Besides the common short-channel effect(SCE)of threshold voltage(V_(th))roll-off during the channel length(L)downscaling of In GaZnO(IGZO)thin-film transistors(TFTs),an opposite V_(th)roll-up was reported in this work...Besides the common short-channel effect(SCE)of threshold voltage(V_(th))roll-off during the channel length(L)downscaling of In GaZnO(IGZO)thin-film transistors(TFTs),an opposite V_(th)roll-up was reported in this work.Both roll-off and roll-up effects of Vth were comparatively investigated on IGZO transistors with varied gate insulator(GI),source/drain(S/D),and device architecture.For IGZO transistors with thinner GI,the SCE was attenuated due to the enhanced gate controllability over the variation of channel carrier concentration,while the Vth roll-up became more noteworthy.The latter was found to depend on the relative ratio of S/D series resistance(R_(SD))over channel resistance(R_(CH)),as verified on transistors with different S/D.Thus,an ideal S/D engineering with small R_(SD)but weak dopant diffusion is highly expected during the downscaling of L and GI in IGZO transistors.展开更多
GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold v...GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.展开更多
Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
The modified powdery mixture of ammonium nitrate and fuel oil （MPANFO） is a new breed of industrial explosives developed years ago in China. As one of the important properties of an industrial explosive, the channel...The modified powdery mixture of ammonium nitrate and fuel oil （MPANFO） is a new breed of industrial explosives developed years ago in China. As one of the important properties of an industrial explosive, the channel effect of MPANFO was reported in this paper. A series of experiments were conducted to determine the channel effect of MPANFO. The blasthole diameter range was estimated to avoid the channel effect of MPANFO. Three empirical formulae for predicting the detonation length of MPANFO were provided in terms of the channel effect. Experiments and theoretical analysis indicate that the channel effect of MPANFO is very serious. The reason why the channel effect of MPANFO is worse than that of other industrial explosives is explained at a theoretical level. In addition, some properties of MPANFO, such as sympathetic distance, detonation velocity and brisance, are determined.展开更多
Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we obser...Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.展开更多
The bias dependence of radiation-induced narrow-width channel effects(RINCEs)in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs)is investigated.The threshold voltage of the narrow-width65 nm NM...The bias dependence of radiation-induced narrow-width channel effects(RINCEs)in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs)is investigated.The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation,due to the RINCE.The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground,which is contrary to the conclusion obtained in the old generation devices.Depending on the three-dimensional simulation,we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.展开更多
We let a set of beam splitters of vacuum mode with a chosen transmittance parameter η in interaction with a separable coherent states.This model induces the production of an attenuated quantum channels based on entan...We let a set of beam splitters of vacuum mode with a chosen transmittance parameter η in interaction with a separable coherent states.This model induces the production of an attenuated quantum channels based on entangled optical states.Indeed,the decoherence effect is exploited positively here to generate such kind of quantum channels.Next,the amplitude damping and the entanglement amount of these produced channels are enhanced thereafter by a probabilistic quasi amplification process using again a 50 : 50 beam splitter.展开更多
This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the li...This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.展开更多
Objective: To investigate the specificity of the effects of electroacupuncture (EA) at different acupoints on gastric functional activity and gastric blood flow after colorectal distension (CRD) in the rat. Methods: F...Objective: To investigate the specificity of the effects of electroacupuncture (EA) at different acupoints on gastric functional activity and gastric blood flow after colorectal distension (CRD) in the rat. Methods: Fifty Wistar rats were randomly divided into 5 groups: a control group, a Zusanli group, a non-point group, a Taichong group and a Neiguan group. Rats were anesthetized after 18 h of fasting, and a rat model of nociceptive blood pressure elevation and abnormal electrogastrogram (EGG) and gastric tension (GT) was prepared by gasbag-induced CRD. EA was given bilaterally, and its effects on gastric blood flow (GBF) of the arcus vasculosi of the greater omentum, blood pressure, EGG fast wave properties, and gastric smooth muscle tension (GT) were quantified. Results: CRD induced an increase in blood pressure that was significantly inhibited by EA at all points (all P<0.05), and the inhibitory effects were greater in the Zusanli and Neiguan groups compared to the non-point group (both P<0.05). CRD also caused reductions in GT and GBF, and in the amplitude, frequency and duration of EGG waves (all P<0.05). These effects were also reversed by EA. The effects of EA on EGG wave amplitude, GT, and GBF were superior in the Zusanli group compared to the Taichong group, Neiguan group, and the non-point group. Conclusion: EA significantly counteracted CRD-induced changes in blood pressure, GBF, EGG, and GT. The effects of stimulation at Zusanli (ST 36) were significantly greater compared to other points, indicating relative specificity of this acupoint.展开更多
