摘要
To gain a physical insight into the radiation effect on nanowires（NWs）, the time resolved photoluminescence（TRPL）technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10^（12） cm^（-2） to 3.0 × 10^（13） cm^（-2）. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall（SRH） recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.
To gain a physical insight into the radiation effect on nanowires（NWs）, the time resolved photoluminescence（TRPL）technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10^（12） cm^（-2） to 3.0 × 10^（13） cm^（-2）. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall（SRH） recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.
