In the present study, 10 patients with ischemic stroke in the left hemisphere and six healthy controls were subjected to acupuncture at right Waiguan （TE5）. In ischemic stroke subjects, functional MRI showed enhance...In the present study, 10 patients with ischemic stroke in the left hemisphere and six healthy controls were subjected to acupuncture at right Waiguan （TE5）. In ischemic stroke subjects, functional MRI showed enhanced activation in Broadmann areas 5, 6, 7, 18, 19, 24, 32, the hypothalamic inferior lobe, the mamiilary body, and the ventral posterolateral nucleus of the left hemisphere, and Broadmann areas 4, 6, 7, 18, 19 and 32 of the right hemisphere, but attenuated activation of Broadmann area 13, the hypothalamic inferior lobe, the posterior lobe of the tonsil of cerebellum, and the culmen of the anterior lobe of hypophysis, in the left hemisphere and Broadmann area 13 in the right hemisphere. In ischemic stroke subjects, a number of deactivated brain areas were enhanced, including Broadmann areas 6, 11,20, 22, 37, and 47, the culmen of the anterior lobe of hypophysis, alae lingulae cerebella, and the posterior lobe of the tonsil of cerebellum of the left hemisphere, and Broadmann areas 8, 37, 45 and 47, the culmen of the anterior lobe of hypophysis, pars tuberalis adenohypophyseos, inferior border of lentiform nucleus, lateral globus pallidus, inferior temporal gyrus, and the parahippocampal gyrus of the right hemisphere. These subjects also exhibited attenuation of a number of deactivated brain areas, including Broadmann area 7. These data suggest that acupuncture at Waiguan specifically alters brain function in regions associated with sensation, vision, and motion in ischemic stroke patients. By contrast, in normal individuals, acupuncture at Waiguan generally activates brain areas associated with insomnia and other functions.展开更多
The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristi...The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.展开更多
The amalgamation of multi-subjects often elicits novel materials,new concepts and unexpected applications.Recently,Ge2 Sb2 Te5,as the most established phasechange material,has been found to exhibit decent thermoelectr...The amalgamation of multi-subjects often elicits novel materials,new concepts and unexpected applications.Recently,Ge2 Sb2 Te5,as the most established phasechange material,has been found to exhibit decent thermoelectric performance in its stable,hexagonal phase.The challenge for higher figure of merit(zT) values lies in reducing the hole carrier concentration and enhancing the Seebeck coefficient,which,however,can be hardly realized by conventional doping.Here in this work,we report that the electrical properties of Ge2 Sb2 Te5 can be readily optimized by anion-site modulation.Specifically,Se/S substitution for Te induces stronger and more ionic bonding,lowering the hole density.Furthermore,an increase in electronic density of state is introduced by Se substitution,contributing to a large increase in Seebeck coefficient.Combined with the reduced thermal conductivity,maximum zT values above 0.7 at 800 K have been achieved in Se/S-alloyed materials,which is ~30% higher than that in the pristine Ge2Sb2 Te5.展开更多
基金supported by the National Basic Research Program of China(973 Program),No.2006CB504505,2012CB518504the Third Key Construction Program of "211 Project" of Guangdong Province
文摘In the present study, 10 patients with ischemic stroke in the left hemisphere and six healthy controls were subjected to acupuncture at right Waiguan （TE5）. In ischemic stroke subjects, functional MRI showed enhanced activation in Broadmann areas 5, 6, 7, 18, 19, 24, 32, the hypothalamic inferior lobe, the mamiilary body, and the ventral posterolateral nucleus of the left hemisphere, and Broadmann areas 4, 6, 7, 18, 19 and 32 of the right hemisphere, but attenuated activation of Broadmann area 13, the hypothalamic inferior lobe, the posterior lobe of the tonsil of cerebellum, and the culmen of the anterior lobe of hypophysis, in the left hemisphere and Broadmann area 13 in the right hemisphere. In ischemic stroke subjects, a number of deactivated brain areas were enhanced, including Broadmann areas 6, 11,20, 22, 37, and 47, the culmen of the anterior lobe of hypophysis, alae lingulae cerebella, and the posterior lobe of the tonsil of cerebellum of the left hemisphere, and Broadmann areas 8, 37, 45 and 47, the culmen of the anterior lobe of hypophysis, pars tuberalis adenohypophyseos, inferior border of lentiform nucleus, lateral globus pallidus, inferior temporal gyrus, and the parahippocampal gyrus of the right hemisphere. These subjects also exhibited attenuation of a number of deactivated brain areas, including Broadmann area 7. These data suggest that acupuncture at Waiguan specifically alters brain function in regions associated with sensation, vision, and motion in ischemic stroke patients. By contrast, in normal individuals, acupuncture at Waiguan generally activates brain areas associated with insomnia and other functions.
文摘The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.
基金financially supported by the National Key Research and Development Program of China(Nos.2017YFA0700705 and 2018YFB0703600)the National Natural Science Foundation of China(Nos.51625205,91963208 and 51802333)Shanghai Sailing Program(No.18YF1426700)。
文摘The amalgamation of multi-subjects often elicits novel materials,new concepts and unexpected applications.Recently,Ge2 Sb2 Te5,as the most established phasechange material,has been found to exhibit decent thermoelectric performance in its stable,hexagonal phase.The challenge for higher figure of merit(zT) values lies in reducing the hole carrier concentration and enhancing the Seebeck coefficient,which,however,can be hardly realized by conventional doping.Here in this work,we report that the electrical properties of Ge2 Sb2 Te5 can be readily optimized by anion-site modulation.Specifically,Se/S substitution for Te induces stronger and more ionic bonding,lowering the hole density.Furthermore,an increase in electronic density of state is introduced by Se substitution,contributing to a large increase in Seebeck coefficient.Combined with the reduced thermal conductivity,maximum zT values above 0.7 at 800 K have been achieved in Se/S-alloyed materials,which is ~30% higher than that in the pristine Ge2Sb2 Te5.