The relentless down-scaling of electronics grands the modern integrated circuits(ICs)with the high speed,low power dissipation and low cost,fulfilling diverse demands of modern life.Whereas,with the semiconductor indu...The relentless down-scaling of electronics grands the modern integrated circuits(ICs)with the high speed,low power dissipation and low cost,fulfilling diverse demands of modern life.Whereas,with the semiconductor industry entering into sub-10 nm technology nodes,degrading device performance and increasing power consumption give rise to insurmountable roadblocks confronted by modern ICs that need to be conquered to sustain the Moore law's life.Bulk semiconductors like prevalent Si are plagued by seriously degraded carrier mobility as thickness thinning down to sub-5 nm,which is imperative to maintain sufficient gate electrostatic controllability to combat the increasingly degraded short channel effects.Nowadays,the emergence of two-dimensional(2D)materials opens up new gateway to eschew the hurdles laid in front of the scaling trend of modern IC,mainly ascribed to their ultimately atomic thickness,capability to maintain carrier mobility with thickness thinning down,dangling-bonds free surface,wide bandgaps tunability and feasibility to constitute diverse heterostructures.Blossoming breakthroughs in discrete electronic device,such as contact engineering,dielectric integration and vigorous channel-length scaling,or large circuits arrays,as boosted yields,improved variations and full-functioned processor fabrication,based on 2D materials have been achieved nowadays,facilitating 2D materials to step under the spotlight of IC industry to be treated as the most potential future successor or complementary counterpart of incumbent Si to further sustain the down-scaling of modern IC.展开更多
An SOI MOSFET with FINFET structure is simulated using a 3 D simulator. I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.SCE can be well c...An SOI MOSFET with FINFET structure is simulated using a 3 D simulator. I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.SCE can be well controlled by reducing fin height.Good performance can be achieved with thin height,so fin height is considered as a key parameter in device design.Simulation results show that FINFETs present performance superior to conventional single gate devices.展开更多
Enhancing catalytic activity of multi-enzyme in vitro through substrate channeling effect is promis-ing yet challenging.Herein,conjugated microporous polymers(CMPs)-scaffolded integrated en-zyme cascade systems(I-ECSs...Enhancing catalytic activity of multi-enzyme in vitro through substrate channeling effect is promis-ing yet challenging.Herein,conjugated microporous polymers(CMPs)-scaffolded integrated en-zyme cascade systems(I-ECSs)are constructed through co-entrapping glucose oxidase(GOx)and horseradish peroxidase(HRP),in which hydrogen peroxide(H_(2)O_(2)) is the intermediate product.The interplay of low-resistance mass transfer pathway and appropriate pore wall-H_(2)O_(2) interactions facilitates the directed transfer of H_(2)O_(2),resulting in 2.4-fold and 5.0-fold elevation in catalytic activ-ity compared to free ECSs and separated ECSs,respectively.The substrate channeling effect could be regulated by altering the mass ratio of GOx to HRP.Besides,I-ECSs demonstrate excellent stabili-ties in harsh environments and multiple recycling.展开更多
By performing a molecular dynamics simulation, fragmentation of Cu_n clusters scattering from a single-crystal Cu（111） surface is studied. The interactions among copper atoms are modeled by tight-binding potential, ...By performing a molecular dynamics simulation, fragmentation of Cu_n clusters scattering from a single-crystal Cu（111） surface is studied. The interactions among copper atoms are modeled by tight-binding potential, and the positions of the copper clusters at each time step are calculated by integrating the Newton equations of motion. The percentage of unfragmented clusters depends on the incident velocities, angles of incidence, and surface structure. The influence of surface structure on the fragment distribution is discussed, and the clusters appear to be more stable under an axial channeling condition. The fragment distribution shifting toward the small fragment range for cluster scattering along a random direction is confirmed, indicating that the cluster undergoes more intensive fragmentation.展开更多
Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface chann...Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.展开更多
Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have bee...Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.展开更多
An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented...An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.展开更多
