Y_(3)Al_(2)Ga_(3)O_(12):Ce^(3+),Cr^(3+)(YAGG:Ce^(3+),Cr^(3+)),as a persistent luminescent material,has advantages of high initial luminescence intensity and long persistent time,which is promising in persistent lumine...Y_(3)Al_(2)Ga_(3)O_(12):Ce^(3+),Cr^(3+)(YAGG:Ce^(3+),Cr^(3+)),as a persistent luminescent material,has advantages of high initial luminescence intensity and long persistent time,which is promising in persistent luminescent material applications.At present,YAGG:Ce^(3+),Cr^(3+)powders exhibit good persistent performance,but their persistent performance of ceramics still needs to be further improved to meet the new requirements.In this work,(Y_(0.998)Ce_(0.002))_(3)(Al_(1-x)Cr_(x))_(2)Ga_(3)O_(12) ceramics with different Cr^(3+)doping concentrations were prepared by solid-state reaction,including air pre-sintering,hot isostatic pressing(HIP)post-treatment and air annealing,to investigate the effects of Cr^(3+)doping concentration on the microstructure,optical properties and persistent performance of the ceramics.The results showed that as the doping concentration of Cr^(3+)increased from 0.025%to 0.2%(in atom),no significant effect of Cr^(3+)concentration on the morphology of pre-sintered ceramics or HIP post-treatment ceramics was observed,but the in-line transmittance gradually increased while the persistent performance gradually decreased.Among them,YAGG:Ce^(3+),Cr^(3+)ceramics doped with 0.025%Cr^(3+)showed the strongest initial luminescence intensity exceeding 6055 mcd/m^(2) and a persistent time of 1030 min after air pre-sintering combined with HIP post-treatment and air annealing.By optimizing the Cr^(3+)doping concentration and the fabrication process,the persistent luminescence(PersL)performance of the YAGG:Ce^(3+),Cr^(3+)ceramics was obviously improved.展开更多
A solid state reaction method was used to prepare the perovskite-structured compounds BaZrl-xYxO3-a （x=0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3）. The X-ray diffraction （XRD） pattern indicated that the target perovsldte ...A solid state reaction method was used to prepare the perovskite-structured compounds BaZrl-xYxO3-a （x=0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3）. The X-ray diffraction （XRD） pattern indicated that the target perovsldte phases were obtained. With increasing Y con- centration the unit cell parameters of BaZrl-xYxO3-a samples were expanded, and Y doping became more difficult. However, high synthesis temperature is helpful to promote Y doping. The SEM results showed that the samples exhibited poor sinterability with in- creasing Y-doping content. Thermal gravimetric （TG） curves analysis showed the more mass decreasing of BaZrl-xYxO3-a （0≤x≤0.3） samples at high temperature with more Y doping and more proton introducing. The electrochemical impedance spectra （EIS） of specimens showed that conductivities of BaZrl_xYxO3（0≤x≤0.3） increased with increasing temperature from 300 to 900 ℃ in wet air. At 900 ℃, the conductivity of BaZrl-xYxO3-a （0≤x≤0.3） first increased with increasing doped amount of Y, and reached the high- est value of 1.07x 104 S/cm when x was 0.2, then decreased gradually with further increasing Y content. At 600 ℃, BaZr0.75Y0.2503-a displayed the highest conductivity, while the conductivity of BaZro.rYo.303-a was the highest at 300 ℃. The results indicated that there should be an optimum Y doping concentration yielding the highest conductivity at a constant temperature, and the optimum Y doping concentration should increase in the humidity atmosphere as the temperature decreases. So increasing the Y-doping concen- tration is helpful to improve the conductivities of BaZrl-xYxO3-a materials at low temperature.展开更多
A novel type of n/i/i/p heterojunction solar cell with a-Si：H（15 nm）/a-Si：H（10 nm）/epitaxial c-Si（47 p.m）/epitaxial c-Si（3 um） structure is fabricated by using the layer transfer technique, and the emitter l...A novel type of n/i/i/p heterojunction solar cell with a-Si：H（15 nm）/a-Si：H（10 nm）/epitaxial c-Si（47 p.m）/epitaxial c-Si（3 um） structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd （Sd=PH3/（PH3 ＋SiH4＋H2）） on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.展开更多
