Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects ...Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects of etch parameters （rf power, dc-bias voltage and gas pressure） on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.展开更多
In order to improve the light efficiency of the conventional GaN-based light-emitting diodes （LEDs）, the indium tin oxide （ITO） film is introduced as the current spreading layer and the light anti-reflecting layer...In order to improve the light efficiency of the conventional GaN-based light-emitting diodes （LEDs）, the indium tin oxide （ITO） film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film＇s corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5μm width, i.e. 6.43%-1/3 of ITO film＇s area. An optimized simple process, i.e. inductively couple plasma （ICP）, was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED＇s light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip＇s lop values increase by 45.9% at most.展开更多
The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pres...The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of AlSbTe thin films was investigated as a function of the CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CFconcentration of 4%,power of 300 W and pressure of 80 mTorr.展开更多
High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser me...High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.展开更多
This study focuses on treating Guadua angustifolia bamboo fibers to enhance their properties for reinforcement applications in composite materials.Chemical(alkali)and physical(dry etching plasma)treatments were used s...This study focuses on treating Guadua angustifolia bamboo fibers to enhance their properties for reinforcement applications in composite materials.Chemical(alkali)and physical(dry etching plasma)treatments were used separately to augment compatibility of Guadua angustifolia fibers with various composite matrices.The influence of these treatments on the fibers’performance,chemical composition,and surface morphology were analyzed.Statistical analysis indicated that alkali treatments reduced the tensile modulus of elasticity and strength of fibers by up to 40%and 20%,respectively,whereas plasma treatments maintain the fibers’mechanical performance.FTIR spectroscopy revealed significant alterations in chemical composition due to alkali treatments,while plasma-treated fibers showed minimal changes.Surface examination through Scanning Electron Microscopy(SEM)revealed post-treatment modifications in both cases;alkali treatments served as a cleanser,eliminating lignin and hemicellulose from the fiber surface,whereas plasma treatments also produce rough surfaces.These results validate the impact of the treatments on the fiber mechanical performance,which opens up possibilities for using Guadua angustifolia fibers as an alternative reinforcement in composite manufacturing.展开更多
As the size of semiconductor devices shrinks,there is an escalating demand for carbon hard mask films with high etching selectivity for effective pattern transfer and excellent optical transparency,especially at the 6...As the size of semiconductor devices shrinks,there is an escalating demand for carbon hard mask films with high etching selectivity for effective pattern transfer and excellent optical transparency,especially at the 633 nm alignment wavelength used in photolithography.However,simultaneously achieving high etch selectivity and high optical transparency in carbon films deposited by plasma-enhanced chemical vapor deposition(PECVD)is challenging,due to the conflicting effects of deposition temperature and ion bombardment energy.This study describes the design and implementation of a deposition-etching(dep-etch)process that addresses the challenge of inherent trade-off between low extinction coefficient(k,at 633 nm)and high etch selectivity by an integrated inductively coupled plasma and capacitive coupled plasma generator plasma-enhanced chemical vapor deposition(ICP-CCP PECVD)platform,creating a hybrid dep-etch system that decouples film transparency from etch selectivity by enhancing plasma density and coupling ion bombardment for low-temperature deposition.This process prevents the formation of large sp^(2) clusters,reducing film defects,facilitating the escape of hydrogen atoms,and promoting the formation of sp^(3)C-C bonds.Consequently,the films meet the stringent criteria for advanced carbon hard mask applications,achieving an ultra-low extinction coefficient below 0.01 at 633 nm,and etching selectivity of 18.3:1 against thermal oxide SiO_(2).展开更多
文摘Amorphous indium-gallium-zinc-oxide （a-IGZO） thin-film transistor （TFT） backplane technology is the best candidate for flat panel displays （FPDs）. In this paper, a-IGZO TFT structures are described. The effects of etch parameters （rf power, dc-bias voltage and gas pressure） on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs.