We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） ...We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.展开更多
The traditional geometrical depolarization model that single transmitter to single receiver provides a simple method of polarization channel modeling. It can obtain the geometrical depolarization effect of each path i...The traditional geometrical depolarization model that single transmitter to single receiver provides a simple method of polarization channel modeling. It can obtain the geometrical depolarization effect of each path if known the antenna configuration, the polarization field radiation pattern and the spatial distribution of scatters. With the development of communication technology, information transmission spectrum is more and more scarce. The original model provides only a single channel polarization state, so the information will be limited that the polarization state carries in the polarization modulation. The research is so significance that how to carries polarization modulation information by using multi-antenna polarization state. However, the present study shows that have no depolarization effect model for multi-antenna systems. In this paper, we propose a multi-antenna geometrical depolarization model. On the basis of a single antenna to calculate the depolarization effect of the model, and through simulation to analysis the main factors that influence the depolarization effect. This article provides a multi-antenna geometrical depolarization channel modeling that can applied to large-scale array antenna, and to some extent increase the speed of information transmission.展开更多
In order to study the permeability and water-resisting ability of the strata on the top of the Ordovician in Longgu Coal Mine, this paper tested the permeability and porosity of the strata, investigated the fracture a...In order to study the permeability and water-resisting ability of the strata on the top of the Ordovician in Longgu Coal Mine, this paper tested the permeability and porosity of the strata, investigated the fracture and pore structure features of the strata, and identified the main channels which govern the permeability and water-resisting ability of the strata. The permeability of the upper, central and lower strata shows as 2.0504 × 10^-3-2.782762× 10^-3, 4.1092 × 10^-3 -7.3387 × 10^-3 and 2.0891 ×10^-3-3.2705 × 10-3 μm^2, respectively, and porosity of that is 0.6786-0.9197%, 0.3109-0.3951% and 0.9829-1.8655%, respectively. The results indicate that： （I） the main channels of the relative water-resisting layer are the pore throats with a diameter more than 6 μm; （2） the major proportion of pore throats in the vertical flow channel and the permeability first increases and then sharply decreases; （3） the fractures occurring from the top to 20 m in depth of the strata were filled and there occurred almost no fracture under the depth of 40 m; and （4） the ratio of turning point of the main flow channel in the strata on top of Ordovician can be used to confirm the thickness of filled water-resisting lavers.展开更多
Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value...Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.展开更多
基金supported financially by National key Research and Development Program under Grant 2021YFB3600802Shenzhen Municipal Scientific Program under Grant KJZD20230923114111021。
文摘Besides the common short-channel effect(SCE)of threshold voltage(V_(th))roll-off during the channel length(L)downscaling of In GaZnO(IGZO)thin-film transistors(TFTs),an opposite V_(th)roll-up was reported in this work.Both roll-off and roll-up effects of Vth were comparatively investigated on IGZO transistors with varied gate insulator(GI),source/drain(S/D),and device architecture.For IGZO transistors with thinner GI,the SCE was attenuated due to the enhanced gate controllability over the variation of channel carrier concentration,while the Vth roll-up became more noteworthy.The latter was found to depend on the relative ratio of S/D series resistance(R_(SD))over channel resistance(R_(CH)),as verified on transistors with different S/D.Thus,an ideal S/D engineering with small R_(SD)but weak dopant diffusion is highly expected during the downscaling of L and GI in IGZO transistors.
文摘GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
基金supported by the National Natural Science Foundation of China (No.50704005)
文摘The modified powdery mixture of ammonium nitrate and fuel oil （MPANFO） is a new breed of industrial explosives developed years ago in China. As one of the important properties of an industrial explosive, the channel effect of MPANFO was reported in this paper. A series of experiments were conducted to determine the channel effect of MPANFO. The blasthole diameter range was estimated to avoid the channel effect of MPANFO. Three empirical formulae for predicting the detonation length of MPANFO were provided in terms of the channel effect. Experiments and theoretical analysis indicate that the channel effect of MPANFO is very serious. The reason why the channel effect of MPANFO is worse than that of other industrial explosives is explained at a theoretical level. In addition, some properties of MPANFO, such as sympathetic distance, detonation velocity and brisance, are determined.