For high-repetition-rate nanosecond high-power solid-state lasers,it is essential to choose gain media with moderate saturation flux.Among these materials,Nd:Lu_(3)Al_(5)O_(12)(LuAG)transparent ceramics have shown sig...For high-repetition-rate nanosecond high-power solid-state lasers,it is essential to choose gain media with moderate saturation flux.Among these materials,Nd:Lu_(3)Al_(5)O_(12)(LuAG)transparent ceramics have shown significant potential.The thermal effect limits their power density in the gain element,but increasingthe size of the gain medium can help dissipate heat.However,a large aspect ratio can lead to high spontaneous fluorescence,causing amplified spontaneous emission(ASE)and parasitic oscillations(PO_(5)).A solution is to apply cladding layers to absorb stray radiation.Sm:LuAG transparent ceramics,with high absorption at 1064 nm,good transmittance at 808 nm,and a refractive index similar to that of Nd:LuAG,are ideal for cladding Nd:LuAG laser ceramics,In this work,highly transparent Sm:LuAG ceramics were successfully fabricated first through low-temperature vacuum pre-sintering combined with high-temperature hot isostatic pressing(HiP)post-treatment using the co-precipitated Sm:LuAG nano-powders.The influences of Sm^(3+)doping concentration on the microstructure and optical transmittance of Sm:LuAG ceramics were studied.The nano-powders calcined at 1100℃for 4 h showed dendritic agglomerations but relatively small particle sizes and high uniformity.Sm:LuAG ceramics with different doping amounts were obtained by vacuum sintering at 1550℃for 3 h followed by HIP post-treatment at 1550 C in an argon atmosphere at 200 MPa for 3 h.The 3 at%Sm:LuAG transparent ceramics(1.5 mm in thickness)exhibited the highest in-line transmittance of 83.9%at 808 nm,a fine grain size of 909 nm,and an absorption coefficient of 2.44 cm^(-1)at 1064 nm,indicating that it can effectively suppress ASE and PO.展开更多
In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO...In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO2 nanostructures have been studied.It is found that indium doping concentration can affect the epitaxial growth,morphology and the electrical conductance of 1D SnO2 nanostructures.It is also found that the element made by using 6 mol% indium doped SnO2 nanorods responds to nitrogen gas.展开更多
In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （A...In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.展开更多
CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on si...CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.展开更多
The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demons...The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.展开更多
Based on a theoretical model of Q-switched laser with the influences of the driving signal sent to the Pockels cell and the doping concentration of the gain medium taken into account,a method of achieving high energy ...Based on a theoretical model of Q-switched laser with the influences of the driving signal sent to the Pockels cell and the doping concentration of the gain medium taken into account,a method of achieving high energy sub-nanosecond Q-switched lasers is proposed and verified in experiment.When a Nd:YVO4 crystal with a doping concentration of 0.7 at.%is used as a gain medium and a driving signal with the optimal high-level voltage is applied to the Pockels cell,a stable single-transverse-mode electro-optical Q-switched laser with a pulse width of 0.77 ns and a pulse energy of 1.04 mJ operating at the pulse repetition frequency of 1 kHz is achieved.The precise tuning of the pulse width is also demonstrated.展开更多
A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.Th...A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.The extracted parameters from our model were tOX=20 nm,ND=1×1016cm 3,tSSi=13.2 nm,consistent with the experimental values.The results show that the simulation results agree with experimental data well.It is found that the plateau can be strongly affected by doping concentration,strained-Si layer thickness and mass fraction of Ge in the SiGe layer.The model has been implemented in the software for strained silicon MOSFET parameter extraction,and has great value in the design of the strained-Si/SiGe devices.展开更多
Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas(N2O/C) increases from 0 to 10%, the ...Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas(N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy(NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration(~3.2×10^(19)cm^(-3)) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility(~700cm^(2)/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.展开更多
Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitanc...Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.展开更多
Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency a...Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-effective CZTS SC designs.展开更多
