Electrical conductivity has been measured at different temperatures for ZrO2 doped with various molar ratios of CuO. The conductivity increases due to migration of vacancies, created by doping. The conductivity was fo...Electrical conductivity has been measured at different temperatures for ZrO2 doped with various molar ratios of CuO. The conductivity increases due to migration of vacancies, created by doping. The conductivity was found to increase with increase in temperature till 220℃ and thereafter decrease due to collapse of the fluorite framework. A second rise in conductivity around 500 ℃ was observed due to phase transition of ZrO2. X-ray powder diffraction, DTA and IR studies were carried out for confirming doping effect and phase transition in ZrO2.展开更多
以氧化硅粉体为载体,用非均匀成核法制备了锑掺杂氧化锡(antimony-doped tin oxide,ATO)包覆氧化硅导电粉。用电阻测试仪、场发射扫描电镜和能谱仪对粉体进行了表征。结果表明:包覆物加入量由二氧化硅用量的12.5%增加到100%时,包覆层厚...以氧化硅粉体为载体,用非均匀成核法制备了锑掺杂氧化锡(antimony-doped tin oxide,ATO)包覆氧化硅导电粉。用电阻测试仪、场发射扫描电镜和能谱仪对粉体进行了表征。结果表明:包覆物加入量由二氧化硅用量的12.5%增加到100%时,包覆层厚度也从110nm增加到600nm。ATO包覆氧化硅粉体的电阻率随处理温度升高的变化趋势与同条件下制备的ATO基本一致,其中包覆物加入量为100%,75%,50%的ATO包覆氧化硅粉在500～1200℃热处理后的电阻率低于200Ω·cm,1100℃热处理后的25%包覆物加入量粉体的电阻率仅为99.9Ω·cm。包覆物加入量为12.5%的包覆粉体的电阻率由1100℃处理后的120.6Ω·cm上升到1200℃处理后的超过20MΩ·cm,这是因为包覆层较薄,在高温处理过程中包覆层上颗粒长大并收缩而使包覆层受到破坏。展开更多
文摘Electrical conductivity has been measured at different temperatures for ZrO2 doped with various molar ratios of CuO. The conductivity increases due to migration of vacancies, created by doping. The conductivity was found to increase with increase in temperature till 220℃ and thereafter decrease due to collapse of the fluorite framework. A second rise in conductivity around 500 ℃ was observed due to phase transition of ZrO2. X-ray powder diffraction, DTA and IR studies were carried out for confirming doping effect and phase transition in ZrO2.
文摘以氧化硅粉体为载体,用非均匀成核法制备了锑掺杂氧化锡(antimony-doped tin oxide,ATO)包覆氧化硅导电粉。用电阻测试仪、场发射扫描电镜和能谱仪对粉体进行了表征。结果表明:包覆物加入量由二氧化硅用量的12.5%增加到100%时,包覆层厚度也从110nm增加到600nm。ATO包覆氧化硅粉体的电阻率随处理温度升高的变化趋势与同条件下制备的ATO基本一致,其中包覆物加入量为100%,75%,50%的ATO包覆氧化硅粉在500～1200℃热处理后的电阻率低于200Ω·cm,1100℃热处理后的25%包覆物加入量粉体的电阻率仅为99.9Ω·cm。包覆物加入量为12.5%的包覆粉体的电阻率由1100℃处理后的120.6Ω·cm上升到1200℃处理后的超过20MΩ·cm,这是因为包覆层较薄,在高温处理过程中包覆层上颗粒长大并收缩而使包覆层受到破坏。
