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Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET
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作者 Gang Chen Song Bai +1 位作者 Yonghong Tao Yun Li 《Energy and Power Engineering》 2013年第4期1284-1287,共4页
A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12... A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2. 展开更多
关键词 4H-SIC VJFET Ohmic TRENCH IMPLANT
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Effects of Trenched Film Hole Configurations on the Endwall Film Cooling and Suction Side Phantom Cooling 被引量:3
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作者 DU Kun LI Zhigang LI Jun 《Journal of Thermal Science》 SCIE EI CAS CSCD 2019年第5期905-914,共10页
To maximize the turbine thermal efficiency, modern gas turbine’s inlet temperature is significantly augmented within the past few decades. To prolong the lifespan of gas turbines, many efficient cooling techniques ha... To maximize the turbine thermal efficiency, modern gas turbine’s inlet temperature is significantly augmented within the past few decades. To prolong the lifespan of gas turbines, many efficient cooling techniques have been proposed and applied in the endwall cooling schemes. However, conventional discrete film hole does not take effect at the leading edge nearby region. In this research, how the trenched film hole configurations affects the endwall cooling and phantom cooling characteristics were deeply studied by using a verified approach. Steady 3D Reynolds-averaged Navier-Stokes(RANS) governing equations together with the shear stress transport(SST) k-w turbulence model have been solved. Firstly, results indicate that trenched film holes greatly influence the cooling effectiveness at leading edge nearby region compared to normal case. Nevertheless, suction side phantom cooling is hardly influenced by the trenched film holes. Secondly, the case with a smaller trench width obtains higher endwall cooling effectiveness, particularly at upstream region. More importantly, the cases with W=3D achieve large cooling effectiveness at leading edge nearby region with little influence by trench depth. Additionally, majority of trenched film holes coolant flow is driven towards middle passage. Therefore, the suction side phantom cooling is unaffected by the trenched film holes. 展开更多
关键词 gas TURBINE TURBINE ENDWALL COOLING trenched film HOLES PHANTOM COOLING numerical simulations
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A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer
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作者 赵秋明 李琦 +1 位作者 唐宁 李勇昌 《Journal of Semiconductors》 EI CAS CSCD 2013年第3期31-34,共4页
A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the b... A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance. 展开更多
关键词 trenched buried oxide layer breakdown voltage ON-RESISTANCE compensation layer
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一种新型P-shield区自钳位的低比导通电阻SiC MOSFET器件
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作者 孔谋夫 赵亮 +2 位作者 艾昭宇 程泽俞 邓鸿飞 《微电子学》 北大核心 2025年第1期140-146,共7页
提出了一种采用自偏置PMOS钳位栅极沟槽底部P-shield区的新型沟槽型SiC功率MOSFET器件。提出器件集成的PMOS以沟槽底部P-shield区为源极、P+源区为漏极及沟槽内填充金属为栅极,且该PMOS的栅极与漏极短接。利用该PMOS的钳位作用,实现对... 提出了一种采用自偏置PMOS钳位栅极沟槽底部P-shield区的新型沟槽型SiC功率MOSFET器件。提出器件集成的PMOS以沟槽底部P-shield区为源极、P+源区为漏极及沟槽内填充金属为栅极,且该PMOS的栅极与漏极短接。利用该PMOS的钳位作用,实现对栅极沟槽底部的P-shield区电位的调控。当器件导通时,PMOS截止,P-shield区浮空,从而改善SiC MOSFET的沟道区的JFET效应,降低器件的比导通电阻;当器件处于阻断耐压状态时,自钳位PMOS导通,使得P-shield区的电位得到钳制,从而增强P-shield区对栅氧化层的电场屏蔽作用,提高器件的可靠性。仿真结果表明,该提出器件的击穿电压(BV)为1 430 V,比导通电阻(R_(on,sp))为1.70 mΩ·cm^(2);提出器件与传统器件相比耐压相近,R_(on,sp)获得改善,栅漏电荷和高频优值分别提升超过14.3%和20%,同时该器件具有比传统器件更低的栅氧电场。 展开更多
关键词 SiC Trench MOSFET 击穿电压 比导通电阻 栅氧电场
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Mariana Trench:The secrets of Earth's deepest point
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作者 刘畅 《疯狂英语(新读写)》 2025年第8期6-8,76,共4页
In 1875,the HMS(皇家海军舰艇)Challenger stopped in the middle of the Pacific Ocean,southwest of the Mariana Islands,to conduct a routine depth sounding.As they'd done countless times before,the British scientists ... In 1875,the HMS(皇家海军舰艇)Challenger stopped in the middle of the Pacific Ocean,southwest of the Mariana Islands,to conduct a routine depth sounding.As they'd done countless times before,the British scientists and sailors on board lowered a weighted rope into the water.Unlike those other times,however,the rope kept falling,seemingly without an end.After nearly 8,230 meters,it finally hit the bottom—the first human attempt at what became known as the Mariana Trench. 展开更多
关键词 Mariana Islands Pacific Ocean weighted rope Mariana Trench depth soundingas mariana trench HMS Challenger Depth Sounding
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语·库·构·建
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《疯狂英语(新读写)》 2025年第8期21-23,76,共4页
Ⅰ主题单词海洋环境coast海岸beach海滩wave海浪tide潮汐current(海洋或江河的)水流reef礁trench海沟salinity盐浓度海洋探索工具submarine潜艇.
