Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detecti...Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.展开更多
With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been...With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environmen...The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.展开更多
Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane im...Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane image information,and then extract the path through visual servo. The whole system can be divided into seven modules: micro control unit( MCU) processor module,image acquisition module,debugging module,motor drive module,servo drive module,speed sensor module,and voltage conversion module.In image pre-processing part,there is an introduction of binarization processing and the median filtering to strengthen the image information. About recognition algorithm,three key variables which are changed in the movement state are discussed and there are also many auxiliary algorithms that help to improve the path recognition.The experiment can verify that the whole system can accurately abstract the black guide lines from the white track and make the robot moving fast and stable by following the road parameters and conditions.展开更多
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) ...A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.展开更多
Creating gas sensors that are highly selective and function at low temperatures based on semiconductor metal oxides(SMOs)is considered a difficult endeavor,and these sensors are extensively applied in medical diagnosi...Creating gas sensors that are highly selective and function at low temperatures based on semiconductor metal oxides(SMOs)is considered a difficult endeavor,and these sensors are extensively applied in medical diagnosis,industrial manufacturing,and in spacecraft within the aerospace sector.This review article delves into the emerging horizons of chemiresistive gas sensing,particularly focusing on the synergy between polyoxometalates(POMs)and block copolymers in self-assembly for the construction of ordered mesoporous metal oxides(MMOs).It highlights the advancements in gas sensing technology,emphasizing the role of POMs as precursors for MMOs,which offer high sensitivity and selectivity due to their unique physicochemical properties.The review covers various synthetic strategies and their impact on sensor performance,including low-temperature operation,high sensitivity,and selectivity towards specific gases.It also underscores the importance of nanostructure control,heteroatom doping,and the integration of noble metal catalysts in enhancing sensor capabilities.The article concludes with future research directions,suggesting the exploration of a broader range of detectable compounds and the integration of these materials into practical devices for real-world applications.展开更多
文中设计了一种宽带低相位噪声压控振荡器(VCO)。该VCO采用了基于周期性时变电感的Class-D结构,并将共模谐振扩展技术应用于谐振腔,实现了宽带谐波整形,优化了整个带宽内的相位噪声性能。此外,将传统的N沟道金属氧化物半导体对替换为P...文中设计了一种宽带低相位噪声压控振荡器(VCO)。该VCO采用了基于周期性时变电感的Class-D结构,并将共模谐振扩展技术应用于谐振腔,实现了宽带谐波整形,优化了整个带宽内的相位噪声性能。此外,将传统的N沟道金属氧化物半导体对替换为P沟道金属氧化物半导体交叉耦合对,降低了沟道电流的热噪声与闪烁噪声。该芯片采用SMIC 55-nm CMOS工艺制造,包括焊盘在内的芯片面积为0.47 mm^(2)。测试结果表明,该VCO芯片在3.5 GHz~5.1 GHz(38.4%)的宽频率范围内能连续工作,输出功率为7.5 d Bm~7.1 d Bm,其在3.5 GHz处测试的相位噪声为-125.8 d Bc/Hz@1 MHz。当电源电压为1.8 V时,该VCO核心消耗电流为21.3 m A~23.0 m A,缓冲级消耗电流为14.4 m A~15.3 m A,对应含调谐范围的优值(Fo MT)为192.4 d Bc/Hz~189.6 d Bc/Hz。展开更多
基于高速低功耗混合应用场景下对互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)比较器性能的综合需求,系统研究其结构优化设计。阐述动态比较器在响应速度、功耗控制、输入失调与噪声抑制等方面的关键技术,介绍...基于高速低功耗混合应用场景下对互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)比较器性能的综合需求,系统研究其结构优化设计。阐述动态比较器在响应速度、功耗控制、输入失调与噪声抑制等方面的关键技术,介绍前置放大器、电源控制、闭环反馈及偏置电路的协同优化策略。结合65 nm CMOS工艺下的仿真测试结果,分析主要性能指标在典型工况下的表现,验证所提结构的可实现性与工程适应性。结果表明,该设计能够在低功耗约束下保持高速响应。展开更多
This paper gives a statistical view about important contributions and advances on semiconductor metal oxide （SMO） compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas （...This paper gives a statistical view about important contributions and advances on semiconductor metal oxide （SMO） compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas （LPG）, H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.展开更多
Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to ...Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO_(3) heterostructure films by directly depositing the AZO coating onto the WO_(3) coating using a strategy of magnetron sputtering. The AZO/WO_(3) heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO_(3) heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO_(3) heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO_(3) coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
基金supported by the Plan for Science Innovation Talent of Henan Province(No.154100510007)the Natural and Science Foundation in Henan Province(No.162300410179)the Cultivation Foundation of Henan Normal University National Project(No.2017PL04)
文摘Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.
