A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition techniq...A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.展开更多
A new zero-dimensional（0D） thioborate compound Ba（13）（BS3）6（SnS6）, the first one in the AE/B/Sn/Q（AE=alkali-earth metals; Q=S, Se, Te） family, has been synthesized by conventional high-temperature solid-stat...A new zero-dimensional（0D） thioborate compound Ba（13）（BS3）6（SnS6）, the first one in the AE/B/Sn/Q（AE=alkali-earth metals; Q=S, Se, Te） family, has been synthesized by conventional high-temperature solid-state reaction. It crystallizes in the trigonal space group of R3（No. 148） with a=b=21.4634（6） , c=8.3653（5） , V=3337.4（2） 3, Z=3, Mr=2738.41, Dc=4.088 g/cm3, μ=12.977 mm（-1）, F（000）=3576, the final R=0.0208 and w R=0.0505 with I 〉 2σ（I）, 3.28〈θ〈27.49°, w=1/[σ2（Fo2） ＋（0.0253P）2 ＋ 0.0000P], where P =（Fo2 ＋ 2Fc2）/3, S=1.051,（Δρ）max=0.639 and（Δρ）min=–1.195 e/3. The structure is constructed by discrete [BS3]（3–） trigonal planes and isolated [SnS6]（8–） octahedra with Ba（2＋） cations filled among them. The IR spectrum indicates the presence of lighter element boron. Its optical band gap shown by the UV-Vis-near-IR spectrum is about 2.69 e V, which agrees well with the electronic structure calculation.展开更多
基金Supported by the Scientific Research Deanship of University of Dammam under Grant No 2014264
文摘A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.
基金supported by the National Natural Science Foundation of China(21233009,21225104,91422303,21301175 and 21171168)
文摘A new zero-dimensional（0D） thioborate compound Ba（13）（BS3）6（SnS6）, the first one in the AE/B/Sn/Q（AE=alkali-earth metals; Q=S, Se, Te） family, has been synthesized by conventional high-temperature solid-state reaction. It crystallizes in the trigonal space group of R3（No. 148） with a=b=21.4634（6） , c=8.3653（5） , V=3337.4（2） 3, Z=3, Mr=2738.41, Dc=4.088 g/cm3, μ=12.977 mm（-1）, F（000）=3576, the final R=0.0208 and w R=0.0505 with I 〉 2σ（I）, 3.28〈θ〈27.49°, w=1/[σ2（Fo2） ＋（0.0253P）2 ＋ 0.0000P], where P =（Fo2 ＋ 2Fc2）/3, S=1.051,（Δρ）max=0.639 and（Δρ）min=–1.195 e/3. The structure is constructed by discrete [BS3]（3–） trigonal planes and isolated [SnS6]（8–） octahedra with Ba（2＋） cations filled among them. The IR spectrum indicates the presence of lighter element boron. Its optical band gap shown by the UV-Vis-near-IR spectrum is about 2.69 e V, which agrees well with the electronic structure calculation.
