Tunable mid-infrared and far-infrared laser output was demonstrated based on BaGa_(4)Se_(7)crystals and an optical parametric oscillator(OPO).With a 1.06μm Nd:YAG laser and a double-pass singly resonant OPO cavity,a ...Tunable mid-infrared and far-infrared laser output was demonstrated based on BaGa_(4)Se_(7)crystals and an optical parametric oscillator(OPO).With a 1.06μm Nd:YAG laser and a double-pass singly resonant OPO cavity,a laser energy output of 2.2 mJ at 10μm was obtained.By tuning the angle and temperature,a tunable laser output covering the wavelength range from 6μm to 17μm was obtained with a tuning precision better than 3 nm.The corresponding optical-to-optical conversion efficiency was 2.8%,and the slope efficiency was 4.4%.The damage effect of the output laser on detectors was also investigated,and point damage to the detector occurred at an output energy of 16.4μJ.The laser system has the advantages of miniaturization,a wide tuning range,high energy and high tuning resolution.Its broadband laser characteristics make it highly valuable for applications in atmospheric detection,infrared spectroscopy and electro-optical countermeasures.展开更多
Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination...Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.展开更多
Van der Waals(vdW)ferroelectric-semiconductor heterojunction provides reconfigurable band alignment based on optical/electrical-assisted polarization switching,which shows great potential to construct artificial visua...Van der Waals(vdW)ferroelectric-semiconductor heterojunction provides reconfigurable band alignment based on optical/electrical-assisted polarization switching,which shows great potential to construct artificial visual neural systems.However,the mechanical exfoliation fabrication scheme for proof-of-concept demonstrations and fundamental studies is cumbersome and not scalable for practical application.Here,we present a synthetic strategy for the large-scale and high crystallinity growth of planar/verticalα-In_(2)Se_(3)/MoS_(2)heterojunctions by dynamically tuning the growth temperature.Furthermore,based on theα-In_(2)Se_(3)/MoS_(2)heterostructures,photo-synapse devices are designed and fabricated to simulate visual neural systems functions,including multistate storage,optical logic operation,potentiation and depression,paired-pulse facilitation(PPF),short-term memory(STM),long-term memory(LTM),and Learning-Forgetting-Relearning.By coupling the spatiotemporally relevant optical and electric information,the device can mimic the superior biological visual system’s light adaptation and Pavlovian conditioning.This work provides a strategy for dynamically tuning the orientation of ferroelectric-semiconductor heterojunction stacks and will give impetus to applying all-in-one sensing and memory-computing artificial vision systems.展开更多
Two-dimensional(2D)noble transition-metal dichalcogenide materials(NTMDs)have garnered remarkable attention due to their intriguing properties exhibiting potential applications in nanoelectronics,optoelectronics,and p...Two-dimensional(2D)noble transition-metal dichalcogenide materials(NTMDs)have garnered remarkable attention due to their intriguing properties exhibiting potential applications in nanoelectronics,optoelectronics,and photonics.The electronic structure and physical properties of 2D NTMDs can be effectively modulated using alloy engineering strategy.Nevertheless,the precise growth of wafer-scale 2D NTMDs alloys remains a significant challenge.In this work,we have achieved the controllable preparation of wafer-scale(2-inch)2D PdS_(2x)Se_(2(1-x)) nanofilms(NFs)with fully tunable compositions on various substrates using pre-deposited Pd NFs assisted chemical vapor deposition technique.High-performance photodetectors based on the PdS_(2x)Se_(2(1-x))NFs were fabricated,which exhibit broadband photodetection performance from visible to near-infrared(NIR)wavelength range at room temperature.Significantly,the PdS0.9Se1.1-based photodetectors display a responsivity up to 0.192 A W^(-1) and a large specific detectivity of 5.5×1011 Jones for 850 nm light,enabling an excellent high-resolution NIR single-pixel imaging(SPI)without an additional filtering circuit.Our work paves a new route for the controlled synthesis of wafer-scale and high-quality 2D NTMDs alloy NFs,which is essential for designing advanced optoelectronic devices.展开更多
基金supported by Independent Innovation Science Foundation of National University of Defense Technology(Grant No.23-ZZCX-JDZ-44)。
文摘Tunable mid-infrared and far-infrared laser output was demonstrated based on BaGa_(4)Se_(7)crystals and an optical parametric oscillator(OPO).With a 1.06μm Nd:YAG laser and a double-pass singly resonant OPO cavity,a laser energy output of 2.2 mJ at 10μm was obtained.By tuning the angle and temperature,a tunable laser output covering the wavelength range from 6μm to 17μm was obtained with a tuning precision better than 3 nm.The corresponding optical-to-optical conversion efficiency was 2.8%,and the slope efficiency was 4.4%.The damage effect of the output laser on detectors was also investigated,and point damage to the detector occurred at an output energy of 16.4μJ.The laser system has the advantages of miniaturization,a wide tuning range,high energy and high tuning resolution.Its broadband laser characteristics make it highly valuable for applications in atmospheric detection,infrared spectroscopy and electro-optical countermeasures.