基金This work is supported by This work was supported by the National Key R&D Program of China(Nos.2020YFB2008604 and 2021YFB3202500)the National Natural Science Foundation of China(Nos.61874034 and 51861135105)+1 种基金the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300)Fudan University-CIOMP Joint Fund(E02632Y7H0).
文摘With the rapid development of the Internet of Things,there is a great demand for portable gas sensors.Metal oxide semiconductors(MOS)are one of the most traditional and well-studied gas sensing materials and have been widely used to prepare various commercial gas sensors.However,it is limited by high operating temperature.The current research works are directed towards fabricating high-performance flexible room-temperature(FRT)gas sensors,which are effective in simplifying the structure of MOS-based sensors,reducing power consumption,and expanding the application of portable devices.This article presents the recent research progress of MOS-based FRT gas sensors in terms of sensing mechanism,performance,flexibility characteristics,and applications.This review comprehensively summarizes and discusses five types of MOS-based FRT gas sensors,including pristine MOS,noble metal nanoparticles modified MOS,organic polymers modified MOS,carbon-based materials(carbon nanotubes and graphene derivatives)modified MOS,and two-dimensional transition metal dichalcogenides materials modified MOS.The effect of light-illuminated to improve gas sensing performance is further discussed.Furthermore,the applications and future perspectives of FRT gas sensors are also discussed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金the National Natural Science Foundation of China (No.51775020)the Science Challenge Project,China (No.TZ2018007)+1 种基金the National Natural Science Foundation of China (No.62073009)the Fundamental Research Funds for Central Universities,China (No.YWF-19-BJ-J-515).
文摘The Complementary Metal-Oxide Semiconductor(CMOS)image sensor is a critical component with the function of providing accurate positioning in many space application systems.Under long-time operation in space environments,there are radiation related degradation and var-ious uncertainties affecting the positioning accuracy of CMOS image sensors,which further leads to a reliability reduction of CMOS image sensors.Obviously,the reliability of CMOS image sensors is related to their specified function,degradation,and uncertainties;however,current research has not fully described this relationship.In this paper,a comprehensive approach to reliability modelling of CMOs image sensors is proposed based on the reliability science principles.Firstly,the perfor-mance margin modelling of centroid positioning accuracy is conducted.Then,the degradation model of CMOS image sensors is derived considering the dark current increase induced by the total ionizing dose effects.Finally,various uncertainties are analyzed and quantified,and the measure-ment equation of reliability is proposed.A case study of a CMOS image sensor is conducted to apply the proposed method,and the sensitivity analysis can provide suggestions for design and use of CMOS image sensors to ensure reliability.A simulation study is conducted to present the advantages oftheproposed comprehensive approach.
基金National Natural Science Foundations of China(Nos.61272097,61305014)Natural Science Foundation of Shanghai,China(No.13ZR1455200)+6 种基金Innovation Programs of Shanghai Municipal Education Commission,China(Nos.12ZZ182,14ZZ156)Funding Scheme for Training Young Teachers in Shanghai Colleges,China(No.ZZGJD13006)Key Support Project of Shanghai Science and Technology Committee,China(No.13510501400)Research Startup Foundation of Shanghai University of Engineering Science,China(No.2013-13)The Connotative Construction Projects of Shanghai Local Colleges in the 12th Five-Year,China(No.nhky-2012-10)Shandong Province Young and Middle-Aged Scientists Research Awards Fund,China(No.BS2013DX021)Shandong Academy Young Scientists Fund Project,China(No.2013QN037)
文摘Path recognition is an inevitable core technology in the development of tracking robot. In this paper,the path tracking system of tracking robot can be realized by image sensor module based on camera to obtain lane image information,and then extract the path through visual servo. The whole system can be divided into seven modules: micro control unit( MCU) processor module,image acquisition module,debugging module,motor drive module,servo drive module,speed sensor module,and voltage conversion module.In image pre-processing part,there is an introduction of binarization processing and the median filtering to strengthen the image information. About recognition algorithm,three key variables which are changed in the movement state are discussed and there are also many auxiliary algorithms that help to improve the path recognition.The experiment can verify that the whole system can accurately abstract the black guide lines from the white track and make the robot moving fast and stable by following the road parameters and conditions.
文摘A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.