The nano-sized BaTiO3:La3+ powders were prepared by sol-gel process using butyl phthalate, barium acetate and lanthanum oxide as raw material, and these samples were tested by means of TG-DTA, XRD and SEM. The results...The nano-sized BaTiO3:La3+ powders were prepared by sol-gel process using butyl phthalate, barium acetate and lanthanum oxide as raw material, and these samples were tested by means of TG-DTA, XRD and SEM. The results indicate that with the annealing temperature and the doped concentration rising, the powders' particle sizes will increase and decrease respectively. When annealing temperature is 900℃and doped concentration is 7%, the phase is cubic without other phases, and the particle size of power is 43 .34 nm.展开更多
Developing facile and economical strategies to fabricate nitrogen-doped porous carbon anode is desirable for dual-carbon potassium ion hybrid capacitors(PIHCs).Here,a high-concentration edge-nitrogen-doped porous carb...Developing facile and economical strategies to fabricate nitrogen-doped porous carbon anode is desirable for dual-carbon potassium ion hybrid capacitors(PIHCs).Here,a high-concentration edge-nitrogen-doped porous carbon(NPC)anode is synthesized by a template-free strategy,in which the total content of pyrrolic nitrogen and pyridinic nitrogen accounts for more than 80%of the nitrogen atoms.As a result,the NPC anode displays a capacity of 315.4 mA h g^(−1)at a current rate of 0.1 A g^(−1)and 189.1 mA h g^(−1)at 5 A g^(−1).Ex situ characterizations and density functional theory calculations demonstrate the high-concentration edge-nitrogen doping enhances K^(+)adsorption and electronic conductivity of carbon materials,resulting in good electrochemical performance.The assembled NPC//CMK-3 PIHC delivers an energy density of 71.1 W h kg^(−1)at a power density of 771.9 W kg^(−1)over 8,000 cycles.展开更多
Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conve...Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors.Moreover,the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging.Herein,we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium(V)doping in the MoS_(2)lattice with excellent doping uniformity and stability.The lateral growth of the host MoS_(2)lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter.The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS_(2)monolayer film with excessively high doping concentrations.The excellent wafer-scale uniformity of the highly V-doped MoS_(2)film was confirmed through a series of microscopic,spectroscopic,and electrical analyses.展开更多
The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the...The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.展开更多
This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodio...This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode （PPD） and the voltage difference between the PPD and the floating diffusion （FD） node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 x 64 pixels was designed and implemented in the 0.18 #m CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques.展开更多
In this work, a novel molecule pyridinylfluorene/triphenylamine hybrid （TPyFTPA） with bulky steric hindrance effects has been synthesized successfully by substituting 9-（pyridine-2-yl）-fluoren-9-yl with triphenyla...In this work, a novel molecule pyridinylfluorene/triphenylamine hybrid （TPyFTPA） with bulky steric hindrance effects has been synthesized successfully by substituting 9-（pyridine-2-yl）-fluoren-9-yl with triphenylamine （TPA） via Friedel-Crafts reaction, which possesses good thermal stability and triplet energy （ET） of 420 ℃ with 5% weight loss and 2.86 eV, respectively. Moreover, the bulky steric hindrance material shows high stable morphology by heating to 200 ℃ without finding melting phenomena and crystallization that is demonstrated by differential scanning calorimetry （DSC） curve. The bulky pyridinylfluorene end-capped TPA has been used as host material for blue phosphorescent organic light-emitting diodes （PhOLEDs） with maximum external quantum efficiencies （EQEs） of 2.7%, 3.7%, and 3.5%, at the doping ratios of 10%, 30%, and 40%, respectively. The performances of TPyFTPA-based blue PhOLEDs own wide concentration ranging from 10% to 40%, which indicates the bulky TPyFTPA might be a potential candidate for inexpensive products with simplifying process for the applications in full-color display and solid state lighting.展开更多
Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC（0001） epilayers with horizontal hot-wall CVD system using vari...Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC（0001） epilayers with horizontal hot-wall CVD system using various precursor concentrations under constant C/Si ratio. Form the experimental data it is found that silicon cluster which is formed through gas phase nucleation plays an important role in controlling the doping concentration and epitaxial growth rate of the silicon carbide. It was observed that the concentration of silicon clusters cannot reach the equilibrium value in the process by using a low Sill4 concentration, and this phenomenon has not been reported by others.展开更多
基金National Key R&D Program of China(2023YFB3506600)。
文摘Y_(3)Al_(2)Ga_(3)O_(12):Ce^(3+),Cr^(3+)(YAGG:Ce^(3+),Cr^(3+)),as a persistent luminescent material,has advantages of high initial luminescence intensity and long persistent time,which is promising in persistent luminescent material applications.At present,YAGG:Ce^(3+),Cr^(3+)powders exhibit good persistent performance,but their persistent performance of ceramics still needs to be further improved to meet the new requirements.In this work,(Y_(0.998)Ce_(0.002))_(3)(Al_(1-x)Cr_(x))_(2)Ga_(3)O_(12) ceramics with different Cr^(3+)doping concentrations were prepared by solid-state reaction,including air pre-sintering,hot isostatic pressing(HIP)post-treatment and air annealing,to investigate the effects of Cr^(3+)doping concentration on the microstructure,optical properties and persistent performance of the ceramics.The results showed that as the doping concentration of Cr^(3+)increased from 0.025%to 0.2%(in atom),no significant effect of Cr^(3+)concentration on the morphology of pre-sintered ceramics or HIP post-treatment ceramics was observed,but the in-line transmittance gradually increased while the persistent performance gradually decreased.Among them,YAGG:Ce^(3+),Cr^(3+)ceramics doped with 0.025%Cr^(3+)showed the strongest initial luminescence intensity exceeding 6055 mcd/m^(2) and a persistent time of 1030 min after air pre-sintering combined with HIP post-treatment and air annealing.By optimizing the Cr^(3+)doping concentration and the fabrication process,the persistent luminescence(PersL)performance of the YAGG:Ce^(3+),Cr^(3+)ceramics was obviously improved.
基金Project supported by National Natural Science Foundation of China （51074038, 51274057） and National High Technology Research and Development Program of China （2013AA030902）
文摘A solid state reaction method was used to prepare the perovskite-structured compounds BaZrl-xYxO3-a （x=0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3）. The X-ray diffraction （XRD） pattern indicated that the target perovsldte phases were obtained. With increasing Y con- centration the unit cell parameters of BaZrl-xYxO3-a samples were expanded, and Y doping became more difficult. However, high synthesis temperature is helpful to promote Y doping. The SEM results showed that the samples exhibited poor sinterability with in- creasing Y-doping content. Thermal gravimetric （TG） curves analysis showed the more mass decreasing of BaZrl-xYxO3-a （0≤x≤0.3） samples at high temperature with more Y doping and more proton introducing. The electrochemical impedance spectra （EIS） of specimens showed that conductivities of BaZrl_xYxO3（0≤x≤0.3） increased with increasing temperature from 300 to 900 ℃ in wet air. At 900 ℃, the conductivity of BaZrl-xYxO3-a （0≤x≤0.3） first increased with increasing doped amount of Y, and reached the high- est value of 1.07x 104 S/cm when x was 0.2, then decreased gradually with further increasing Y content. At 600 ℃, BaZr0.75Y0.2503-a displayed the highest conductivity, while the conductivity of BaZro.rYo.303-a was the highest at 300 ℃. The results indicated that there should be an optimum Y doping concentration yielding the highest conductivity at a constant temperature, and the optimum Y doping concentration should increase in the humidity atmosphere as the temperature decreases. So increasing the Y-doping concen- tration is helpful to improve the conductivities of BaZrl-xYxO3-a materials at low temperature.
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z219)the Jiangsu Innovation Program for Graduate Education, China (Grant No. CXZZ11 0206)the Priority Academic Program Development of Jiangsu Higher Education Institutions, China
文摘A novel type of n/i/i/p heterojunction solar cell with a-Si：H（15 nm）/a-Si：H（10 nm）/epitaxial c-Si（47 p.m）/epitaxial c-Si（3 um） structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd （Sd=PH3/（PH3 ＋SiH4＋H2）） on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.
基金supported by the National Key R&D Program of China(No.2023YFB3812000).