文摘Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11605282,11505282 and U1532261the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15
文摘The bias dependence of radiation-induced narrow-width channel effects(RINCEs)in 65-nm n-type metal-oxidesemiconductor field-effect transistors(NMOSFETs)is investigated.The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation,due to the RINCE.The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground,which is contrary to the conclusion obtained in the old generation devices.Depending on the three-dimensional simulation,we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
文摘We let a set of beam splitters of vacuum mode with a chosen transmittance parameter η in interaction with a separable coherent states.This model induces the production of an attenuated quantum channels based on entangled optical states.Indeed,the decoherence effect is exploited positively here to generate such kind of quantum channels.Next,the amplitude damping and the entanglement amount of these produced channels are enhanced thereafter by a probabilistic quasi amplification process using again a 50 : 50 beam splitter.
文摘This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.
基金supported by TCM Item of National Key Basic Study (2005CB523306, 2006CB504506 2007CB512505)the National Natural Science Foundation of China (30973796, 90709031)
文摘Objective: To investigate the specificity of the effects of electroacupuncture (EA) at different acupoints on gastric functional activity and gastric blood flow after colorectal distension (CRD) in the rat. Methods: Fifty Wistar rats were randomly divided into 5 groups: a control group, a Zusanli group, a non-point group, a Taichong group and a Neiguan group. Rats were anesthetized after 18 h of fasting, and a rat model of nociceptive blood pressure elevation and abnormal electrogastrogram (EGG) and gastric tension (GT) was prepared by gasbag-induced CRD. EA was given bilaterally, and its effects on gastric blood flow (GBF) of the arcus vasculosi of the greater omentum, blood pressure, EGG fast wave properties, and gastric smooth muscle tension (GT) were quantified. Results: CRD induced an increase in blood pressure that was significantly inhibited by EA at all points (all P<0.05), and the inhibitory effects were greater in the Zusanli and Neiguan groups compared to the non-point group (both P<0.05). CRD also caused reductions in GT and GBF, and in the amplitude, frequency and duration of EGG waves (all P<0.05). These effects were also reversed by EA. The effects of EA on EGG wave amplitude, GT, and GBF were superior in the Zusanli group compared to the Taichong group, Neiguan group, and the non-point group. Conclusion: EA significantly counteracted CRD-induced changes in blood pressure, GBF, EGG, and GT. The effects of stimulation at Zusanli (ST 36) were significantly greater compared to other points, indicating relative specificity of this acupoint.
基金supported by start-up capital of Ningbo Eastern Institute of technology。
文摘The relentless down-scaling of electronics grands the modern integrated circuits(ICs)with the high speed,low power dissipation and low cost,fulfilling diverse demands of modern life.Whereas,with the semiconductor industry entering into sub-10 nm technology nodes,degrading device performance and increasing power consumption give rise to insurmountable roadblocks confronted by modern ICs that need to be conquered to sustain the Moore law's life.Bulk semiconductors like prevalent Si are plagued by seriously degraded carrier mobility as thickness thinning down to sub-5 nm,which is imperative to maintain sufficient gate electrostatic controllability to combat the increasingly degraded short channel effects.Nowadays,the emergence of two-dimensional(2D)materials opens up new gateway to eschew the hurdles laid in front of the scaling trend of modern IC,mainly ascribed to their ultimately atomic thickness,capability to maintain carrier mobility with thickness thinning down,dangling-bonds free surface,wide bandgaps tunability and feasibility to constitute diverse heterostructures.Blossoming breakthroughs in discrete electronic device,such as contact engineering,dielectric integration and vigorous channel-length scaling,or large circuits arrays,as boosted yields,improved variations and full-functioned processor fabrication,based on 2D materials have been achieved nowadays,facilitating 2D materials to step under the spotlight of IC industry to be treated as the most potential future successor or complementary counterpart of incumbent Si to further sustain the down-scaling of modern IC.
文摘An SOI MOSFET with FINFET structure is simulated using a 3 D simulator. I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.SCE can be well controlled by reducing fin height.Good performance can be achieved with thin height,so fin height is considered as a key parameter in device design.Simulation results show that FINFETs present performance superior to conventional single gate devices.
