AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching....AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching.The AlGaN/GaN HEMTs with 0.2μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_（max） of 60 GHz.At 10 GHz frequency and 20 V drain bias,the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.展开更多
基金Project supported by the National Key Science & Technology Special Project,China(No.2008ZX01002-002)the Major Program and State Key Program of National Natural Science Foundation of China(Nos.60890191,60736033)the Fundamental Research Funds for the Central Universities,China(Nos.K50510250003,K50510250006)
文摘AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching.The AlGaN/GaN HEMTs with 0.2μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_（max） of 60 GHz.At 10 GHz frequency and 20 V drain bias,the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.
