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Effect of boron doping on waterproof and dielectric properties of polyborosiloxane coating on SiO2f/SiO2 composites 被引量:7
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作者 Long XIA Siru LU +7 位作者 Bo ZHONG Longnan HUANG Hua YANG Tao ZHANG Haibo HAN Pan WANG Li XIONG Guangwu WEN 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2019年第8期2017-2027,共11页
A hydrophobic coating of the silica fiber reinforced silica composites(SiO2f/SiO2) was synthesized by sol-gel method using methyltriethoxy-silane(MTES) and boric acid(B(OH)3) as raw materials. The relationship among b... A hydrophobic coating of the silica fiber reinforced silica composites(SiO2f/SiO2) was synthesized by sol-gel method using methyltriethoxy-silane(MTES) and boric acid(B(OH)3) as raw materials. The relationship among boron doping, chemical structure of precursors and durability of hydrophobic coatings was discussed. The Si-O-B and methyl groups were successfully introduced in the gel precursors according to the FT-IR and XPS results. The resins were filled in the internal and surface holes of the SiO2f/SiO2 composites partially or completely, which is beneficial to reduce the physical adsorption of the moisture. In addition, hydroxyl groups of the SiO2f/SiO2 composites reacted with the resins and hydrophobic methyl groups were introduced, leading to the reduction of the chemical adsorption of water. Also, the boron doping was beneficial to enhancing the physical cross-linking between the coating and the SiO2f/SiO2 composites, and improved the adhesion of the coating to the substrate. The results show that the optimal hydrophobic coating with contact angle 130.33°, moisture absorption 0.33% and adhesion level 1 is obtained when the molar ratio of MTES to B(OH)3 is 10:4. The real permittivity of M10B4 is constant in the range of 2.32–2.51 and the dielectric tangent loss is constant in the range of 5.5 × 10-4–8.7 × 10-3. The hydrophobic coating has excellent dielectric properties. 展开更多
关键词 ADHEsioN dielectric HYDROPHOBIC Polyborosiloxane sio2f/sio2 COMPOSITES
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Low Temperature Sintering and Dielectric Properties of Ca- Ba-Al-B-Si-O Glass/Al_2 O_3 Composites for LTCC Applications 被引量:1
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作者 LIU Ming ZHOU Hongqing +2 位作者 ZHU Haikui YUE Zhenxing ZHAO Jianxin 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2013年第6期1085-1090,共6页
The effects of various SiO2 contents on both the microstructures and properties of Ca-Ba- A1-B-Si-O glass/Al2O3 cotrtposites were investigated by FTIR, DSC, XRD and SEM. The experimental results show that increasing S... The effects of various SiO2 contents on both the microstructures and properties of Ca-Ba- A1-B-Si-O glass/Al2O3 cotrtposites were investigated by FTIR, DSC, XRD and SEM. The experimental results show that increasing SiO2 content in the glass leads to the increase of [SIO4] units, increases the continuity of glass network, and decreases the trend to crystallization of composites. The shrinkage of samples rises rapid around the glass softening temperature and the final shrinkage of samples decreases with increasing SiO2 content in the glass. Borosilicate glass/Al2O3 composites with 60wt% SiO2 sintered at 875 ℃ for 15 min show better properties: a bulk density of 3.10 g,cm-3, a porosity of 0.23 %, a er value of 7.55 and a tan 8 value of 0.00053 (measured at 10 MHz) and a well matching with Ag electrodes. 展开更多