文摘For high-repetition-rate nanosecond high-power solid-state lasers,it is essential to choose gain media with moderate saturation flux.Among these materials,Nd:Lu_(3)Al_(5)O_(12)(LuAG)transparent ceramics have shown significant potential.The thermal effect limits their power density in the gain element,but increasingthe size of the gain medium can help dissipate heat.However,a large aspect ratio can lead to high spontaneous fluorescence,causing amplified spontaneous emission(ASE)and parasitic oscillations(PO_(5)).A solution is to apply cladding layers to absorb stray radiation.Sm:LuAG transparent ceramics,with high absorption at 1064 nm,good transmittance at 808 nm,and a refractive index similar to that of Nd:LuAG,are ideal for cladding Nd:LuAG laser ceramics,In this work,highly transparent Sm:LuAG ceramics were successfully fabricated first through low-temperature vacuum pre-sintering combined with high-temperature hot isostatic pressing(HiP)post-treatment using the co-precipitated Sm:LuAG nano-powders.The influences of Sm^(3+)doping concentration on the microstructure and optical transmittance of Sm:LuAG ceramics were studied.The nano-powders calcined at 1100℃for 4 h showed dendritic agglomerations but relatively small particle sizes and high uniformity.Sm:LuAG ceramics with different doping amounts were obtained by vacuum sintering at 1550℃for 3 h followed by HIP post-treatment at 1550 C in an argon atmosphere at 200 MPa for 3 h.The 3 at%Sm:LuAG transparent ceramics(1.5 mm in thickness)exhibited the highest in-line transmittance of 83.9%at 808 nm,a fine grain size of 909 nm,and an absorption coefficient of 2.44 cm^(-1)at 1064 nm,indicating that it can effectively suppress ASE and PO.
基金support from the Scientific Research Foundation for Young Talents of Fuzhou University (Grant No. 0041826483)Research Foundation for the Doctor of Guangdong Pharmaceutical University(Grant No. 2007YKX15)Research Foundation for the Excellent Yong Teacher of Guangdong Pharmaceutical University
文摘In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO2 nanostructures have been studied.It is found that indium doping concentration can affect the epitaxial growth,morphology and the electrical conductance of 1D SnO2 nanostructures.It is also found that the element made by using 6 mol% indium doped SnO2 nanorods responds to nitrogen gas.
文摘In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.
基金Project supported by the Administration of Science,Technology and Industry of National Defense of China (Grant No.HTKJ2021KL504001)the National Natural Science Foundation of China (Grant Nos.12004297 and 12174364)+3 种基金the China Postdoctoral Science Foundation (Grant No.2022M712507)the Fundamental Research Funds for the Central Universities (Grant No.xzy01202003)the National 111 Project of China (Grant No.B14040)the support from the Instrument Analysis Center of Xi’an Jiaotong University。
文摘CMOS-compatible RF/microwave devices,such as filters and amplifiers,have been widely used in wireless communication systems.However,secondary-electron emission phenomena often occur in RF/microwave devices based on silicon(Si)wafers,especially in the high-frequency range.In this paper,we have studied the major factors that influence the secondary-electron yield(SEY)in commercial Si wafers with different doping concentrations.We show that the SEY is suppressed as the doping concentration increases,corresponding to a relatively short effective escape depthλ.Meanwhile,the reduced narrow band gap is beneficial in suppressing the SEY,in which the absence of a shallow energy band below the conduction band will easily capture electrons,as revealed by first-principles calculations.Thus,the new physical mechanism combined with the effective escape depth and band gap can provide useful guidance for the design of integrated RF/microwave devices based on Si wafers.
文摘The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.
基金the National Key Research and Development Program of China(Grant No.2017YFB0405203)the Shanxi“1331 Project”Key Subjects Construction,China(Grant No.1331KSC).
文摘Based on a theoretical model of Q-switched laser with the influences of the driving signal sent to the Pockels cell and the doping concentration of the gain medium taken into account,a method of achieving high energy sub-nanosecond Q-switched lasers is proposed and verified in experiment.When a Nd:YVO4 crystal with a doping concentration of 0.7 at.%is used as a gain medium and a driving signal with the optimal high-level voltage is applied to the Pockels cell,a stable single-transverse-mode electro-optical Q-switched laser with a pulse width of 0.77 ns and a pulse energy of 1.04 mJ operating at the pulse repetition frequency of 1 kHz is achieved.The precise tuning of the pulse width is also demonstrated.
