摘要
A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrates,and then covered by a layer of SiO_2 thin films by electron beamevaporation.Based on impedance match method of 'back configuration',the highest pressure measuredin Al target is 51.68 Gpa,the highest pressure in SiO_2 package is 35.396 Gpa and the piezoresistancecoefficient k is 0.026 Gpa^(-1).The upper limit and measure precision of sensor is improved.
A new kind of thin film manganin aray gauge is fabricated by adopting a new sensorfabrication technique.The sensitive materials (manganin thin films) are first deposited by magnetronsputtering on fused silica substrates,and then covered by a layer of SiO_2 thin films by electron beamevaporation.Based on impedance match method of 'back configuration',the highest pressure measuredin Al target is 51.68 Gpa,the highest pressure in SiO_2 package is 35.396 Gpa and the piezoresistancecoefficient k is 0.026 Gpa^(-1).The upper limit and measure precision of sensor is improved.