关键词 borosilicate glass sio2 CASTING FTIR microstructure dielectric properties
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低温光CVD-SiO_2及SiN薄膜的研究
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作者 孙建诚 《半导体技术》 CAS CSCD 北大核心 1989年第2期7-14,共8页
本文介绍了在低温(50~200℃)条件下,用光CVD技术制备SiO_2及SiN薄膜的工艺方法.讨论了某些工艺参数与薄膜性质的一些关系,并对光CVD-SiO_2及SiN薄膜的物理性质和电气性质进行了全面的分析.结果表明,这种低温光CVD薄膜在半导体器件工艺... 本文介绍了在低温(50~200℃)条件下,用光CVD技术制备SiO_2及SiN薄膜的工艺方法.讨论了某些工艺参数与薄膜性质的一些关系,并对光CVD-SiO_2及SiN薄膜的物理性质和电气性质进行了全面的分析.结果表明,这种低温光CVD薄膜在半导体器件工艺中将有广泛的应用. 展开更多
关键词 低温 光CVD sio2薄膜 sin薄膜
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退火工艺对SiN膜及SiO_2/SiN双层膜钝化特性的影响
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作者 章曙东 周国华 +2 位作者 张光春 施正荣 朱拓 《江南大学学报(自然科学版)》 CAS 2008年第2期183-186,共4页
针对硅太阳电池的背表面钝化,研究了在多晶硅P型衬底上SiN膜及SiO2/SiN双层膜的热稳定性及在不同温度下两种膜的退火特性.通过准稳态光电导衰减法测试其少数载流子寿命,发现SiN膜比较适合于在500℃以内的温度下进行常规炉热退火,而... 针对硅太阳电池的背表面钝化,研究了在多晶硅P型衬底上SiN膜及SiO2/SiN双层膜的热稳定性及在不同温度下两种膜的退火特性.通过准稳态光电导衰减法测试其少数载流子寿命,发现SiN膜比较适合于在500℃以内的温度下进行常规炉热退火,而SiO2/SiN双层膜则比较适合在600—700℃之间的温度下进行常规炉热退火.对SiN膜进行链式炉热退火实验表明,低温(700—850℃)条件下表面钝化效果最好. 展开更多
关键词 背面钝化 sin sio2/sin双层膜 退火
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PECVD Sin/SiO_2双层膜的应力特性
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作者 杨绪华 孙青 《微电子学与计算机》 CSCD 北大核心 1989年第4期9-11,共3页
采用激光束偏转法研究PECVD SiN及SiO_2的应力特性,结果表明,SiN膜的应力较大,在SiN/Si间插入一层SiO_2膜,能有效地减小SiN膜的应力。
关键词 sin sio2 应力特性 PECVD法
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B_2O_3-P_2O_5-SiO_2系陶瓷的相组成和介电性能
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作者 吴坚强 宁武成 +1 位作者 胡伯文 王群 《中国陶瓷》 CAS CSCD 2003年第3期29-31,共3页
讨论B2O3-P2O5-SiO2系低温共烧陶瓷的研究过程。该陶瓷用正交实验设计法安排试验,用单因素法设计陶瓷添加剂试验,用XRD分析其物相组成。从而获得了介电常数为4.1、介电损耗为5.0×10-4的低温共烧陶瓷。结果表明,该瓷料能满足1060℃... 讨论B2O3-P2O5-SiO2系低温共烧陶瓷的研究过程。该陶瓷用正交实验设计法安排试验,用单因素法设计陶瓷添加剂试验,用XRD分析其物相组成。从而获得了介电常数为4.1、介电损耗为5.0×10-4的低温共烧陶瓷。结果表明,该瓷料能满足1060℃共烧低介陶瓷的要求。 展开更多
关键词 介电性能 低温共烧陶瓷 B2O3-P2O5-sio2
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SiO2/聚酰胺酰亚胺纳米复合材料的介电与热性能 被引量:2
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作者 杨书宇 范勇 +2 位作者 陈昊 杨瑞宵 郭佳 《哈尔滨理工大学学报》 CAS 北大核心 2019年第3期123-129,共7页
采用微乳化-相转变法制备纳米SiO2分散液,与聚酰胺酰亚胺树脂机械共混并流延成膜,制成不同纳米含量的复合材料。采用透射电子显微镜(TEM)和傅里叶变换红外光谱(FTIR)对材料进行表征,按照IEC60343的标准测试了材料的耐电晕寿命和其它介... 采用微乳化-相转变法制备纳米SiO2分散液,与聚酰胺酰亚胺树脂机械共混并流延成膜,制成不同纳米含量的复合材料。采用透射电子显微镜(TEM)和傅里叶变换红外光谱(FTIR)对材料进行表征,按照IEC60343的标准测试了材料的耐电晕寿命和其它介电性能,并进行了热重分析。结果表明,纳米粒子在PAI基体中分散均匀且反应完全;加入纳米粒子提高了材料的热稳定性;随纳米粒子含量的增加,电导率、介电常数和介质损耗均发生有规律的变化,PAI复合材料的耐电晕寿命随SiO2含量的增加而增加,纳米粒子含量达到20%时,耐电晕寿命为17.35 h,是纯PAI材料的8倍以上;击穿强度随纳米粒子含量的增加而减小。 展开更多
关键词 聚酰胺酰亚胺 纳米sio2 介电性能 热性能
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SiO2碳热还原法制备Si3N4/SiC的固相反应机理
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作者 刘雁 潘伟 《材料导报》 EI CAS CSCD 北大核心 2000年第Z10期245-247,共3页