文摘In order to improve the light efficiency of the conventional GaN-based light-emitting diodes （LEDs）, the indium tin oxide （ITO） film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film＇s corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5μm width, i.e. 6.43%-1/3 of ITO film＇s area. An optimized simple process, i.e. inductively couple plasma （ICP）, was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED＇s light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip＇s lop values increase by 45.9% at most.
基金supported by National Key Basic Research Program of China(Nos.2010CB934300,2011CBA00607,2011CB932800)the National Integrated Circuit Research Program of China(No.2009ZX02023-003)+1 种基金the National Natural Science Foundation of China(Nos.60906004, 60906003,61006087,61076121)the Science and Technology Council of Shanghai,China(No.1052nm07000)
文摘The dry etching characteristic of AlSbTe film was investigated by using a CF/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of AlSbTe thin films was investigated as a function of the CF/Ar ratio,the Oaddition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CFconcentration of 4%,power of 300 W and pressure of 80 mTorr.
文摘High power and high-slope efficiency 650nm band real-refractive-index ridge w aveguide AlGaInP laser diodes with compressive strained MQW active layer are for med by pure Ar ion beam etching process.Symmetric laser mesas with high perpendi cularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching metho d.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.Th e typical threshold current of these devices is 46mA at room temperature,and a s table fundamental-mode operation over 40mW is obtained.Very high slope efficien cy of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.
文摘This study focuses on treating Guadua angustifolia bamboo fibers to enhance their properties for reinforcement applications in composite materials.Chemical(alkali)and physical(dry etching plasma)treatments were used separately to augment compatibility of Guadua angustifolia fibers with various composite matrices.The influence of these treatments on the fibers’performance,chemical composition,and surface morphology were analyzed.Statistical analysis indicated that alkali treatments reduced the tensile modulus of elasticity and strength of fibers by up to 40%and 20%,respectively,whereas plasma treatments maintain the fibers’mechanical performance.FTIR spectroscopy revealed significant alterations in chemical composition due to alkali treatments,while plasma-treated fibers showed minimal changes.Surface examination through Scanning Electron Microscopy(SEM)revealed post-treatment modifications in both cases;alkali treatments served as a cleanser,eliminating lignin and hemicellulose from the fiber surface,whereas plasma treatments also produce rough surfaces.These results validate the impact of the treatments on the fiber mechanical performance,which opens up possibilities for using Guadua angustifolia fibers as an alternative reinforcement in composite manufacturing.
基金supported by the National Key R&D Program of China(2021YFA1500804)the National Natural Science Foundation of China(22121004,22038009,22250008)the Haihe Laboratory of Sustainable Chemical Transformations,the Program of Introducing Talents of Discipline to Universities(BP0618007)。
文摘As the size of semiconductor devices shrinks,there is an escalating demand for carbon hard mask films with high etching selectivity for effective pattern transfer and excellent optical transparency,especially at the 633 nm alignment wavelength used in photolithography.However,simultaneously achieving high etch selectivity and high optical transparency in carbon films deposited by plasma-enhanced chemical vapor deposition(PECVD)is challenging,due to the conflicting effects of deposition temperature and ion bombardment energy.This study describes the design and implementation of a deposition-etching(dep-etch)process that addresses the challenge of inherent trade-off between low extinction coefficient(k,at 633 nm)and high etch selectivity by an integrated inductively coupled plasma and capacitive coupled plasma generator plasma-enhanced chemical vapor deposition(ICP-CCP PECVD)platform,creating a hybrid dep-etch system that decouples film transparency from etch selectivity by enhancing plasma density and coupling ion bombardment for low-temperature deposition.This process prevents the formation of large sp^(2) clusters,reducing film defects,facilitating the escape of hydrogen atoms,and promoting the formation of sp^(3)C-C bonds.Consequently,the films meet the stringent criteria for advanced carbon hard mask applications,achieving an ultra-low extinction coefficient below 0.01 at 633 nm,and etching selectivity of 18.3:1 against thermal oxide SiO_(2).