关键词 TIDE coast REEF SALINITY current TRENCH SUBMARINE BEACH
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Ground vibration isolation using mass scatters:A comparative study with trench barriers and wave-impeding blocks
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作者 Mohannad Mhanna Majeed R.Sabaa +1 位作者 Hayder A.Mahdi Mahdi Karkush 《Deep Underground Science and Engineering》 2025年第4期792-799,共8页
Traffic-induced ground vibrations cause significant problems for residents and nearby structures.Reducing the effect of these vibrations on the neighboring environment is a key challenge,particularly in urban areas.Th... Traffic-induced ground vibrations cause significant problems for residents and nearby structures.Reducing the effect of these vibrations on the neighboring environment is a key challenge,particularly in urban areas.This study presents both numerical and experimental investigations of the performance of mass scatters for screening ground vibrations.A three-dimensional numerical model is validated and extended to conduct a comparative study on the efficiency of three geotechnical methods of isolation.These methods include trench barriers,waveimpeding blocks(WIBs),and mass scatters.The results showed that mass scatters represent an efficient way of scattering ground vibrations,and their efficiency is mainly related to the weights of mass scatters and their natural frequency,which control the dynamic soil response in the frequency domain.Rigid trench barriers are less effective than soft ones,and their efficiency is more pronounced regarding the WIB.Soft barriers with a depth of an order of half of the wavelength can decrease the vibration levels by up to 50%,which is comparable to the performance of enormous mass scatters.The dimensions of WIBs must be chosen according to the wavelength of incident waves and the cutoff frequency of the topsoil layer.Considering the significant wavelength of traffic-induced vibration,the use of trench barriers or WIBs becomes impractical and expensive;therefore,mass scatters appear to be an efficient and practical solution. 展开更多
关键词 ground-borne vibration ISOLATION mass scatter trench barrier wave-impeding block
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Occurrence,Vertical Variations and Degradation Behavior of Dissolved Amino Acids in Seawater of the Northern Yap Trench
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作者 XIAO Shaoke HAO Wen +4 位作者 JIN Zihan NIU Jiaohong WU Cheng ZHOU Chenhaojin DING Haibing 《Journal of Ocean University of China》 2025年第6期1692-1704,共13页
Amino acids are widely present as intermediates in marine nitrogen cycle.However,amino acid distributions in deep-sea seawater,especially in abyssal and hadal zones,are very limited.This study investigated the occurre... Amino acids are widely present as intermediates in marine nitrogen cycle.However,amino acid distributions in deep-sea seawater,especially in abyssal and hadal zones,are very limited.This study investigated the occurrence,vertical variations,and degradation behavior of dissolved free amino acids(DFAA),dissolved combined amino acids(DCAA),and total hydrolyzable amino acids(THAA)in seawater from the sea surface to the hadal zone of the northern Yap Trench.The results showed that concentrations ofΣDFAA,ΣDCAA andΣTHAA ranged from 0.09 to 1.78,0.99 to 17.69 and 1.18 to 18.01μmol/L in the study area,respectively.In the seawater from the trench,glycine was the predominant DFAA,while the DCAA and THAA was dominated by threonine.Mean concentrations of DFAA,DCAA and THAA in different water layers were in the order of:mesopelagic>euphotic>abyssal>bathyal.The concentrations of DCAA and THAA in the sediment-seawater interface were higher than those from the euphotic to abyssal layer.The organic matter(OM)in the seawater of the stations near the Yap Islands were older,while the OM in the stations near the Yap Trench axis was relatively fresh above 1000-m depth.The OM in the sediment-seawater interface is older,especially on the west side of the trench.This is the first systematic survey of DCAA and THAA in the Yap Trench,providing insights into the vertical variations and degradation behaviors of amino acids from the sea surface to the hadal environment. 展开更多
