Si P微系统是一种高度集成化的系统,其内部可能集成1个或多个DSP、NOR Flash和DDR存储器、AI加速芯片等,有些复杂的微系统还集成了FPGA芯片。由于内部集成了多个微组件,芯片之间相互连接,传统的测试单一微组件的方法并不适用于微系统的...Si P微系统是一种高度集成化的系统,其内部可能集成1个或多个DSP、NOR Flash和DDR存储器、AI加速芯片等,有些复杂的微系统还集成了FPGA芯片。由于内部集成了多个微组件,芯片之间相互连接,传统的测试单一微组件的方法并不适用于微系统的测试。提出了一套DSP微组件测试方法,该系统包括1块专门的测试板、可调试的电脑测试环境和JTAG通信。与单一的DSP裸芯测试相比,它可以快速稳定地实现DSP微组件的性能测试,满足大批量生产测试的需求。展开更多
A method to improve Ge n＋/p junction diode performance by excimer laser annealing （ELA） and epitaxial Si passi- vation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin...A method to improve Ge n＋/p junction diode performance by excimer laser annealing （ELA） and epitaxial Si passi- vation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin the Fermi level of the contact of Al/n-Ge to some extent and reduce the contact resistance. In addition, the fabricated Ge n ：/p junction diode by ELA plus epitaxial Si passivation exhibits a decreased reverse current density and an increased forward current density, resulting in a rectification ratio of about 6.5 x 10^6 beyond two orders magnitude larger than that by ELA alone. The reduced specific contact resistivity of metal on n-doped germanium and well-behaved germanium n＋/p diode arc beneficial for the performance improvement of Ge n-MOSFETs and other opto-electronic devices.展开更多
To optimize the comprehensive properties of Ni−Si precipitation strengthened phosphor bronze,the impact of the Ni/Si mass ratio and heat treatment process on a Cu−8Sn−0.1P−1Ni−xSi alloy was explored.High resolution fi...To optimize the comprehensive properties of Ni−Si precipitation strengthened phosphor bronze,the impact of the Ni/Si mass ratio and heat treatment process on a Cu−8Sn−0.1P−1Ni−xSi alloy was explored.High resolution field emission scanning electron microscopy and transmission electron microscopy were used for microstructural characterization.The results indicate that the properties are influenced by the Ni/Si mass ratio,attributed to the formation of various second phases.Simultaneously,by influencing the diffusion rate,the microstructures and properties are influenced by the solid solution treatment.The strength is enhanced by precipitated nanoscale particles during the aging process by influencing the motion of dislocations.Ultimately,excellent comprehensive properties,including ultimate tensile strength,yield strength,and elongation of 866 MPa,772 MPa,and 8.7%,respectively,are obtained in the Cu−8Sn−0.1P−1Ni−0.227Si alloy.展开更多
Nickel phosphorous amorphous film catalyst was prepared by means of electrodeposition on p-type silicon. Effects of H3PO3 content in bath and current density on phosphorous content in the film were studied. With the i...Nickel phosphorous amorphous film catalyst was prepared by means of electrodeposition on p-type silicon. Effects of H3PO3 content in bath and current density on phosphorous content in the film were studied. With the increase of H3PO3 concentration and the decrease of current density, P content was increased remarkably, X-ray dtheaction (XRD) showed that the film containning x (molar fraction)=0.109 P is amorphous.Scanning electrouic microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) wereused to investigate the morphology of the film and the chemical state of Ni, P, O on thesurface.展开更多
The high-temperature deformation behavior of Cu-Ni-Si-P alloy was investigated by using the hot compression test in the temperature range of 600-800 ℃ and strain rate of 0.01-5 s-1. The hot deformation activation ene...The high-temperature deformation behavior of Cu-Ni-Si-P alloy was investigated by using the hot compression test in the temperature range of 600-800 ℃ and strain rate of 0.01-5 s-1. The hot deformation activation energy, Q, was calculated and the hot compression constitutive equation was established. The processing maps of the alloy were constructed based on the experiment data and the forging process parameters were then optimized based on the generated maps for forging process determination. The flow behavior and the microstructural mechanism of the alloy were studied. The flow stress of the Cu-Ni-Si-P alloy increases with increasing strain rate and decreasing deformation temperature, and the dynamic recrystallization temperature of alloy is around 700 ℃. The hot deformation activation energy for dynamic recrystallization is determined as 485.6 kJ/mol. The processing maps for the alloy obtained at strains of 0.3 and 0.5 were used to predict the instability regimes occurring at the strain rate more than 1 s-1 and low temperature （〈650 ℃）. The optimum range for the alloy hot deformation processing in the safe domain obtained from the processing map is 750-800 ℃ at the strain rate of 0.01-0.1 s i The characteristic microstructures predicted from the processing map agree well with the results of microstructural observations.展开更多
Tb3+ ions were incorporated in P Si matrix material through a sol gel process. Luminescence properties of Tb3+as a function of dopant, firing temperature, composition and structure of matrices were investigated. The g...Tb3+ ions were incorporated in P Si matrix material through a sol gel process. Luminescence properties of Tb3+as a function of dopant, firing temperature, composition and structure of matrices were investigated. The gels synthesized by the reaction of P2O5 or H3PO4 with tetraethoxy silane and TbCl3 as dopant were fired in air from the temperature 25～1000℃to form P Si crystalline phase. The crystal structure was determined by powder X ray diffraction. Si5O（PO4）6 were the only crystalline phase and belong to hexagonal crystal system. The emission of 5D4 7F5（～545nm） transition of Tb3+in the P Si system iscomposed of two peaks. The amount of doping Tb3+varied from 0.664%to 1.644%, and no obvious concentration quenching was observed in this doping concentration range. The intensity of Tb3+emission increased with firing temperatureincreasing and becomes stable at 800～1000℃.展开更多
基金Project supported by the High Level Talent Project of Xiamen University of Technology,China(Grant No.YKJ16012R)
文摘A method to improve Ge n＋/p junction diode performance by excimer laser annealing （ELA） and epitaxial Si passi- vation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin the Fermi level of the contact of Al/n-Ge to some extent and reduce the contact resistance. In addition, the fabricated Ge n ：/p junction diode by ELA plus epitaxial Si passivation exhibits a decreased reverse current density and an increased forward current density, resulting in a rectification ratio of about 6.5 x 10^6 beyond two orders magnitude larger than that by ELA alone. The reduced specific contact resistivity of metal on n-doped germanium and well-behaved germanium n＋/p diode arc beneficial for the performance improvement of Ge n-MOSFETs and other opto-electronic devices.
