Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by...Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.展开更多
In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were hig...In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth, dense and crack-free surface morphology. Out-of-plane, in-plane texture, and surface roughness of multi-buffer layers were improved under optimized deposition conditions. Full width at half maximum (FWHM) values of out-of-plane and in-plane were about 4° and 5.5° in 50 cm double-sided buffed template. YBa2Cu3O7-δ films with thickness of 1.2 μm were deposited on both sides of the buffed tape. Both sides showed similar critical current density, Jc (77 K, self field) as 0.8 MA/cm2 and 0.7 MA/cm2, respectively.展开更多
Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage curre...Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.展开更多
VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant i...VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.展开更多
The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit t...The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.展开更多
The rutile TiO2 nanorod arrays with 240 nm in length, 30 nm in diameter, and 420 btm 2 in areal density were prepared by the hydrothermal method to replace the typical 200-300 nm thick mesoporous TiO2 thin films in pe...The rutile TiO2 nanorod arrays with 240 nm in length, 30 nm in diameter, and 420 btm 2 in areal density were prepared by the hydrothermal method to replace the typical 200-300 nm thick mesoporous TiO2 thin films in perovskite solar cells. The CH3NH3PbI3 xBrx capping layers with different thicknesses were obtained on the TiO2 nanorod arrays using different concentration PbI2.DMSO complex precursor solutions in DMF and the photovoltaic performances of the corresponding solar cells were compared. The perovskite solar cells based on 240 nm long TiO2 nanorod arrays and 420 nm thick CH3NH3PbI3 xBrx capping layers showed the best photoelectric conversion efficiency （PCE） of 15.56% and the average PCE of 14.93 ± 0.63% at the relative humidity of 50%-54% under the illumination of simulated AM 1.5 sunlight （100 mW.cm-2）.展开更多
Vertically aligned TiO2/SrTiO3 core–shell heterostructured nanowire arrays with different shell thicknesses(5–40 nm)were fabricated on fluorine-doped tin oxide substrate via a hydrothermal process.Microstructural ch...Vertically aligned TiO2/SrTiO3 core–shell heterostructured nanowire arrays with different shell thicknesses(5–40 nm)were fabricated on fluorine-doped tin oxide substrate via a hydrothermal process.Microstructural characterization demonstrated that the TiO2 nanowires were uniformly coated by the singlecrystal SrTiO3 shell,where continuous and large-area interface could be clearly observed.By this means,significantly enhanced photoelectrochemical water splitting properties(0.78 mA·cm^-2 at 1.23 V vs.RHE)were successfully realized in well-designed sample(with a shell thickness of 5–10 nm)compared with those of pristine TiO2(0.38 mA·cm^-2 at 1.23 V vs.RHE).The improvement of photoelectrochemical properties was attributed to the improved charge injection and charge separation,which are calculated by the results of water oxidation and sulfite oxidation measurements.Based on these results,a mechanism was proposed that SrTiO3 shell acted as an electron–hole separation layer to improve the photocurrent density.On the other hand,the sample with an over-thick SrTiO3 shell(20–40 nm)exhibited slightly reduced photoelectrochemical properties(0.66 mA·cm^-2),which could be explained by the increase of the recombination rate in thethicker SrTiO3 shell.This work provided a facile strategy to improve and modulate the photoelectrochemical performance of heterostructured photoanodes.展开更多
基金supported by the National Key Research and Development Program of China(No.2021YFA0715600)the National Natural Science Foundation of China(Nos.62274125,52192611)+2 种基金the Guangdong Basic and Applied Basic Research Fund(No.2023A1515030084)the Key Research and Development Program of Shaanxi Province(Grant No.2024GX-YBXM-410)the fund of the State Key Laboratory of Solidification Processing in NWPU(No.SKLSP202220).
文摘Optimizing the orientation of β-Ga_(2)O_(3) has emerged as an effective strategy to design high-performance β-Ga_(2)O_(3) device,but the orientation growth mechanism and approach have not been revealed yet.Herein,by employing AlN buffer layer,the highly preferred orientation of β-Ga_(2)O_(3)(100)film rather than(-201)film is realized on 4H-SiC substrate at low sputtering power and temperature.Because β-Ga_(2)O_(3)(100)film exhibits a slower growth speed than(-201)film,the former possesses the higher dangling bond density and the lower nucleation energy,and a large conversion barrier exists between these two ori-entations.Moreover,the AlN buffer layer can suppress the surface oxidation of the 4H-SiC substrate and eliminate the strain of β-Ga_(2)O_(3)(100)film,which further reduces the nucleation energy and en-larges the conversion barrier.Meanwhile,the AlN buffer layer can increase the oxygen vacancy formation energy and decrease the oxygen vacancy concentration of β-Ga_(2)O_(3)(100)film.Consequently,the solar-blind photodetector based on the oriented film exhibits the outstanding detectivity of 1.22×10^(12) Jones and photo-to-dark current ratio of 1.11×10^(5),which are the highest among the reported β-Ga_(2)O_(3) solar-blind photodetector on the SiC substrate.Our results offer in-depth insights into the preferred orientation growth mechanism,and provide an effective way to design high-quality β-Ga_(2)O_(3)(100)orientation film and high-performance solar-blind photodetector.
