The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties ...The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.展开更多
With its unique features, photoconductive semiconductor switch (PCSS) is generally recognized today as a promising power electronic device. However, a major limitation of PCSS is its surprisingly low voltage threshold...With its unique features, photoconductive semiconductor switch (PCSS) is generally recognized today as a promising power electronic device. However, a major limitation of PCSS is its surprisingly low voltage threshold of surface flashover (SF). In this paper, an experimental study of surface flashover of a back-triggered PCSS is presented. The PCSSs with electrode gap of 18 mm are fabricated from liquid encapsulated czochralski (LEC) semi-insulating gallium arsenide (SI-GaAs), and they are either un-coated, or partly coated, or en- tirely coated PCSSs with high-strength transparent insulation. The SF fields of the PCSSs are measured and discussed. According to the experimental results, the high-dielectric-strength coating is efficient in both reducing the gas desorption from semiconductor and increasing the SF field: a well-designed PCSS can resist a voltage up to 20 kV under the repetition frequency of 30 Hz. The physical mechanism of the PCSS SF is analyzed, and the conclusion is made that having a channel structure, the SF is the breakdown of the contaminated dielectric layer at the semiconductor-ambient dielectric interface. The non-uniform distribution of the surface field and the gas desorption due to thermal effects of semiconductor surface currents are key factors causing the SF field reduction.展开更多
Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage...Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p-^＋-Si devices may be a potential and multilevel candidate for nonvolatile memory application.展开更多
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.
基金Project supported by National Natural Science Foundation of China （50837005, 5110 7099）, Foundation of the State Key Laboratory of Electrical Insulation for Power Equip- ment （EIPE09203）.
文摘With its unique features, photoconductive semiconductor switch (PCSS) is generally recognized today as a promising power electronic device. However, a major limitation of PCSS is its surprisingly low voltage threshold of surface flashover (SF). In this paper, an experimental study of surface flashover of a back-triggered PCSS is presented. The PCSSs with electrode gap of 18 mm are fabricated from liquid encapsulated czochralski (LEC) semi-insulating gallium arsenide (SI-GaAs), and they are either un-coated, or partly coated, or en- tirely coated PCSSs with high-strength transparent insulation. The SF fields of the PCSSs are measured and discussed. According to the experimental results, the high-dielectric-strength coating is efficient in both reducing the gas desorption from semiconductor and increasing the SF field: a well-designed PCSS can resist a voltage up to 20 kV under the repetition frequency of 30 Hz. The physical mechanism of the PCSS SF is analyzed, and the conclusion is made that having a channel structure, the SF is the breakdown of the contaminated dielectric layer at the semiconductor-ambient dielectric interface. The non-uniform distribution of the surface field and the gas desorption due to thermal effects of semiconductor surface currents are key factors causing the SF field reduction.
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p-^＋-Si devices may be a potential and multilevel candidate for nonvolatile memory application.
