摘要
This article describes the effective channel length degradation under hot carrier stressing. The extraction is based on the IDs-Vcs characteristics by maximum transconductance （maximum slope of IDs ＆ VGS） in the linear region. The transconductance characteristics are determine for the several devices of difference drawn channel length. The effective channel length of submicron LDD （Lightly Doped Drain） NMOSFETs （Metal Oxide Semiconductor Field Effect Transistor） under hot carrier stressing was measured at the stress time varying from zero to 10,000 seconds. It is shown that the effective channel length was increased with time. This is caused by charges trapping in the oxide during stress. The increased of effective channel length （△Leff） is seem to be increased sharply as the gate channel length is decrease.