关键词 amino acids Yap Trench ABYSS hadal zone diagenetic index
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Subduction Initiation and Mafic Intrusions: Rethinking the South China Sea-Luzon Connection
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作者 HE Xiaobo HE Mingli +2 位作者 WANG Xingyue ZHAO Minghui DONG Miao 《CT理论与应用研究(中英文)》 2025年第5期826-829,共4页
The conventional view suggests that the subduction of the South China Sea plate beneath Luzon occurred due to the oceanic lithosphere’s high density,facilitating subduction initiation.However,before the South China S... The conventional view suggests that the subduction of the South China Sea plate beneath Luzon occurred due to the oceanic lithosphere’s high density,facilitating subduction initiation.However,before the South China Sea opened,a continental margin likely existed,meaning that Luzon was directly adjacent to the continental margin rather than the oceanic basin.This would make subduction initiation more challenging.Here,we propose a new model suggesting that during the formation of the South China Sea,extensive mafic magmatic underplating occurred along its continental margin.The high-density magmatic additions may have increased the overall density of the continental margin,potentially exceeding that of Luzon,thereby enabling subduction to proceed. 展开更多
关键词 Manila Trench mafic intrusions LUZON subduction initiation
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Deep-sea Evolution Unlocked
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《Bulletin of the Chinese Academy of Sciences》 2025年第1期15-15,共1页
The hadal zone-Earth’s deepest oceanic trenches below 6,000 meters-has long been considered a lifeless abyss.Researchers from the Institute of Hydrobiology(IHB)and the Institute of Deep-Sea Science and Engineering(ID... The hadal zone-Earth’s deepest oceanic trenches below 6,000 meters-has long been considered a lifeless abyss.Researchers from the Institute of Hydrobiology(IHB)and the Institute of Deep-Sea Science and Engineering(IDSSE),both under the Chinese Academy of Sciences,together with collaborators from Northwestern Polytechnical University,recently decoded how fish thrive in this extreme realm through two evolutionary pathways while uncovering alarming traces of human pollution in these pristine ecosystems.Their discovery was published in Cell on March 6,2025. 展开更多
关键词 human pollution hadal zone deep sea evolution evolutionary pathways oceanic trenches fish
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广义预测控制逆矩阵Toeplitz变换的快速算法 被引量:5
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作者 陈志旺 刘文龙 刘志辉 《仪器仪表学报》 EI CAS CSCD 北大核心 2010年第7期1626-1631,共6页
为提高广义预测控制系统的实时性,基于Toeplitz变换提出了广义预测控制(GPC)逆矩阵的快速算法。在预测时域N和控制时域M相等与不相等两种情况下,将控制律求逆部分变换成Toeplitz形式,采用Trench-Zohar求逆算法和下三角矩阵求逆算法快速... 为提高广义预测控制系统的实时性,基于Toeplitz变换提出了广义预测控制(GPC)逆矩阵的快速算法。在预测时域N和控制时域M相等与不相等两种情况下,将控制律求逆部分变换成Toeplitz形式,采用Trench-Zohar求逆算法和下三角矩阵求逆算法快速求取变换后的逆矩阵。分析表明,该算法计算量比常规求逆计算低一阶,并且步骤简便,容易编程实现。实验研究验证了该算法的有效性。 展开更多
关键词 广义预测控制 逆矩阵 TOEPLITZ矩阵 Trench—Zohar算法
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Trench MOSFET的研究与进展 被引量:12
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作者 苏延芬 刘英坤 《半导体技术》 CAS CSCD 北大核心 2007年第4期277-280,292,共5页
研究总结了功率MOSFET器件与BJT器件相比的发展优势。介绍了作为VDMOSFET进一步发展的新型器件Trench MOSFET研究提出的背景及意义,并从其基本结构出发阐述了Trench MOSFET与VDMOS相比的电学性能特点。最后对其发展现状,关键技术和结构... 研究总结了功率MOSFET器件与BJT器件相比的发展优势。介绍了作为VDMOSFET进一步发展的新型器件Trench MOSFET研究提出的背景及意义,并从其基本结构出发阐述了Trench MOSFET与VDMOS相比的电学性能特点。最后对其发展现状,关键技术和结构参数及其发展趋势进行了概括、总结和展望。 展开更多