SiO2/C体系在氮气气氛下1573~1973K温度范围内反应所得的产物为α、β-SiC。高的反应温度、高的升温速率以及原料碳的过量均有利于SiC的生成。反应过程可分为三个阶段,产物分别为SiO气体,Si3N4和Si... SiO2/C体系在氮气气氛下1573~1973K温度范围内反应所得的产物为α、β-SiC。高的反应温度、高的升温速率以及原料碳的过量均有利于SiC的生成。反应过程可分为三个阶段,产物分别为SiO气体,Si3N4和SiC,表现活化能分别为470kJ/mol,467kJ/mol和484kJ/mol。以非等温热重分析为主要实验方法,对SiO2/C体系在流动的氮气中的反应机理进行了研究,探讨了体系固相反应所经历的步骤,确定了控速环节和动力学参数。 展开更多
关键词 sio2 碳热还原 固相反应 sin4 SIC 复合材料
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恒压应力下超薄Si_3N_4/SiO_2叠层栅介质与SiO_2栅介质寿命比较
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作者 林钢 徐秋霞 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第12期1717-1721,共5页
以等效氧化层厚度 (EOT)同为 2 .1nm的纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质为例 ,给出了恒定电压应力下超薄栅介质寿命预测的一般方法 ,并在此基础上比较了纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质在恒压应力下的寿命 .结... 以等效氧化层厚度 (EOT)同为 2 .1nm的纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质为例 ,给出了恒定电压应力下超薄栅介质寿命预测的一般方法 ,并在此基础上比较了纯 Si O2 栅介质和 Si3N4 / Si O2 叠层栅介质在恒压应力下的寿命 .结果表明 ,Si3N4 / Si O2 叠层栅介质比同样 EOT的纯 Si O2 栅介质有更长的寿命 ,这说明 Si3N4 / Si O2 叠层栅介质有更高的可靠性 . 展开更多
关键词 恒压应力 超薄Si3N4/sio2 叠层栅介质 超薄sio2栅介质 栅介质寿命预测
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超薄Si_3N_4/SiO_2(N/O)stack栅介质及器件
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作者 林钢 徐秋霞 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期115-119,共5页
成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ,并对其性质进行了研究 .结果表明 ,同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ,前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都... 成功制备了EOT(equivalentoxidethickness)为 2 1nm的Si3 N4/SiO2 (N/O)stack栅介质 ,并对其性质进行了研究 .结果表明 ,同样EOT的Si3 N4/SiO2 stack栅介质和纯SiO2 栅介质比较 ,前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者 .在此基础上 ,采用Si3 N4/SiO2 stack栅介质制备出性能优良的栅长为 0 12 μm的CMOS器件 ,器件很好地抑制了短沟道效应 .在Vds=Vgs=± 1 5V下 ,nMOSFET和pMOSFET对应的饱和电流Ion分别为5 84 3μA/ μm和 - 2 81 3μA/ μm ,对应Ioff分别是 8 3nA/ μm和 - 1 3nA/ μm . 展开更多
关键词 超薄Si3N4/sio2(N/O)stack栅介质 栅隧穿漏电流 SILC特性 栅介质寿命 CMOS器件
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Preparation of Porous Silica Ceramics with Low Dielectric Constant 被引量:1
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作者 MAO Xiao-jian WANG Shi-wei SHIMAI Shun-zo 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2006年第B12期239-243,共5页
Porous silica ceramics has been prepared with the starch consolidation casting method. Slurries with various fractions of starch added in were prepared by ball-milling. The evaluation of the microstructures was done t... Porous silica ceramics has been prepared with the starch consolidation casting method. Slurries with various fractions of starch added in were prepared by ball-milling. The evaluation of the microstructures was done through two techniques: Hg porosimetry and SEM investigation. The bending strength of the sintered samples varied within the range of 10 MPa-20 MPa and the low dielectric constant within the range of 2.0-2.4 correspondent with the porosity of 42%-56%. The ceramics holds a brilliant promise of being a kind of core material used in sandwich-like electromagnetic windows. 展开更多
关键词 porous ceramics sio2 starch consolidation casting bending strength dielectric properties
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Mechanical properties and in situ fracture behavior of SiO_(2f)/phosphate geopolymer composites 被引量:1
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作者 Chang-Qing Yu You-Ran Yu +4 位作者 Ying-Min Zhao Pei-Gang He Chang-Shou Xu Shuai Fu Zhi-Hua Yang 《Rare Metals》 SCIE EI CAS CSCD 2020年第5期562-569,共8页
