A polycrystalline dense Ti3SiC2 based ceramic material has been produced by several techniques. The effect of addition of TiC and SiC is also studied. The Ti3SiC2 material shows extraordinary electrical, thermal and m...A polycrystalline dense Ti3SiC2 based ceramic material has been produced by several techniques. The effect of addition of TiC and SiC is also studied. The Ti3SiC2 material shows extraordinary electrical, thermal and mechanical properties. Furthermore, it shows a damage tolerance capability and oxidation resistance. In this work, we have synthesized Ti3SiC2 by electro-thermal explosion chemical reaction (ETE) with high current density (900 Amperes/a.u) followed by uniaxial pressure. The structural properties of the as-prepared materials are studied by x-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive x-ray spectroscopy (EDX) techniques. The chemical cartography, imaging and electronic properties are investigated using Ultra-STEM and electron high energy loss resolution spectroscopy (EELS) techniques, respectively. The surface of Ti3SiC2 is characterized by means of X-ray photoelectron spectroscopy (XPS). High resolution C 1s, Si 2p, Ti 2p, Ti 3s core level spectra are explained in terms of crystallographic and electronic structure. Valence band spectrum is performed to confirm the validity of the theoretical calculations.展开更多
文摘A polycrystalline dense Ti3SiC2 based ceramic material has been produced by several techniques. The effect of addition of TiC and SiC is also studied. The Ti3SiC2 material shows extraordinary electrical, thermal and mechanical properties. Furthermore, it shows a damage tolerance capability and oxidation resistance. In this work, we have synthesized Ti3SiC2 by electro-thermal explosion chemical reaction (ETE) with high current density (900 Amperes/a.u) followed by uniaxial pressure. The structural properties of the as-prepared materials are studied by x-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive x-ray spectroscopy (EDX) techniques. The chemical cartography, imaging and electronic properties are investigated using Ultra-STEM and electron high energy loss resolution spectroscopy (EELS) techniques, respectively. The surface of Ti3SiC2 is characterized by means of X-ray photoelectron spectroscopy (XPS). High resolution C 1s, Si 2p, Ti 2p, Ti 3s core level spectra are explained in terms of crystallographic and electronic structure. Valence band spectrum is performed to confirm the validity of the theoretical calculations.