基金Projects(51308040203,6139801)supported by National Ministries and Commissions,ChinaProjects(72105499,72104089)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2010JQ8008)supported by the Natural Science Basic Research Plan in Shaanxi Province of China
文摘A physically based analytical model was developed to predict the performance of the plateau observed in the gate C-V characteristics of strained-Si/SiGe pMOSFET.Experimental results were used to validate this model.The extracted parameters from our model were tOX=20 nm,ND=1×1016cm 3,tSSi=13.2 nm,consistent with the experimental values.The results show that the simulation results agree with experimental data well.It is found that the plateau can be strongly affected by doping concentration,strained-Si layer thickness and mass fraction of Ge in the SiGe layer.The model has been implemented in the software for strained silicon MOSFET parameter extraction,and has great value in the design of the strained-Si/SiGe devices.
基金Project supported by the National Key R&D Program of China (Grant Nos. 2018YFB0406502, 2017YFF0210800, and 2017YFB0403003)the National Natural Science Foundation of China (Grant Nos. 61974059, 61674077, and 61774081)+1 种基金the Natural Science Foundation of Jiangsu Province (Grant No. BK20160065)the Fundamental Research Funds for the Central Universities。
文摘Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas(N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy(NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration(~3.2×10^(19)cm^(-3)) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility(~700cm^(2)/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.
基金Project supported by the National Key Research and Development Program of China(Grant No.2018YFB0104701)。
文摘Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.
文摘Copper Zinc Tin Sulfide (CZTS) solar cell (SC) has garnered significant attention from researchers in recent years owing to its affordability, less toxic earth abundant constituents, remarkable conversion efficiency and promising prospects for the bulk manufacture of thin film solar cells. Moreover, CZTS exhibits a high absorption coefficient and possesses an optimal adjustable direct band gap, making it a promising candidate for various photovoltaic applications. Hence, in this study, a new configuration (CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/ Al: ZnO) is introduced for CZTS SC, which was simulated using SCAPS-1D. The utilization of CuSbS<sub>2</sub> as the back surface field (BSF) and CdS as the buffer layer was investigated to enhance the performance of CZTS SC. Moreover, a comparative numerical analysis was carried out to contrast the SC configurations of CZTS/CdS/i-ZnO/Al: ZnO and CuSbS<sub>2</sub>/CZTS/CdS/i-ZnO/Al: ZnO. In this study, the impact on SC parameters such as open circuit voltage (V<sub>oc</sub>), short- circuit current density (J<sub>sc</sub>), Fill-factor (FF), and Power Conversion Efficiency (PCE) by varying thickness, doping density, defect density of absorber and buffer layer, thickness and doping density of BSF, and operating temperature have been thoroughly investigated. The optimum structure consists of i-ZnO and Al: ZnO for the window layer, CdS for the buffer layer, CZTS for the absorber layer, and BSF layers with thicknesses of 50 nm, 200 nm, 50 nm, 2000 nm, and 50 nm, respectively. The designed SC with a BSF layer had a PCE of 28.76%, J<sub>SC</sub> of 32.53 mA/cm<sup>2</sup>, V<sub>oc</sub> of 1.01233 V, and FF of 87.35%. The structure without a BSF layer has a PCE of 24.21%, V<sub>oc</sub> of 0.898 V, J<sub>SC</sub> of 31.56 mA/cm<sup>2</sup>, and FF of 85.32%. Furthermore, an analysis of temperature, quantum efficiency (QE), C- V characteristics and the J-V curve was conducted, revealing the potential of CuSbS<sub>2</sub> as a BSF and CdS as a buffer layer in high-performance, cost-effective CZTS SC designs.
文摘The nano-sized BaTiO3:La3+ powders were prepared by sol-gel process using butyl phthalate, barium acetate and lanthanum oxide as raw material, and these samples were tested by means of TG-DTA, XRD and SEM. The results indicate that with the annealing temperature and the doped concentration rising, the powders' particle sizes will increase and decrease respectively. When annealing temperature is 900℃and doped concentration is 7%, the phase is cubic without other phases, and the particle size of power is 43 .34 nm.