关键词 Trench金属氧化物场效应晶体管 比导通电阻 击穿电压 元胞面积 箱型掺杂
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射频功率Trench MOSFET研制 被引量:1
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作者 苏延芬 刘英坤 +3 位作者 邓建国 胡顺欣 冯彬 董四华 《微纳电子技术》 CAS 2008年第7期380-382,386,共4页
在国内首次研制出了一种采用条状元胞结构、特殊的栅槽刻蚀条件、特殊的栅介质生长前处理工艺及多晶硅栅的射频功率Trench MOSFET器件。该器件漏源击穿电压大于62V、漏极电流大于3.0A、跨导大于0.8S、阂值电压2~3V、导通电阻比同样... 在国内首次研制出了一种采用条状元胞结构、特殊的栅槽刻蚀条件、特殊的栅介质生长前处理工艺及多晶硅栅的射频功率Trench MOSFET器件。该器件漏源击穿电压大于62V、漏极电流大于3.0A、跨导大于0.8S、阂值电压2~3V、导通电阻比同样条件的VDMOS降低了19%~43%,在175MHz、VDS=12VTN出功率Po为7W、漏极效率ηD为44%、功率增益GP为10dB。 展开更多
关键词 TRENCH MOSFET 导通电阻 沟道密度 垂直沟道结构 饱和压降
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基于载流子抽取模型的Trench Gate/Field-stop IGBT驱动器有源箝位功能分析 被引量:1
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作者 陈玉香 罗皓泽 +1 位作者 李武华 何湘宁 《电源学报》 CSCD 2016年第6期136-142,共7页
针对Trench gate/Field-stop IGBT结构特有的关断过程中集电极电流下降率不可控问题,引入了载流子抽取模型来模拟器件关断过程中的集电极电流下降阶段器件内部载流子的动态行为特性,并以此为基础分析了驱动器为适应Trench gate/Field-St... 针对Trench gate/Field-stop IGBT结构特有的关断过程中集电极电流下降率不可控问题,引入了载流子抽取模型来模拟器件关断过程中的集电极电流下降阶段器件内部载流子的动态行为特性,并以此为基础分析了驱动器为适应Trench gate/Field-Stop IGBT结构这种关断特性而引入的有源箝位功能的作用机理,验证了载流子抽取模型在器件级与电路级交互作用分析中的实用性,为后续实现器件与电路的最佳匹配奠定了基础。 展开更多
关键词 Trench gate/Field-Stop IGBT 集电极电流下降率 不可控性 载流子抽取模型 有源箝位功能
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Separating component parts of soil respiration under Robinia pseudoacacia plantation in the Taihang Mountains,China 被引量:2
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作者 Na Zhao Ping Meng Xinxiao Yu 《Journal of Forestry Research》 SCIE CAS CSCD 2017年第3期529-537,共9页
Partitioning the respiratory components of soil surface CO2 efflux is important in understanding carbon turnover and in identifying the soil carbon sink/source function in response to land-use change. The sensitivitie... Partitioning the respiratory components of soil surface CO2 efflux is important in understanding carbon turnover and in identifying the soil carbon sink/source function in response to land-use change. The sensitivities of soil respiration components on changing climate patterns are currently not fully understood. We used trench and isotopic methods to separate total soil respiration into autotrophic (RA) and heterotrophic components (RH). This study was undertaken on a Robinia pseudoacacia L. plantation in the southern Taihang Mountains, China. The fractionation of soil ^13CO2 was analyzed by comparing the δ^13C of soil CO2 extracted from buried steel tubes with results from Gas Vapor Probe Kits at a depth of 50 cm.at the preliminary test (2.03‰). The results showed that the contribution of autotrophic respiration (fRA) increased with increasing soil depth.The contribution of heterotrophic respiration (fR/4) declined with increasing soil depth. The contribution of autotrophic respiration was similar whether estimated by the trench method (fRA, 23.50%) or by the isotopic method in which a difference in value of ^13C between soil and plant prevailed in the natural state (RC, 21.03%). The experimental error produced by the trench method was insignificant as compared with that produced by the isotopic method, providing a technical basis for further investigations. 展开更多
关键词 Autotrophic respiration Heterotrophic respiration Isotopic method trenched method
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Test and analysis of dynamic compaction vibration based on piezoelectric sensor
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作者 段伟 韩云山 +2 位作者 董彦莉 秦伟华 吴晗 《Journal of Measurement Science and Instrumentation》 CAS CSCD 2015年第2期116-122,共7页
