The model of transient behavior of semiconductor with heat-conduction is an initial and boundary problem. Alternating-direction multistep preconditioned iterative methods and theory analyses are given in this paper. E...The model of transient behavior of semiconductor with heat-conduction is an initial and boundary problem. Alternating-direction multistep preconditioned iterative methods and theory analyses are given in this paper. Electric potential equation is approximated by mixed finite element method, concentration and heat-conduction equations are approximated by Galerkin alternating-direction multistep methods. Error estimates of optimal order in L2 are demonstrated.展开更多
Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is a...Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency.展开更多
柔性直流输电技术是大规模新能源外送的重要载体,未来我国大量的沙漠、戈壁、荒漠大规模新能源基地海拔偏高,甚至超过4000 m,宇宙射线大气中子通量大,严重威胁柔性直流换流阀(voltage sourced converter-high voltage direct current,VS...柔性直流输电技术是大规模新能源外送的重要载体,未来我国大量的沙漠、戈壁、荒漠大规模新能源基地海拔偏高,甚至超过4000 m,宇宙射线大气中子通量大,严重威胁柔性直流换流阀(voltage sourced converter-high voltage direct current,VSC-HVDC)功率器件的安全可靠运行。但是,目前我国柔性直流工程中换流阀尚无2000 m以上高海拔地区应用案例,国内外也缺乏大气中子辐照功率器件的失效率数据,大气中子对功率器件的影响规律不明,难以支撑工程应用。该文首次针对柔性直流使用的4.5 kV等级主流功率器件,提出绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)、旁路转折晶闸管等功率器件高海拔大气中子辐照效应的等效加速试验方法,并开展试验,结合试验结果分析了器件工作电压、工作温度、中子通量对器件失效率的影响规律,得出高海拔地区IGBT和旁路转折晶闸管的大气中子辐照失效率,为高海拔VSC-HVDC的安全设计提供指导。展开更多
研究了 In P/In P的直接键合技术 ,给出了详细的 In P/In P键合样品的电特性随健合工艺条件变化的数据 ,在低于 6 5 0℃的键合温度下实现了 In P/In P大面积的均匀直接键合 ,获得了与单晶 In P衬底相同的电特性和机械强度 .在器件的键...研究了 In P/In P的直接键合技术 ,给出了详细的 In P/In P键合样品的电特性随健合工艺条件变化的数据 ,在低于 6 5 0℃的键合温度下实现了 In P/In P大面积的均匀直接键合 ,获得了与单晶 In P衬底相同的电特性和机械强度 .在器件的键合实验中也获得了成功 ,在 In Ga As P/In P多量子阱激光器结构的外延面上键合 p- In P衬底后制作的激光器激射特性良好 .展开更多
基金This research was surpported by the National Natural Science Foundation , Mathematical TY Foun-dation (TY10126029) of China and the Youth Foundation of Shandong University.
文摘The model of transient behavior of semiconductor with heat-conduction is an initial and boundary problem. Alternating-direction multistep preconditioned iterative methods and theory analyses are given in this paper. Electric potential equation is approximated by mixed finite element method, concentration and heat-conduction equations are approximated by Galerkin alternating-direction multistep methods. Error estimates of optimal order in L2 are demonstrated.
基金supported by the National Natural Science Foundation of China(Nos.12164032 and 11964026)the Natural Science Foundation of Inner Mongolia(No.2019MS01010)+3 种基金Scientific Research Projects in Colleges and Universities in Inner Mongolia(No.NJZZ19145)Graduate Science Innovative Research Projects(No.S20210281Z)the Natural Science Foundation of Inner Mongolia(No.2022MS01014)Doctor Research Start-up Fund of Inner Mongolia Minzu University(No.BS625).
文摘Excitons have significant impacts on the properties of semiconductors.They exhibit significantly different properties when a direct semiconductor turns in to an indirect one by doping.Huybrecht variational method is also found to influence the study of exciton ground state energy and ground state binding energy in Al_(x)Ga_(1−x)As semiconductor spherical quantum dots.The Al_(x)Ga_(1−x)As is considered to be a direct semiconductor at AI concentration below 0.45,and an indirect one at the concentration above 0.45.With regards to the former,the ground state binding energy increases and decreases with AI concentration and eigenfrequency,respectively;however,while the ground state energy increases with AI concentration,it is marginally influenced by eigenfrequency.On the other hand,considering the latter,while the ground state binding energy increases with AI concentration,it decreases with eigenfrequency;nevertheless,the ground state energy increases both with AI concentration and eigenfrequency.Hence,for the better practical performance of the semiconductors,the properties of the excitons are suggested to vary by adjusting AI concentration and eigenfrequency.
文摘研究了 In P/In P的直接键合技术 ,给出了详细的 In P/In P键合样品的电特性随健合工艺条件变化的数据 ,在低于 6 5 0℃的键合温度下实现了 In P/In P大面积的均匀直接键合 ,获得了与单晶 In P衬底相同的电特性和机械强度 .在器件的键合实验中也获得了成功 ,在 In Ga As P/In P多量子阱激光器结构的外延面上键合 p- In P衬底后制作的激光器激射特性良好 .
