This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_（4.4）Sb_3 Ge_xSn_3（x = 0–0.15）. The prepared samples...This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_（4.4）Sb_3 Ge_xSn_3（x = 0–0.15）. The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability.Compared with the polycrystalline Ge-substituted β-Zn_4Sb_3, the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10~4S·m^（-1） at room temperature for the x = 0.1 sample.The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10^（-3）W·m^（-1）·K^（-2） at 543 K.展开更多
Antimony tin oxide （ATO） nano-particles doped with different Sb contents were prepared by co-precipitation method, using SnCl4·5H2O and SbCl3 as main raw materials. Microstructure, morphology and reflectivity c...Antimony tin oxide （ATO） nano-particles doped with different Sb contents were prepared by co-precipitation method, using SnCl4·5H2O and SbCl3 as main raw materials. Microstructure, morphology and reflectivity curves were characterized by XRD, FESEM, UV-visible spectroscopy and laser, and the effects of Sb content on crystalline microstructure, crystal size and reflectivity curves of the ATO nano-particles were investigated systematically. The results show that the ATO nano-particles prepared by co-precipitation method have tetragonal rutile structure, with particle size distribution range of several decade nanometer. With the increase of Sb content, the grain size of ATO decreases, and the unit cell volume increases. Compared with the SnO2 particles without Sb, the 1.06 μm laser reflection of ATO nano-particles doped with Sb is obviously lower. With the increase of Sb content, the reflection increases first, then decreases;when the Sb content is 20%, 1.06μm laser reflection of ATO nano-particles is below 0.02%, and the laser reflection performance is the best.展开更多
为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻...为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51262032)
文摘This study prepares a group of single crystalline β-Zn_4Sb_3 with Ge and Sn codoped by the Sn-flux method according to the nominal stoichiometric ratios of Zn_（4.4）Sb_3 Ge_xSn_3（x = 0–0.15）. The prepared samples possess a metallic luster surface with perfect appearance and large crystal sizes. The microscopic cracks or defects are invisible in the samples from the back-scattered electron image. Except for the heavily Ge-doped sample of x = 0.15, all the samples are single phase with space group R3c. The thermal analysis results show that the samples doped with Ge exhibit an excellent thermal stability.Compared with the polycrystalline Ge-substituted β-Zn_4Sb_3, the present single crystals have higher carrier mobility, and hence the electrical conductivity is improved, which reaches 7.48×10~4S·m^（-1） at room temperature for the x = 0.1 sample.The change of Ge and Sn contents does not improve the Seebeck coefficient significantly. Benefiting from the increased electrical conductivity, the sample with x = 0.075 gets the highest power factor of 1.45×10^（-3）W·m^（-1）·K^（-2） at 543 K.
基金Project(10KJB430008)supported by the Natural Science Foundation of Colleges in Jiangsu Province,ChinaProjects(2013(CXZZ13_0421),2012(CXLX12_0425))supported by Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD),ChinaResearch and Innovation Program for College Graduates of Jiangsu Province,China
文摘Antimony tin oxide （ATO） nano-particles doped with different Sb contents were prepared by co-precipitation method, using SnCl4·5H2O and SbCl3 as main raw materials. Microstructure, morphology and reflectivity curves were characterized by XRD, FESEM, UV-visible spectroscopy and laser, and the effects of Sb content on crystalline microstructure, crystal size and reflectivity curves of the ATO nano-particles were investigated systematically. The results show that the ATO nano-particles prepared by co-precipitation method have tetragonal rutile structure, with particle size distribution range of several decade nanometer. With the increase of Sb content, the grain size of ATO decreases, and the unit cell volume increases. Compared with the SnO2 particles without Sb, the 1.06 μm laser reflection of ATO nano-particles doped with Sb is obviously lower. With the increase of Sb content, the reflection increases first, then decreases;when the Sb content is 20%, 1.06μm laser reflection of ATO nano-particles is below 0.02%, and the laser reflection performance is the best.
文摘为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。
