The relationship between ions irradiation and the induced microstructures(point defects,dislocations,clusters,etc.)could be better analyzed and explained by simulation.The mean field rate theory and cluster dynamics a...The relationship between ions irradiation and the induced microstructures(point defects,dislocations,clusters,etc.)could be better analyzed and explained by simulation.The mean field rate theory and cluster dynamics are used to simulate the effect of implanted Fe on the point defects concentration quantitatively.It is found that the depth distribution of point defect concentration is relatively gentle than that of damage calculated by SRIM software.Specifically,the damage rate and point defect concentration increase by 1.5 times and 0.6 times from depth of 120 nm to 825 nm,respectively.With the consideration of implanted Fe ions,which effectively act as interstitial atoms at the depth of high ion implantation rate,the vacancy concentration Cv decreases significantly after reaching the peak value,while the interstitial atom concentration Ci increases significantly after decline of the previous stage.At the peak depth of ion implantation,Cv dropped by 86%,and Ci increased by 6.2 times.Therefore,the implanted ions should be considered into the point defects concentration under high dose of heavy ion irradiation,which may help predict the concentration distribution of defect clusters,further analyzing the evolution behavior of solute precipitation.展开更多
To gain a physical insight into the radiation effect on nanowires（NWs）, the time resolved photoluminescence（TRPL）technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before...To gain a physical insight into the radiation effect on nanowires（NWs）, the time resolved photoluminescence（TRPL）technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10^（12） cm^（-2） to 3.0 × 10^（13） cm^（-2）. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall（SRH） recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.展开更多
Our calculations demonstrate that the concentration of neutral oxygen vacancies can affect the geometrical structrue,electronic structure, and optical properties of α-quartz. Moreover, the distribution of the neutral...Our calculations demonstrate that the concentration of neutral oxygen vacancies can affect the geometrical structrue,electronic structure, and optical properties of α-quartz. Moreover, the distribution of the neutral oxygen divacancy can also exert some influence on the properties of α-quartz. The dissimilarity and similarities are presented in the corresponding density of state（DOS） and absorption spectrum. In addition, when a higher defect concentration is involved in α-quartz,the influence of E1 center on the geometry of α-quartz becomes more significant. However, the introduction of an E1 center barely results in any improvement compared with the influence produced by the corresponding neutral defect.展开更多
We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes（divacancies and diinterstitials） in a multilayer structure. The ...We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes（divacancies and diinterstitials） in a multilayer structure. The model gives a possibility to describe qualitatively nonmonotonicity of distributions of concentrations of radiation defects on interfaces between layers of the multilayer structure. The nonmonotonicity was recently found experimentally.To take into account the nonmonotonicity we modify recently used in literature model for analysis of distribution of concentration of radiation defects. To analyze the model we used an approach of solution of boundary problems,which could be used without crosslinking of solutions on interfaces between layers of the considered multilayer structures.展开更多
The atomristor(monolayer two-dimensional(2D)-material memristor)is competitive in high-speed logic computing due to its binary feature,lower energy consumption,faster switch response,and so on.Yet to date,all-atomrist...The atomristor(monolayer two-dimensional(2D)-material memristor)is competitive in high-speed logic computing due to its binary feature,lower energy consumption,faster switch response,and so on.Yet to date,all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance.Here,by studying band structures and electron transport properties of MoS2 atomristor,a comprehensive memristive mechanism is obtained.Guided by the simulation results,monolayer MoS2 with moderated defect concentration has been fabricated in the experiment,which can build atomristors with high performance and good consistency.Based on this,for the first time,MoS2 all-atomristor logic gates are realized successfully.As a demonstration,a half-adder based on the logic gates and a binary neural network(BNN)based on crossbar arrays are evaluated,indicating the applicability in various logic computing circumstances.Owing to shorter transition time and lower energy consumption,all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.展开更多
基金the Special Funds for the Key Research and Development Program of the Ministry of Science and Technology of China(Grant No.2017YFB0702201).
文摘The relationship between ions irradiation and the induced microstructures(point defects,dislocations,clusters,etc.)could be better analyzed and explained by simulation.The mean field rate theory and cluster dynamics are used to simulate the effect of implanted Fe on the point defects concentration quantitatively.It is found that the depth distribution of point defect concentration is relatively gentle than that of damage calculated by SRIM software.Specifically,the damage rate and point defect concentration increase by 1.5 times and 0.6 times from depth of 120 nm to 825 nm,respectively.With the consideration of implanted Fe ions,which effectively act as interstitial atoms at the depth of high ion implantation rate,the vacancy concentration Cv decreases significantly after reaching the peak value,while the interstitial atom concentration Ci increases significantly after decline of the previous stage.At the peak depth of ion implantation,Cv dropped by 86%,and Ci increased by 6.2 times.Therefore,the implanted ions should be considered into the point defects concentration under high dose of heavy ion irradiation,which may help predict the concentration distribution of defect clusters,further analyzing the evolution behavior of solute precipitation.
文摘To gain a physical insight into the radiation effect on nanowires（NWs）, the time resolved photoluminescence（TRPL）technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10^（12） cm^（-2） to 3.0 × 10^（13） cm^（-2）. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall（SRH） recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11176020 and 11374217)the Doctoral Program of Higher Education of China(Grant No.20100181110080)
文摘Our calculations demonstrate that the concentration of neutral oxygen vacancies can affect the geometrical structrue,electronic structure, and optical properties of α-quartz. Moreover, the distribution of the neutral oxygen divacancy can also exert some influence on the properties of α-quartz. The dissimilarity and similarities are presented in the corresponding density of state（DOS） and absorption spectrum. In addition, when a higher defect concentration is involved in α-quartz,the influence of E1 center on the geometry of α-quartz becomes more significant. However, the introduction of an E1 center barely results in any improvement compared with the influence produced by the corresponding neutral defect.
文摘We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes（divacancies and diinterstitials） in a multilayer structure. The model gives a possibility to describe qualitatively nonmonotonicity of distributions of concentrations of radiation defects on interfaces between layers of the multilayer structure. The nonmonotonicity was recently found experimentally.To take into account the nonmonotonicity we modify recently used in literature model for analysis of distribution of concentration of radiation defects. To analyze the model we used an approach of solution of boundary problems,which could be used without crosslinking of solutions on interfaces between layers of the considered multilayer structures.
基金This work was supported by the National Natural Science Foundation of China(Nos.51971070,10974037,and 62205011)the National Key Research and Development Program of China(No.2016YFA0200403)+4 种基金Eu-FP7 Project(No.247644)CAS Strategy Pilot Program(No.XDA 09020300)Fundamental Research Funds for the Central Universities(No.buctrc202122)the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device(No.20220401)the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province(No.2022AJ05001).
文摘The atomristor(monolayer two-dimensional(2D)-material memristor)is competitive in high-speed logic computing due to its binary feature,lower energy consumption,faster switch response,and so on.Yet to date,all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance.Here,by studying band structures and electron transport properties of MoS2 atomristor,a comprehensive memristive mechanism is obtained.Guided by the simulation results,monolayer MoS2 with moderated defect concentration has been fabricated in the experiment,which can build atomristors with high performance and good consistency.Based on this,for the first time,MoS2 all-atomristor logic gates are realized successfully.As a demonstration,a half-adder based on the logic gates and a binary neural network(BNN)based on crossbar arrays are evaluated,indicating the applicability in various logic computing circumstances.Owing to shorter transition time and lower energy consumption,all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.
