为研究真空等离子喷涂Si/Yb_(2)Si_(2)O_(7)/Yb_(2)SiO_(5)环境障涂层试样在涂层受压、涂层受拉时的室温弯曲强度及失效原因,采用超景深三维显微镜、SEM(Scanning Electron Microscope)等方法对喷涂后的试样进行了表征,并测量了涂层孔隙...为研究真空等离子喷涂Si/Yb_(2)Si_(2)O_(7)/Yb_(2)SiO_(5)环境障涂层试样在涂层受压、涂层受拉时的室温弯曲强度及失效原因,采用超景深三维显微镜、SEM(Scanning Electron Microscope)等方法对喷涂后的试样进行了表征,并测量了涂层孔隙率;采用拉伸法测试了涂层的结合强度,并采用三点弯曲试验测试了裸材、涂层受压和涂层受拉时的室温弯曲强度。结果表明:Si/Yb_(2)Si_(2)O_(7)/Yb_(2)SiO_(5)涂层与SiC_(f)/SiC复合材料的结合强度为10.13 MPa,拉伸断裂主要在复材表层发生。计算涂层厚度时,涂层受压样的弯曲强度(503.21 MPa)与裸材(506.79 MPa)基本一致;不计算涂层厚度时,涂层受拉样的弯曲强度(499.77 MPa)与裸材一致;EBC涂层整体具有一定的压缩强度,其整体抗拉强度比复材自身抗拉强度小很多。压涂层时,在载荷增加至接近最大载荷时,复材层间发生破坏,并逐步失效,随后涂层发生飞崩,载荷迅速下降,试验停止;拉涂层时,在载荷很小时(约64 N)涂层就被拉开,随着载荷增加,直至接近最大载荷时,层间发生破坏并逐步失效。弯曲试验时复材的主要失效模式是SiC纤维断裂、复材的SiC基体开裂和复材层间撕裂,复材受拉面产生复材厚度方向的纵向裂纹;复材表层沉积的SiC膜层失效模式主要是开裂和剥落;EBC涂层在受压时的主要失效模式是整体飞崩和开裂,在受拉时,涂层在最大应力处断裂为2部分。本研究对含EBC涂层的SiC_(f)/SiC复材的最大弯曲载荷设计具有参考意义.展开更多
The correlation between surface complexation at the SiO_(2)H_(2)O interface and quartz notation behavior was studied.Computer assisted calculations,using the programs SOLGASWATER,were adapted in order to con-struct di...The correlation between surface complexation at the SiO_(2)H_(2)O interface and quartz notation behavior was studied.Computer assisted calculations,using the programs SOLGASWATER,were adapted in order to con-struct distribution diagrams of surface speciation in the SiO_(2)-metal ion-H^(+) system in aqueous solutions.Equilib-rium constants for both surface and solution reactions were introduced in the composition matrix.Surface complexation,surface charge as well as notation results were compared and a good agreement was obtained.Furthermore,flotation mechanisms of quartz activation by common metal ions like Ca^(2+),Mg^(2+),Fe^(2+) are quantitatively discussed based on the surface reaction equilibrium constants.展开更多
The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage curr...The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.展开更多
文摘The correlation between surface complexation at the SiO_(2)H_(2)O interface and quartz notation behavior was studied.Computer assisted calculations,using the programs SOLGASWATER,were adapted in order to con-struct distribution diagrams of surface speciation in the SiO_(2)-metal ion-H^(+) system in aqueous solutions.Equilib-rium constants for both surface and solution reactions were introduced in the composition matrix.Surface complexation,surface charge as well as notation results were compared and a good agreement was obtained.Furthermore,flotation mechanisms of quartz activation by common metal ions like Ca^(2+),Mg^(2+),Fe^(2+) are quantitatively discussed based on the surface reaction equilibrium constants.
基金the General Program of the National Natural Science Foundation of China(Grant No.61974159)the Youth Innovation Promotion Association of the Chinese Academy of Sciences and Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20200039)。
文摘The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this paper.The results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely correlated.Specifically,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality improvement.Moreover,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.