文摘Enhancing catalytic activity of multi-enzyme in vitro through substrate channeling effect is promis-ing yet challenging.Herein,conjugated microporous polymers(CMPs)-scaffolded integrated en-zyme cascade systems(I-ECSs)are constructed through co-entrapping glucose oxidase(GOx)and horseradish peroxidase(HRP),in which hydrogen peroxide(H_(2)O_(2)) is the intermediate product.The interplay of low-resistance mass transfer pathway and appropriate pore wall-H_(2)O_(2) interactions facilitates the directed transfer of H_(2)O_(2),resulting in 2.4-fold and 5.0-fold elevation in catalytic activ-ity compared to free ECSs and separated ECSs,respectively.The substrate channeling effect could be regulated by altering the mass ratio of GOx to HRP.Besides,I-ECSs demonstrate excellent stabili-ties in harsh environments and multiple recycling.
基金Project supported by the National Natural Science Foundation of China(Grant No.11405166)
文摘By performing a molecular dynamics simulation, fragmentation of Cu_n clusters scattering from a single-crystal Cu（111） surface is studied. The interactions among copper atoms are modeled by tight-binding potential, and the positions of the copper clusters at each time step are calculated by integrating the Newton equations of motion. The percentage of unfragmented clusters depends on the incident velocities, angles of incidence, and surface structure. The influence of surface structure on the fragment distribution is discussed, and the clusters appear to be more stable under an axial channeling condition. The fragment distribution shifting toward the small fragment range for cluster scattering along a random direction is confirmed, indicating that the cluster undergoes more intensive fragmentation.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083),Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.
文摘An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.
基金Project supported by the Council of Scientific&Industrial Research(CSIR),Government of India under the SRF Scheme(Sanction Letter No:08/237(0005)/2012-EMR-I)
文摘We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.
基金supported in part by the National Natural Science Foundation of China(61561039,61461044)the Natural Science Foundation of Ningxia(NZ14045)the Higher School Science and Technology Research Project of Ningxia(NGY2014051)
文摘The traditional geometrical depolarization model that single transmitter to single receiver provides a simple method of polarization channel modeling. It can obtain the geometrical depolarization effect of each path if known the antenna configuration, the polarization field radiation pattern and the spatial distribution of scatters. With the development of communication technology, information transmission spectrum is more and more scarce. The original model provides only a single channel polarization state, so the information will be limited that the polarization state carries in the polarization modulation. The research is so significance that how to carries polarization modulation information by using multi-antenna polarization state. However, the present study shows that have no depolarization effect model for multi-antenna systems. In this paper, we propose a multi-antenna geometrical depolarization model. On the basis of a single antenna to calculate the depolarization effect of the model, and through simulation to analysis the main factors that influence the depolarization effect. This article provides a multi-antenna geometrical depolarization channel modeling that can applied to large-scale array antenna, and to some extent increase the speed of information transmission.
基金Financial supports for this work provided by the National Basic Research Program of China(2013CB227900)the Innovation of Graduate Student Training Project in Jiangsu Province of China(CXZZ13_0934)
文摘In order to study the permeability and water-resisting ability of the strata on the top of the Ordovician in Longgu Coal Mine, this paper tested the permeability and porosity of the strata, investigated the fracture and pore structure features of the strata, and identified the main channels which govern the permeability and water-resisting ability of the strata. The permeability of the upper, central and lower strata shows as 2.0504 × 10^-3-2.782762× 10^-3, 4.1092 × 10^-3 -7.3387 × 10^-3 and 2.0891 ×10^-3-3.2705 × 10-3 μm^2, respectively, and porosity of that is 0.6786-0.9197%, 0.3109-0.3951% and 0.9829-1.8655%, respectively. The results indicate that： （I） the main channels of the relative water-resisting layer are the pore throats with a diameter more than 6 μm; （2） the major proportion of pore throats in the vertical flow channel and the permeability first increases and then sharply decreases; （3） the fractures occurring from the top to 20 m in depth of the strata were filled and there occurred almost no fracture under the depth of 40 m; and （4） the ratio of turning point of the main flow channel in the strata on top of Ordovician can be used to confirm the thickness of filled water-resisting lavers.
文摘Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes.