Geopolymers,such as phosphate-based geopolymer,are promising materials that have drawn extensive attentions as wave-transparent candidates with low dielectric loss factor.In this paper,multilayer SiO2fibers are introd... Geopolymers,such as phosphate-based geopolymer,are promising materials that have drawn extensive attentions as wave-transparent candidates with low dielectric loss factor.In this paper,multilayer SiO2fibers are introduced into phosphate-based geopolymer matrix to prepare composites.Crack generation and fracture behaviors during the three-point bending tests in as-prepared SiO2f/phosphate geopolymer composites are clarified by in situ observation Before high-temperature treatment,composite with 17 vol%fiber content exhibits the best mechanical properties.A decreasing mechanical strength is observed after being treated at higher temperature,which is attributed to the stronger interface binging between fibers and phosphatebased geopolymer matrix.Most importantly,the presence of SiO2fibers can strengthen mechanical properties of phosphate-based geopolymer matrix but shows negligible impact on its dielectric properties,achieving dielectric loss factor as low as 3.53910-3after being treated at 700°C. 展开更多
关键词 Phosphate-based geopolymer sio2 fibber In situ observation Fracture behavior dielectric properties
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Dual-band LTCC antenna based on 0.95Zn_2SiO_4-0.05CaTiO_3 ceramics for GPS/UMTS applications
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作者 窦刚 李玉霞 郭梅 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第10期572-575,共4页
In this paper, we present a compact low-temperature co-fired ceramic(LTCC) dual-band antenna by using the electromagnetic coupling effect concept for global positioning system(GPS) and universal mobile telecommuni... In this paper, we present a compact low-temperature co-fired ceramic(LTCC) dual-band antenna by using the electromagnetic coupling effect concept for global positioning system(GPS) and universal mobile telecommunication system(UMTS) applications. The overall dimension of the antenna is 8.6 mm × 13.0 mm × 1.1 mm. It consists of double meander lines and a via hole line. The top meander line operates at the upper band, and the bottom radiating patch is designed for the lower band. The via-hole line is employed to connect the double meander lines. Because of the effect of the coupled line,total dimension of the proposed antenna is greatly reduced. With the 2.5: voltage standing wave ratio(VSWR) impedance bandwidth definition, the lower and upper bands have the bandwidths of 110 MHz and 150 MHz, respectively. The proposed antenna is successfully designed, simulated, and analyzed by a high frequency structure simulator(HFSS). And the antenna is manufactured by using the 0.95Zn2SiO4-0.05 CaTiO3ceramics(εr = 7.1, tanδ = 0.00038) that is prepared by ourselves. The results show that the antenna is compact, efficient, and of near omnidirectional radiation pattern. 展开更多
关键词 low-temperature co-fired ceramic compact antenna microwave dielectric Zn2sio4-CaTiO3