基金funding support from the Fundamental Research Funds for the Central Universities(Grants KY2060000150,GG2060127001,and WK2060000040)support from USTC Center for Micro and Nano-scale Research and Fabrication and NEWARE。
文摘Developing facile and economical strategies to fabricate nitrogen-doped porous carbon anode is desirable for dual-carbon potassium ion hybrid capacitors(PIHCs).Here,a high-concentration edge-nitrogen-doped porous carbon(NPC)anode is synthesized by a template-free strategy,in which the total content of pyrrolic nitrogen and pyridinic nitrogen accounts for more than 80%of the nitrogen atoms.As a result,the NPC anode displays a capacity of 315.4 mA h g^(−1)at a current rate of 0.1 A g^(−1)and 189.1 mA h g^(−1)at 5 A g^(−1).Ex situ characterizations and density functional theory calculations demonstrate the high-concentration edge-nitrogen doping enhances K^(+)adsorption and electronic conductivity of carbon materials,resulting in good electrochemical performance.The assembled NPC//CMK-3 PIHC delivers an energy density of 71.1 W h kg^(−1)at a power density of 771.9 W kg^(−1)over 8,000 cycles.
基金supported by Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Korea government(MSIT)(Nos.2019R1A2C1009025 and 2022R1A4A2000823)2022 research Fund(No.1.220024.01)of Ulsan National Institute of Science&Technology(UNIST).
文摘Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors.Moreover,the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging.Herein,we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium(V)doping in the MoS_(2)lattice with excellent doping uniformity and stability.The lateral growth of the host MoS_(2)lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter.The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS_(2)monolayer film with excessively high doping concentrations.The excellent wafer-scale uniformity of the highly V-doped MoS_(2)film was confirmed through a series of microscopic,spectroscopic,and electrical analyses.
基金supported by the Foundation of National Key Laboratory of Integrated Analog Circuits,China(No.9140C090403070C09).
文摘The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail.
基金supported by the National Natural Science Foundation of China(No.61234003)the Special Funds for Major State Basic Research Project of China(No.2011CB932902)
文摘This paper proposes pixel process techniques to reduce the charge transfer time in high speed CMOS image sensors. These techniques increase the lateral conductivity of the photo-generated carriers in a pinned photodiode （PPD） and the voltage difference between the PPD and the floating diffusion （FD） node by controlling and optimizing the N doping concentration in the PPD and the threshold voltage of the reset transistor, respectively. The techniques shorten the charge transfer time from the PPD diode to the FD node effectively. The proposed process techniques do not need extra masks and do not cause harm to the fill factor. A sub array of 32 x 64 pixels was designed and implemented in the 0.18 #m CIS process with five implantation conditions splitting the N region in the PPD. The simulation and measured results demonstrate that the charge transfer time can be decreased by using the proposed techniques. Comparing the charge transfer time of the pixel with the different implantation conditions of the N region, the charge transfer time of 0.32 μs is achieved and 31% of image lag was reduced by using the proposed process techniques.
文摘In this work, a novel molecule pyridinylfluorene/triphenylamine hybrid （TPyFTPA） with bulky steric hindrance effects has been synthesized successfully by substituting 9-（pyridine-2-yl）-fluoren-9-yl with triphenylamine （TPA） via Friedel-Crafts reaction, which possesses good thermal stability and triplet energy （ET） of 420 ℃ with 5% weight loss and 2.86 eV, respectively. Moreover, the bulky steric hindrance material shows high stable morphology by heating to 200 ℃ without finding melting phenomena and crystallization that is demonstrated by differential scanning calorimetry （DSC） curve. The bulky pyridinylfluorene end-capped TPA has been used as host material for blue phosphorescent organic light-emitting diodes （PhOLEDs） with maximum external quantum efficiencies （EQEs） of 2.7%, 3.7%, and 3.5%, at the doping ratios of 10%, 30%, and 40%, respectively. The performances of TPyFTPA-based blue PhOLEDs own wide concentration ranging from 10% to 40%, which indicates the bulky TPyFTPA might be a potential candidate for inexpensive products with simplifying process for the applications in full-color display and solid state lighting.
文摘Precursor concentration dependences of growth rate, doping concentration and surface morphology have been investigated in the epitaxial growth of 4H-SiC（0001） epilayers with horizontal hot-wall CVD system using various precursor concentrations under constant C/Si ratio. Form the experimental data it is found that silicon cluster which is formed through gas phase nucleation plays an important role in controlling the doping concentration and epitaxial growth rate of the silicon carbide. It was observed that the concentration of silicon clusters cannot reach the equilibrium value in the process by using a low Sill4 concentration, and this phenomenon has not been reported by others.
