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Study on Manganin High Pressure Array Sensor
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作者 DUAN Jianhua DU Xiaosong YANG Bangchao ZHOU Hongren(School of Microelectronics and Solid-State Electronics,UESTC Chengdu 610054 China) 《Journal of Electronic Science and Technology of China》 2003年第1期60-62,共3页
A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrat... A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrates,and then covered by a layer of SiO_2 thin films by electron beamevaporation.Based on impedance match method of 'back configuration',the highest pressure measuredin Al target is 51.68 Gpa,the highest pressure in SiO_2 package is 35.396 Gpa and the piezoresistancecoefficient k is 0.026 Gpa^(-1).The upper limit and measure precision of sensor is improved. 展开更多
关键词 manganin film sensor fused silica back configuration
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