基金the support of the National Key Research and Development Program of China(No.2018YFE0306103)the National Natural Science Foundation of China(No.52071050)the Science and Technology Innovation Project of Ningbo,China(No.2021Z032).
文摘To optimize the comprehensive properties of Ni−Si precipitation strengthened phosphor bronze,the impact of the Ni/Si mass ratio and heat treatment process on a Cu−8Sn−0.1P−1Ni−xSi alloy was explored.High resolution field emission scanning electron microscopy and transmission electron microscopy were used for microstructural characterization.The results indicate that the properties are influenced by the Ni/Si mass ratio,attributed to the formation of various second phases.Simultaneously,by influencing the diffusion rate,the microstructures and properties are influenced by the solid solution treatment.The strength is enhanced by precipitated nanoscale particles during the aging process by influencing the motion of dislocations.Ultimately,excellent comprehensive properties,including ultimate tensile strength,yield strength,and elongation of 866 MPa,772 MPa,and 8.7%,respectively,are obtained in the Cu−8Sn−0.1P−1Ni−0.227Si alloy.
基金"863"Project(2012AA09A203)Nature Science Founding of Shandong Province(Q2008F12)Fundamental Research Funds for the Central Universities(11CX04032A,11CX06069A)
文摘Nickel phosphorous amorphous film catalyst was prepared by means of electrodeposition on p-type silicon. Effects of H3PO3 content in bath and current density on phosphorous content in the film were studied. With the increase of H3PO3 concentration and the decrease of current density, P content was increased remarkably, X-ray dtheaction (XRD) showed that the film containning x (molar fraction)=0.109 P is amorphous.Scanning electrouic microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) wereused to investigate the morphology of the film and the chemical state of Ni, P, O on thesurface.
基金Project(51101052) supported by the National Natural Science Foundation of China
文摘The high-temperature deformation behavior of Cu-Ni-Si-P alloy was investigated by using the hot compression test in the temperature range of 600-800 ℃ and strain rate of 0.01-5 s-1. The hot deformation activation energy, Q, was calculated and the hot compression constitutive equation was established. The processing maps of the alloy were constructed based on the experiment data and the forging process parameters were then optimized based on the generated maps for forging process determination. The flow behavior and the microstructural mechanism of the alloy were studied. The flow stress of the Cu-Ni-Si-P alloy increases with increasing strain rate and decreasing deformation temperature, and the dynamic recrystallization temperature of alloy is around 700 ℃. The hot deformation activation energy for dynamic recrystallization is determined as 485.6 kJ/mol. The processing maps for the alloy obtained at strains of 0.3 and 0.5 were used to predict the instability regimes occurring at the strain rate more than 1 s-1 and low temperature （〈650 ℃）. The optimum range for the alloy hot deformation processing in the safe domain obtained from the processing map is 750-800 ℃ at the strain rate of 0.01-0.1 s i The characteristic microstructures predicted from the processing map agree well with the results of microstructural observations.
文摘Tb3+ ions were incorporated in P Si matrix material through a sol gel process. Luminescence properties of Tb3+as a function of dopant, firing temperature, composition and structure of matrices were investigated. The gels synthesized by the reaction of P2O5 or H3PO4 with tetraethoxy silane and TbCl3 as dopant were fired in air from the temperature 25～1000℃to form P Si crystalline phase. The crystal structure was determined by powder X ray diffraction. Si5O（PO4）6 were the only crystalline phase and belong to hexagonal crystal system. The emission of 5D4 7F5（～545nm） transition of Tb3+in the P Si system iscomposed of two peaks. The amount of doping Tb3+varied from 0.664%to 1.644%, and no obvious concentration quenching was observed in this doping concentration range. The intensity of Tb3+emission increased with firing temperatureincreasing and becomes stable at 800～1000℃.