文摘In this paper, we report a continuous deposition method for double-sided CeO2/YSZ/Y2O3 buffer layers by reel-to-reel in a D.C. magnetron reactive sputtering system. X-ray diffraction exhibited all the samples were highly c-axis oriented and atomic force microscope observations revealed a smooth, dense and crack-free surface morphology. Out-of-plane, in-plane texture, and surface roughness of multi-buffer layers were improved under optimized deposition conditions. Full width at half maximum (FWHM) values of out-of-plane and in-plane were about 4° and 5.5° in 50 cm double-sided buffed template. YBa2Cu3O7-δ films with thickness of 1.2 μm were deposited on both sides of the buffed tape. Both sides showed similar critical current density, Jc (77 K, self field) as 0.8 MA/cm2 and 0.7 MA/cm2, respectively.
基金Project supported by the Foundation of the Education Commission of Shanghai Municipality (Grant Nos.07ZZ14, 08SG41)the National Natural Science Foundation of China (Grant No.50711130241)the Shanghai Rising Star Program (GrantNo.08QH14008)
文摘Ba0.6Sr0.4TiO3 （BST） thin films with and without HfO 2 buffer layer were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Dependences of HfO 2 thickness on the dielectric property and leakage current of BST thin films were focused. The dielectric constant of BST thin films increased and then decreased with the increase of HfO 2 thickness, while the dielectric relaxation was gradually improved. The loss tangent and leakage current under positive bias decreased with the HfO 2 thickness increasing. The leakage current analysis based on the Schottky emission indicated an improvement of the BST/Pt interface with HfO 2 buffer layer. The loss tangent, tunability and figure of merit of optimized HfO 2 buffered BST thin film achieved 0.009 8, 21.91% （E max = 200 kV/cm）, 22.40 at 10 6 Hz, respectively.
基金financially supported by the National Natural Science Foundation of China (Nos. 51401046, 51572042, 61131005, 61021061, and 61271037)International Cooperation Projects (Nos. 2013HH0003 and 2015DFR50870)+3 种基金the 111 Project (No. B13042)the Sichuan Province S&T program (Nos. 2014GZ0003, 2015GZ0091, and 2015GZ0069)Fundamental Research Funds for the Central Universitiesthe start-up fund from the University of Electronic Science and Technology of China
文摘VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.
文摘The CeO2 and Y2O3 buffer layers were deposited on the cube textured metallic Ni substrates by using reactive magnetron sputtering. Ar/H2 mixed atmosphere, which is used as pre-depositing gas, can effectively inhibit the formation of NiO. In addition, the linear relationship between pre-depositing time and total depositing time is required to ensure the epitaxial growth of the films. The growth conditions of CeO2 and Y2O3 were comparatively studied, and it is found that the windows of substrate temperatures and pressures for CeO2 films are wider than that for Y2O3 films.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51472071 and 51272061)Talent Project of Hefei University of Technology,China(Grant Nos.75010-037004 and 75010-037003)
文摘The rutile TiO2 nanorod arrays with 240 nm in length, 30 nm in diameter, and 420 btm 2 in areal density were prepared by the hydrothermal method to replace the typical 200-300 nm thick mesoporous TiO2 thin films in perovskite solar cells. The CH3NH3PbI3 xBrx capping layers with different thicknesses were obtained on the TiO2 nanorod arrays using different concentration PbI2.DMSO complex precursor solutions in DMF and the photovoltaic performances of the corresponding solar cells were compared. The perovskite solar cells based on 240 nm long TiO2 nanorod arrays and 420 nm thick CH3NH3PbI3 xBrx capping layers showed the best photoelectric conversion efficiency （PCE） of 15.56% and the average PCE of 14.93 ± 0.63% at the relative humidity of 50%-54% under the illumination of simulated AM 1.5 sunlight （100 mW.cm-2）.
基金financially supported by the National Natural Science Foundation of China (Nos. 51232006, 51472218 and 11474249)the National Basic Research Program of China (No. 2015CB654900)
文摘Vertically aligned TiO2/SrTiO3 core–shell heterostructured nanowire arrays with different shell thicknesses(5–40 nm)were fabricated on fluorine-doped tin oxide substrate via a hydrothermal process.Microstructural characterization demonstrated that the TiO2 nanowires were uniformly coated by the singlecrystal SrTiO3 shell,where continuous and large-area interface could be clearly observed.By this means,significantly enhanced photoelectrochemical water splitting properties(0.78 mA·cm^-2 at 1.23 V vs.RHE)were successfully realized in well-designed sample(with a shell thickness of 5–10 nm)compared with those of pristine TiO2(0.38 mA·cm^-2 at 1.23 V vs.RHE).The improvement of photoelectrochemical properties was attributed to the improved charge injection and charge separation,which are calculated by the results of water oxidation and sulfite oxidation measurements.Based on these results,a mechanism was proposed that SrTiO3 shell acted as an electron–hole separation layer to improve the photocurrent density.On the other hand,the sample with an over-thick SrTiO3 shell(20–40 nm)exhibited slightly reduced photoelectrochemical properties(0.66 mA·cm^-2),which could be explained by the increase of the recombination rate in thethicker SrTiO3 shell.This work provided a facile strategy to improve and modulate the photoelectrochemical performance of heterostructured photoanodes.