基金financial support from the Program for the Development of Science and Technology of Jilin Province(YDZJ202401335ZYTS)the Fundamental Research Funds for the Central Universities
文摘Creating gas sensors that are highly selective and function at low temperatures based on semiconductor metal oxides(SMOs)is considered a difficult endeavor,and these sensors are extensively applied in medical diagnosis,industrial manufacturing,and in spacecraft within the aerospace sector.This review article delves into the emerging horizons of chemiresistive gas sensing,particularly focusing on the synergy between polyoxometalates(POMs)and block copolymers in self-assembly for the construction of ordered mesoporous metal oxides(MMOs).It highlights the advancements in gas sensing technology,emphasizing the role of POMs as precursors for MMOs,which offer high sensitivity and selectivity due to their unique physicochemical properties.The review covers various synthetic strategies and their impact on sensor performance,including low-temperature operation,high sensitivity,and selectivity towards specific gases.It also underscores the importance of nanostructure control,heteroatom doping,and the integration of noble metal catalysts in enhancing sensor capabilities.The article concludes with future research directions,suggesting the exploration of a broader range of detectable compounds and the integration of these materials into practical devices for real-world applications.
文摘微通道板行波选通分幅相机常用于惯性约束聚变,存在体积庞大和非单视线成像等问题,可以采用互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)图像传感器(CMOS image sensor,CIS)替代微通道板变像管的方式来解决这些问题.基于0.18µm标准CMOS工艺,提出一种8×8像素阵列的CMOS图像传感器设计方案.通过设计超短快门像素电路和快门信号控制电路,实现单次4分幅成像,并采用基于单端放大器的相关双采样电路消除噪声.仿真结果表明,该电路功能正常,4幅图像像素信号均匀性优于99%,每幅图像时间分辨率为100 ps,画幅时间间隔为300 ps.
文摘文中设计了一种宽带低相位噪声压控振荡器(VCO)。该VCO采用了基于周期性时变电感的Class-D结构,并将共模谐振扩展技术应用于谐振腔,实现了宽带谐波整形,优化了整个带宽内的相位噪声性能。此外,将传统的N沟道金属氧化物半导体对替换为P沟道金属氧化物半导体交叉耦合对,降低了沟道电流的热噪声与闪烁噪声。该芯片采用SMIC 55-nm CMOS工艺制造,包括焊盘在内的芯片面积为0.47 mm^(2)。测试结果表明,该VCO芯片在3.5 GHz~5.1 GHz(38.4%)的宽频率范围内能连续工作,输出功率为7.5 d Bm~7.1 d Bm,其在3.5 GHz处测试的相位噪声为-125.8 d Bc/Hz@1 MHz。当电源电压为1.8 V时,该VCO核心消耗电流为21.3 m A~23.0 m A,缓冲级消耗电流为14.4 m A~15.3 m A,对应含调谐范围的优值(Fo MT)为192.4 d Bc/Hz~189.6 d Bc/Hz。
文摘This paper gives a statistical view about important contributions and advances on semiconductor metal oxide （SMO） compounds based gas sensors developed to detect the air pollutants such as liquefied petroleum gas （LPG）, H2S, NH3, CO2, acetone, ethanol, other volatile compounds and hazardous gases. Moreover, it is revealed that the alloy/composite made up of SMO gas sensors show better gas response than their counterpart single component gas sensors, i.e., they are found to enhance the 4S characteristics namely speed, sensitivity, selectivity and stability. Improvement of such types of sensors used for detection of various air pollutants, which are reported in last two decades, is highlighted herein.
基金financially supported by the National Natural Science Foundation of China (Nos.52172094 and 22209105)Shanghai Municipal Natural Science Foundation (No.21ZR1426700)the “Shuguang” Program of Shanghai Education Commission (No.19SG46)。
文摘Metal oxide semiconductors(MOSs) are ideal sensing materials for detecting volatile organic compounds due to their low cost, diversity, high stability, and ease of production. However, it remains a grand challenge to develop the MOSs-based gas sensors for sensing isopropanol with desired performance via a simple, effective,and controllable method. Herein, we reported the preparation of the Al-doped Zn O(AZO)/WO_(3) heterostructure films by directly depositing the AZO coating onto the WO_(3) coating using a strategy of magnetron sputtering. The AZO/WO_(3) heterostructure films were constructed by numbers of irregular nanoparticles that were interconnected with each other. The AZO/WO_(3) heterostructure films-based gas sensors exhibited excellent isopropanolsensing performance with high response, promising selectivity, low detection limit, fast response rate, wide detection range, and ideal reproducibility. The promising isopropanol-sensing performance of the AZO/WO_(3) heterostructure films arises mainly from their high uniformity, unique microstructures with high surface roughness,and the construction of the heterostructure between the AZO and WO_(3) coatings. This work provides a versatile approach to prepare the MOSs-based heterostructure films for assembling the gas sensors.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