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Multiscale analysis of single- and multiple-pulse laser-induced damages in HfO_2/SiO_2 multilayer dielectric films at 532 nm 被引量:1
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作者 刘文文 魏朝阳 +1 位作者 易葵 邵建达 《Chinese Optics Letters》 SCIE EI CAS CSCD 2015年第9期53-57,共5页
Nanosecond single- and multiple-pulse laser damage studies on HfOffSiO2 high-reflection (HR) coatings are performed at 532 nm. For single-pulse irradiation, the damage is attributed to the defects and the electric i... Nanosecond single- and multiple-pulse laser damage studies on HfOffSiO2 high-reflection (HR) coatings are performed at 532 nm. For single-pulse irradiation, the damage is attributed to the defects and the electric intensity distribution in the multilayer thin films. When the defect density in the irradiated area is high, delami- nation is observed. Other than the 1064 nm laser damage, the plasma scalding of the 532 nm laser damage is not pits-centered for normal incidence, and the size of the plasma scalding has no relation to the defect density and position, but increases with the laser fluence. For multiple-pulse irradiations, some damage sites show deeper precursors than those from the single-shot irradiation due to the accumulation effects. The cumulative laser- induced damages behave as pits without the presence of plasma scalding, which is unaffected by the laser fluence and shot numbers. The damage morphologies and depth information both confirm the fatigue effect of a HfO2/SiO2 HR coating under 532 nm laser irradiation. 展开更多
关键词 Multiscale analysis of single and multiple-pulse laser-induced damages in HfO2/sio2 multilayer dielectric films at 532 nm
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Microwave dielectric properties of Ca0.7Nd0.2TiO3 ceramic-filled CaO–B2O3–SiO2 glass for LTCC applications 被引量:7
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作者 Hsing-I HSIANG Chih-Cheng CHEN Sue-Yu YANG 《Journal of Advanced Ceramics》 SCIE CSCD 2019年第3期345-351,共7页
The effects of the Ca0.7Nd0.2Ti O3 ceramic addition on the crystallization,densification,and dielectric properties of CaO–B2O3–SiO2–(Al2O3)glass(C1:CaO–B2O3–SiO2 glass and C1A03:CaO–B2O3–SiO2–Al2O3 glass)for l... The effects of the Ca0.7Nd0.2Ti O3 ceramic addition on the crystallization,densification,and dielectric properties of CaO–B2O3–SiO2–(Al2O3)glass(C1:CaO–B2O3–SiO2 glass and C1A03:CaO–B2O3–SiO2–Al2O3 glass)for low-temperature co-fired ceramic(LTCC)applications are investigated.The cristobalite phase crystallized from C1 glass was inhibited by adding Al2O3.During sintering,Ca0.7Nd0.2TiO3 ceramic reacted with CaO–B2O3–SiO2–(Al2O3)glass to form the sphene(CaTiSiO5)phase.The amount of sphene phase increases with increasing sintering temperature.By adding 50–60 wt%C1 or C1A03 glass,Ca0.7Nd0.2TiO3 can be densified at 850–900℃.The relative dielectric constants for Ca0.7Nd0.2TiO3 added with C1 and C1A03 glasses were all 20–23.Ca0.7Nd0.2TiO3 added with C1 glass exhibited a lower dielectric constant than C1A03 glass due to cristobalite phase formation.For Ca0.7Nd0.2TiO3 ceramics added with 50 wt%glass,the variation in Q×f value presented the same trend as the sphene formation amount variation.The best Q×f value of 2380 GHz was achieved for Ca0.7Nd0.2TiO3 ceramics added with 50 wt%C1A03 glass sintered at 900℃due to the dense structure and greater amount of sphene.Ca0.7Nd0.2TiO3 ceramics added with50 wt%C1A03 glass sintered at 900℃exhibited a dielectric constant of 22.8 and Q×f value of2380 GHz,which are suitable for microwave LTCC applications. 展开更多
