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Localized deep levels in Al_xGa_(1-x)N epitaxial films with various Al compositions 被引量:1
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作者 时俪洋 沈波 +2 位作者 闫建昌 王军喜 王平 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期422-426,共5页
By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions (x = 0, 0.14... By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in AlxGal-xN films, whose level position with respect to the conduction band increases as AI composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films. 展开更多
关键词 localized deep levels CURRENT-VOLTAGE CAPACITANCE-VOLTAGE high-temperature deep-level transientspectroscopy techniques
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Deep Drawing with Local Hardening on Digital Multi-axis Servo Press 被引量:4
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作者 Sebastian Kriechenbauer Reinhard Mauermann Dirk Landgrebe 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2015年第12期1490-1495,共6页
The paper discusses a new drawing technology, based on a synchronized movement of ram and cushion with multiple bending operations in alternating directions called "bi-directional deep drawing(BDD)." The goal is t... The paper discusses a new drawing technology, based on a synchronized movement of ram and cushion with multiple bending operations in alternating directions called "bi-directional deep drawing(BDD)." The goal is to avoid local thinning by strengthening the weak point using local hardening. BDD operations are realized before the conventional deep drawing process. This results in a local strain hardening at the weak point of the workpiece, which is usually located at the bottom punch radius. Two major aspects have to be given attention due to the high number of process parameters. On the one hand, for process design, it is helpful to have a tool by means of which it is possible to simultaneously create both the machine program for the servo press and the initial configuration for the process simulation. From the authors' point of view, this complexity can only be represented by a numerical analysis method, on the other hand. Consequently, both aspects are given attention in this paper. 展开更多
关键词 Bi-directional deep drawing(BDD) Local hardening Servo press Pulsation
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Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors 被引量:2
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作者 李培 郭红霞 +2 位作者 郭旗 张晋新 魏莹 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第8期204-207,共4页
We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon ... We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes. 展开更多
关键词 LOCOS DTI HBT Laser-Induced Single Event Transients in Local Oxidation of Silicon and deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors
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A monocular visual SLAM system augmented by lightweight deep local feature extractor using in-house and low-cost LIDAR-camera integrated device
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作者 Jing Li Chenhui Shi +4 位作者 Jun Chen Ruisheng Wang Zhiyuan Yang Fan Zhang Jianhua Gong 《International Journal of Digital Earth》 SCIE EI 2022年第1期1929-1946,共18页
Simultaneous Localization and Mapping(SLAM)has been widely used in emergency response,self-driving and city-scale 3D mapping and navigation.Recent deep-learning based feature point extractors have demonstrated superio... Simultaneous Localization and Mapping(SLAM)has been widely used in emergency response,self-driving and city-scale 3D mapping and navigation.Recent deep-learning based feature point extractors have demonstrated superior performance in dealing with the complex environmental challenges(e.g.extreme lighting)while the traditional extractors are struggling.In this paper,we have successfully improved the robustness and accuracy of a monocular visual SLAM system under various complex scenes by adding a deep learning based visual localization thread as an augmentation to the visual SLAM framework.In this thread,our feature extractor with an efficient lightweight deep neural network is used for absolute pose and scale estimation in real time using the highly accurate georeferenced prior map database at 20cm geometric accuracy created by our in-house and low-cost LiDAR and camera integrated device.The closed-loop error provided by our SLAM system with and without this enhancement is 1.03m and 18.28m respectively.The scale estimation of the monocular visual SLAM is also significantly improved(0.01 versus 0.98).In addition,a novel camera-LiDAR calibration workflow is also provided for large-scale 3D mapping.This paper demonstrates the application and research potential of deep-learning based vision SLAM with image and LiDAR sensors. 展开更多
关键词 deep local features lightweight network visual localization SLAM LIDAR
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A review of microseismic source location techniques in underground mining
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作者 Zhiyi Zeng Da Zhang +7 位作者 Peng Han Ying Chang Wei Zhang Jincheng Xu Ruidong Li Bingbing Han Wuhu Zhang Ning An 《MetaResource》 2025年第3期157-181,共25页
Microseismic source localization plays a critical role in monitoring mining-induced dynamic disasters,assessing rock mass stability,and analyzing excavation-induced disturbances.With increasing monitoring accuracy and... Microseismic source localization plays a critical role in monitoring mining-induced dynamic disasters,assessing rock mass stability,and analyzing excavation-induced disturbances.With increasing monitoring accuracy and data volume,various localization techniques have emerged to suit different scenarios.We systematically review the development of current microseismic location methods,which can be broadly categorized into three types:(1)Pickingbased methods,such as the Geiger and double-difference algorithms,which are suitable for well-constrained velocity models;(2)Waveform stacking-based localization methods,such as the source scanning algorithm(SSA)and cross-correlation stacking,which eliminate the need for arrival-time picking.These techniques exhibit strong noise resistance and are particularly well-suited for environments with low signal-to-noise ratios(SNR);and(3)Deep learning-based automatic localization approaches,such as PhaseNet and LOCFLOW,which are suitable for large-scale,intelligent monitoring.Furthermore,key factors affecting localization accuracy,such as sensor array geometry,arrival-time picking errors,and velocity model uncertainties,are discussed,along with optimization strategies including 3D velocity tomography,non-predefined velocity inversion,and time-varying velocity modeling.Finally,we explore future directions,including multi-station collaborative deep learning models,intelligent denoising techniques,and risk prediction frameworks constrained by statistical seismology,aiming to advance microseismic localization toward higher precision and robustness. 展开更多
关键词 microseismic source localization influencing factors intelligent fusion picking-based methods waveform stacking-based localization methods deep learning-based automatic localization approaches
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