The paper takes a new campus project site of Shanxi university town for example, tests the influence of dynamic com- paction vibration and vibration isolation effect of isolation trench on this ground, and compares th... The paper takes a new campus project site of Shanxi university town for example, tests the influence of dynamic com- paction vibration and vibration isolation effect of isolation trench on this ground, and compares the influences of the dynamic compaction vibration on surrounding buildings with isolation trench and without it. Furthermore, the attenuation law of dy- namic compaction vibration in fill foundation of the loess area under different tamping energy and how to determine safe distance of dynamic compaction construction are studied. And then the quantitative relationship between acceleration and vibration source in new campus project site is presented. We derive the evaluation method that dynamic compaction construction affects adjacent buildings by contrasting with the existing standards and norms. The monitoring results show that isolation trench makes the amplitude attenuation of the horizontal velocity of dynamic compaction vibration reach above 75%, and the safe dis- tance be 30 m under the tamping energy of 6 000 kN · m. Therefore, isolation trench is better for vibration reduction under dynamic compaction construction. 展开更多
关键词 dynamic compaction VIBRATION safety distance isolation trench piezoelectric sensor
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Trench MOS Controlled Thyristor
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作者 张鹤鸣 戴显英 +1 位作者 张义门 林大松 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第5期554-557,共4页
A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors ex... A new structure of power MOS-gated thyristor named Trench MOS Controlled Thyristor (TMCT) is presented.The MOSFETs used to turn on and turn off the thrysitor are formed with UMOS technology.No parasitic transistors exist in this structure,so the problems created by the parasitic transistors can be eliminated.So,the TMCT is expected to be of better performance.The experimental results of the multicellular 600V TMCT with the active area of 02mm2 show that the on-state drop is 125V at 300A/cm2,and the maximum controllable current reaches 296A/cm2 at the gate voltage of -20V and with an inductive load. 展开更多
关键词 trench MOS THYRISTOR parasitic transistors
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Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill
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作者 朱泳 闫桂珍 +4 位作者 王成伟 杨振川 范杰 周健 王阳元 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期16-21,共6页
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimi... A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0~100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance. 展开更多
关键词 deep reactive ion etching electrical isolation trenches bulk microstructures monolithic integration
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A Novel Polysilicon and Oxide Sandwich Deep Trench with Field Limiting Ring for RF Power Transistors
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作者 齐臣杰 傅军 +1 位作者 王军军 刘理天 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第11期1398-1402,共5页
A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane... A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized. 展开更多
关键词 deep trench field limiting ring breakdown voltage
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广义预测控制矩阵求逆的快速算法研究 被引量:1
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作者 陈志兴 刘宇 陆静颖 《科技信息》 2012年第31期89-89,141,共2页
为提高广义预测控制系统的实时性,基于Toeplitz变换提出了广义预测控制(GPC)逆矩阵的快速算法.在预测时域N和控制时域M相等与不相等两种情况下,将控制律求逆部分变换成Toeplitz形式,采用Trench-Zohar求逆算法快速求取变换后的逆矩阵.分... 为提高广义预测控制系统的实时性,基于Toeplitz变换提出了广义预测控制(GPC)逆矩阵的快速算法.在预测时域N和控制时域M相等与不相等两种情况下,将控制律求逆部分变换成Toeplitz形式,采用Trench-Zohar求逆算法快速求取变换后的逆矩阵.分析表明,该算法计算量比常规求逆计算低一阶,并且步骤简便,容易编程实现. 展开更多
关键词 广义预测控制 TOEPLITZ矩阵 Trench—Zohar算法
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