摘要
By using high-temperature deep-level transient spectroscopy （HT-DLTS） and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions （x = 0, 0.14, 0.24, 0.33, and 0.43） have been investigated. It is found that there are three distinct deep levels in AlxGal-xN films, whose level position with respect to the conduction band increases as AI composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.
By using high-temperature deep-level transient spectroscopy （HT-DLTS） and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions （x = 0, 0.14, 0.24, 0.33, and 0.43） have been investigated. It is found that there are three distinct deep levels in AlxGal-xN films, whose level position with respect to the conduction band increases as AI composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.
基金
supported by the National Basic Research Program of China(Grant No.2012CB619300)
the National Natural Science Foundation of China(Grant Nos.11174008 and 61361166007)
