摘要
本文提出了一种多普勒辅助调频连续波(FMCW)雷达,该雷达兼具FMCW的精确距离分辨能力和多普勒雷达的高灵敏度,可满足室内场景的多功能应用需求.论文对关键接收模块(包括低噪声放大器、混频器、本地振荡器放大器和模拟基带电路)产生的低频噪声贡献进行了全面分析.提出了一种“射频+本振+基带”联合噪声系数改进方法,以有效抑制低频噪声.为了最大限度地减少基于电荷泵的分数N锁相环中的调频误差,采用了一种嵌套型锁相环架构及协同优化的环路参数选择方法,显著提高了啁啾线性度.该多普勒辅助FMCW雷达采用55 nm互补金属氧化物半导体工艺制造,在10 Hz和1 kHz频率下,分别实现了32 dB和12 dB的噪声系数,并在3.52 GHz的啁啾带宽内,实现了0.003 9%的啁啾线性度,从而实现最大检测距离为19.41 m和距离分辨率为4.7 cm.该雷达芯片面积为12.7 mm^(2),在3.3 V电源电压下, FMCW模式功耗为594 mW,多普勒模式功耗为432 mW.
This paper presents a Doppler-assisted frequency-modulated continuous-wave(FMCW)radar that combines the precise range resolution capability of FMCW with the high sensitivity of Doppler radar,enabling versatile performance for indoor applications.A comprehensive analysis of low-frequency noise contributions from key receiver blocks,including the low-noise amplifier(LNA),mixer,local oscillator(LO)buffer,and analog baseband(ABB)circuits,is conducted.An“RF+LO+BB”joint noise figure(NF)improvement method is proposed to effectively suppress the low-frequency noise.To reduce frequency modulation(FM)error in charge-pump-based fractional-N phase-locked loop(PLL),a nested-PLL architecture with a co-optimized loop parameter selection method is employed,resulting in significantly improved chirp linearity.Fabricated in a 55 nm CMOS technology,the proposed Doppler-assisted FMCW radar achieves NFs of 32 dB and 12 dB at 10 Hz and 1 kHz,respectively,and a chirp linearity of 0.0039%over a 3.52 GHz chirp bandwidth(BW),resulting in a maximum detection range of 19.41 m and a range resolution of 4.7 cm.The radar occupies a die area of 12.7 mm^(2) and consumes 594 mW in FMCW mode and 432 mW in Doppler mode under a 3.3 V supply.
作者
张愉沁
张子桐
张润曦
ZHANG Yuqin;ZHANG Zitong;ZHANG Runxi(Institute of Microelectronic Circuits and Systems,East China Normal University,Shanghai 200241,China)
出处
《华东师范大学学报(自然科学版)》
北大核心
2026年第2期128-138,共11页
Journal of East China Normal University(Natural Science)
基金
上海东方英才青年项目(15904-412214-24013)。
关键词
互补金属氧化物半导体
雷达
频率调制连续波
多普勒
frequency-modulated continuous wave
Doppler
radar
complementary metal-oxide semiconductor
