The parabolic cylindrical lens shaped quantum dot is investigated theoretically. The Schrǒdinger equation for an electron confined in this structure is solved in the parabolic cylindrical coordinate system. The wavef...The parabolic cylindrical lens shaped quantum dot is investigated theoretically. The Schrǒdinger equation for an electron confined in this structure is solved in the parabolic cylindrical coordinate system. The wavefunctions for the electron are presented in terms of confluent hypergeometric functions, and the electron energy spectra are also obtained.展开更多
We show that the recently proposed invariant eigenoperator method can be successfully applied to solving the energy levels of an electron in a saddle-potential quantum dot under a uniform magnetic field. The Landau di...We show that the recently proposed invariant eigenoperator method can be successfully applied to solving the energy levels of an electron in a saddle-potential quantum dot under a uniform magnetic field. The Landau diamagnetism decreases with the value wy2 - wx2 due to the existence of the saddle potential.展开更多
We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy le...We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots （QDs）. The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs（001） quantum dots with vertical nanomechanical force are investigated. Both the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proven to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots.展开更多
The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the ...The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs＇ growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.展开更多
Graphene is a newly discovered material that possesses unique electronic properties. It is a two-dimensional singlelayered sheet in which the electrons are free and quasi-relativistic. These properties may open a door...Graphene is a newly discovered material that possesses unique electronic properties. It is a two-dimensional singlelayered sheet in which the electrons are free and quasi-relativistic. These properties may open a door for many new electronic applications. In this paper we proposed a flat 2-dimensional circular graphene-semiconductor quantum dot. We have carried out theoretical studies including deriving the Dirac equation for the electrons inside the graphene-semiconductor quantum dot and solving the equation. We have established the energy structure as a function of the rotational quantum number and the size (radius) of the dot. The energy gap between the energy levels can be tuned with the radius of the quantum dot. It could be useful for quantum computation and single electron device application.展开更多
A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic ...A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.展开更多
文摘The parabolic cylindrical lens shaped quantum dot is investigated theoretically. The Schrǒdinger equation for an electron confined in this structure is solved in the parabolic cylindrical coordinate system. The wavefunctions for the electron are presented in terms of confluent hypergeometric functions, and the electron energy spectra are also obtained.
基金supported by the Doctoral Scientific Research Startup Fund of Anhui University,China (Grant No. 33190059)the National Natural Science Foundation of China (Grant No. 10874174)+1 种基金the President Foundation of the Chinese Academy of Sciencesthe Open Fund of the State Key Laboratory for Infrared Physics
文摘We show that the recently proposed invariant eigenoperator method can be successfully applied to solving the energy levels of an electron in a saddle-potential quantum dot under a uniform magnetic field. The Landau diamagnetism decreases with the value wy2 - wx2 due to the existence of the saddle potential.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201)the Fundamental Research Funds for the Central Universities (Grant No. 2011RC0402)the Program for New Century Excellent Talents in University (Grant No. NCET-10-0261)
文摘We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots （QDs）. The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs（001） quantum dots with vertical nanomechanical force are investigated. Both the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proven to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201)the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2011RC0402)the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0261)
文摘The strain and electron energy levels of InAs/GaAs（001） quantum dots （QDs） with a GaNAs strain compensation layer （SCL） are investigated. The results show that both the hydrostatic and biaxiai strain inside the QDs with a GaNAs SCL are reduced compared with those with GaAs capping layers. Moreover, most of the compressive strain in the growth surface is compensated by the tensile strain of the GaNAs SCL, which implies that the influence of the strain environment of underlying QDs upon the next-layer QDs＇ growth surface is weak and suggests that the homogeneity and density of QDs can be improved. Our results are consistent with the published experimental literature. A GaNAs SCL is shown to influence the strain and band edge. As is known, the strain and the band offset affect the electronic structure, which shows that the SCL is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the strain compensation technology can be applied to the growth of stacked QDs, which are useful in solar cells and laser devices.
文摘Graphene is a newly discovered material that possesses unique electronic properties. It is a two-dimensional singlelayered sheet in which the electrons are free and quasi-relativistic. These properties may open a door for many new electronic applications. In this paper we proposed a flat 2-dimensional circular graphene-semiconductor quantum dot. We have carried out theoretical studies including deriving the Dirac equation for the electrons inside the graphene-semiconductor quantum dot and solving the equation. We have established the energy structure as a function of the rotational quantum number and the size (radius) of the dot. The energy gap between the energy levels can be tuned with the radius of the quantum dot. It could be useful for quantum computation and single electron device application.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60966002 and 11264007)the National Key Laboratory of Surface Physics in Fudan University,China
文摘A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.
