show that the average optical transmittance of the a-Ga_(2)O_(3) films is over 80%within the wavelength range of 300-2000 nm.The extracted optical band gap of the a-Ga_(2)O_(3) films is increased from 4.97 eV to 5.13 eV with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,due to the decrease in concentration of oxygen vacancy defects in the film.Furthermore,the optical refractive index and surface roughness of the a-Ga_(2)O_(3) films are optimized when the O_(2)/Ar flow rate ratio reaches 0.25.X-ray photoelectron spectroscopy analysis also shows that the proportion of oxygen vacancies(VO)and Ga-O chemical bonds in the O 1s peak is gradually decreased with the increase in O_(2)/Ar flow rate ratio from 0 to 0.25,proving that increasing the O_(2)/Ar flow rate ratio during film growth can reduce the concentration of oxygen vacancy defects in a-Ga_(2)O_(3) films.In this case,a-Ga_(2)O_(3) with optimal properties can be obtained.This work provides a research basis for high-performance flexible and rigid deep ultraviolet solar-blind detection devices based on a-Ga_(2)O_(3) films.