关键词 low-temperature co-fired ceramic(LTCC) Ca0.7Nd0.2TiO3 ceramics microwave dielectric property CaO–B2O3–sio2 GLASS
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超细钛酸钡的表面改性 被引量:16
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作者 崔爱莉 陈仁政 +1 位作者 尉京志 李龙土 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2001年第12期2065-2067,共3页
利用 Sol-gel法成功地在超细钛酸钡粉体表面包覆了厚度约 5 nm的均匀 Si O2 膜 .采用 HRTEM,XPS和 XRD等多种分析方法 ,证实了 Si O2 薄膜的存在 .并首次提出钛酸钡水解后水玻璃在 Ti O2 - x表面溶胶 -凝胶化的包覆机理 .改性后的钛酸... 利用 Sol-gel法成功地在超细钛酸钡粉体表面包覆了厚度约 5 nm的均匀 Si O2 膜 .采用 HRTEM,XPS和 XRD等多种分析方法 ,证实了 Si O2 薄膜的存在 .并首次提出钛酸钡水解后水玻璃在 Ti O2 - x表面溶胶 -凝胶化的包覆机理 .改性后的钛酸钡与纯钛酸钡相比 ,Si O2 包覆可促进烧结 ,包覆 Si O2 坯体在 1 1 90℃达到最大收缩速率 ,而纯钛酸钡坯体达到最大收缩速率的温度为 1 2 60℃ .坯体的收缩率由未包覆前的 -1 5 %变化到 -1 9.3% .包覆工艺改善了介电性能 ,使介温曲线平坦 。 展开更多
关键词 表面包覆 sio2 BATIO3 介电性能 钛酸钡 表面改性 二氧化硅 陶瓷 陶瓷电容器
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多孔二氧化硅玻璃的有效介电函数 被引量:2
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作者 彭其 屠长存 +3 位作者 戴松涛 许伯章 张存洲 张光寅 《光谱学与光谱分析》 SCIE EI CAS CSCD 北大核心 2000年第1期1-4,共4页
本文研究了具有 7 5nm孔隙的多孔二氧化硅玻璃的介电函数与孔隙度的关系 ,通过实验检验 ,选出了公式lnεe=θ1lnε1+θ2 lnε2 (其中θ1,θ2 分别为两组分的孔隙度 )能较好描述其介电性质 ,对光谱选择性材料的设计具有参考价值。
关键词 多孔玻璃 介电函数 二氧化硅玻璃 光学性质
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纳米二氧化硅/超支化聚硅氧烷/氰酸酯树脂复合材料的性能研究 被引量:3
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作者 张梦萌 颜红侠 +1 位作者 管兴华 王倩倩 《塑料工业》 CAS CSCD 北大核心 2013年第6期67-70,共4页
采用硅烷偶联剂表面处理过的纳米二氧化硅(nano-SiO2)作为填料改性超支化聚硅氧烷/氰酸酯(HBPSi/CE)树脂体系。结果表明:适量的nano-SiO2既可同时提高HBPSi/CE树脂的韧性和强度,又可改善其耐水性能;当nano-SiO2质量分数为3.0%时,nano-Si... 采用硅烷偶联剂表面处理过的纳米二氧化硅(nano-SiO2)作为填料改性超支化聚硅氧烷/氰酸酯(HBPSi/CE)树脂体系。结果表明:适量的nano-SiO2既可同时提高HBPSi/CE树脂的韧性和强度,又可改善其耐水性能;当nano-SiO2质量分数为3.0%时,nano-SiO2/HBPSi/CE体系的冲击强度(14.1 kJ/m2)和弯曲强度(118.4 MPa)分别比HBPSi/CE树脂提高了26%和12%,其吸水率低于HBPSi/CE树脂,介电常数略高于HBPSi/CE树脂,介电损耗角正切与HBPSi/CE树脂相当。 展开更多
关键词 纳米二氧化硅 超支化聚硅氧烷 氰酸酯 力学性能 介电性能 吸水率
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一种采用微小通孔的双层布线技术
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作者 杨国渝 伍乾永 陈鹏 《微电子学》 CAS CSCD 北大核心 2001年第1期46-48,共3页
文中介绍了分别采用聚酰亚胺和 CVD Si O2 作层间介质 ,进行 2 μm× 2 μm通孔的刻蚀和铝双层布线 ,其成品率均可达到 1 0 0 % ,介质对一次铝的覆盖完整率可达 95%以上 ,层间绝缘电压大于 2 50
关键词 集成电路 双层布线 聚酰亚胺 层间介质 微小通孔 二氧化硅
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Effect of re-oxidation annealing process on the SiO_2/SiC interface characteristics 被引量:1
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作者 闫宏丽 贾仁需 +2 位作者 汤晓燕 宋庆文 张玉明 《Journal of Semiconductors》 EI CAS CSCD 2014年第6期128-131,共4页
The effect of the different re-oxidation annealing (ROA) processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric c... The effect of the different re-oxidation annealing (ROA) processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. 展开更多
关键词 sio2/SiC re-oxidation annealing effective dielectric charge interface trap
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