ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, t...ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.展开更多
得益于高效率优势,混合SiC/Si有源钳位(active neutral point clamped,ANPC)三电平电路拓扑在光储发电系统中应用广泛。但传统混合SiC/Si功率模块中,Si器件的使用限制了效率提升,SiC器件引入后又可能导致热分布不均、电压过冲及振荡等...得益于高效率优势,混合SiC/Si有源钳位(active neutral point clamped,ANPC)三电平电路拓扑在光储发电系统中应用广泛。但传统混合SiC/Si功率模块中,Si器件的使用限制了效率提升,SiC器件引入后又可能导致热分布不均、电压过冲及振荡等问题。提出了一种综合设计方法,结合功率器件损耗均衡与功率模块布局寄生电感优化,以提高混合SiC/Si ANPC电路拓扑的功率模块性能。建立了功率模块损耗模型,并进行热性能优化,降低结温与芯片温差;构建了寄生电感模型,通过优化设计减小寄生电感;研制了基于ANPC拓扑的混合SiC/Si功率模块,并开展电热性能测试。实验结果验证了功率模块在损耗、寄生电感及热分布方面的显著优势。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50472009, 10474091 and 50532070)
文摘ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.
文摘得益于高效率优势,混合SiC/Si有源钳位(active neutral point clamped,ANPC)三电平电路拓扑在光储发电系统中应用广泛。但传统混合SiC/Si功率模块中,Si器件的使用限制了效率提升,SiC器件引入后又可能导致热分布不均、电压过冲及振荡等问题。提出了一种综合设计方法,结合功率器件损耗均衡与功率模块布局寄生电感优化,以提高混合SiC/Si ANPC电路拓扑的功率模块性能。建立了功率模块损耗模型,并进行热性能优化,降低结温与芯片温差;构建了寄生电感模型,通过优化设计减小寄生电感;研制了基于ANPC拓扑的混合SiC/Si功率模块,并开展电热性能测试。实验结果验证了功率模块在损耗、寄生电感及热分布方面的显著优势。