基金supported by TANAKA KIKINZOKU KOGYO K.Kfinancially supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.NRF-2022R1A2C2006764)the Materials and Components Technology Development Program of MOTIE/KEIT(No.[20012460])。
文摘Ruthenium(Ru)-based chalcogenide(S,Se)is a promising material in various fields,such as optics,photoelectrodes,and electrocatalysis,owing to its suitable bandgap for generating charge carriers under light illumination ranging from visible to near-infrared(NIR)and its high absorption coefficient.In this study,we report the synthesis of Ru Se_(2)thin films by chemical vapor deposition(CVD)with a bandgap matching the NIR region at 0.52 e V.Further,we demonstrated Ru S_(2x)Se_(2-2x)alloy films using the post-sulfurization process after CVD Ru Se_(2)with a tunable bandgap from 0.52 to 1.39 e V depending on sulfur composition.Remarkably,Ru S_(2x)Se_(2-2x)alloy film metal–semiconductor–metal(MSM)photodetector sulfurized at 500°C,with a 0.75 e V bandgap,exhibits enhanced broad absorption across NIR spectral ranges,suppressed dark current and high photoresponsivity in NIR wavelengths range even at zero-bias.We believe the bandgaptunable Ru S_(2x)Se_(2-2x)thin film through an efficient deposition method could be suitable for various optoelectronic applications.
基金supported by the National Natural Science Foundation of China(Nos.52371245,12174237,12241403)the National Key Research and Development Program of China(No.2022YFB3505301).
文摘Van der Waals(vdW)ferroelectric-semiconductor heterojunction provides reconfigurable band alignment based on optical/electrical-assisted polarization switching,which shows great potential to construct artificial visual neural systems.However,the mechanical exfoliation fabrication scheme for proof-of-concept demonstrations and fundamental studies is cumbersome and not scalable for practical application.Here,we present a synthetic strategy for the large-scale and high crystallinity growth of planar/verticalα-In_(2)Se_(3)/MoS_(2)heterojunctions by dynamically tuning the growth temperature.Furthermore,based on theα-In_(2)Se_(3)/MoS_(2)heterostructures,photo-synapse devices are designed and fabricated to simulate visual neural systems functions,including multistate storage,optical logic operation,potentiation and depression,paired-pulse facilitation(PPF),short-term memory(STM),long-term memory(LTM),and Learning-Forgetting-Relearning.By coupling the spatiotemporally relevant optical and electric information,the device can mimic the superior biological visual system’s light adaptation and Pavlovian conditioning.This work provides a strategy for dynamically tuning the orientation of ferroelectric-semiconductor heterojunction stacks and will give impetus to applying all-in-one sensing and memory-computing artificial vision systems.
基金supported by Open Research Fund of Songshan Lake Materials Laboratory(No.2023SLABFK08)Key Research and Development Program of Hunan Province(No.2022GK2007)+2 种基金Key Project from Department Education of Hunan Province(No.22A0123)National Natural Science Foundation of China(No.11974301)Graduate Student Research Innovation of Xi-angtan University(No.XDCX2024Y198).
文摘Two-dimensional(2D)noble transition-metal dichalcogenide materials(NTMDs)have garnered remarkable attention due to their intriguing properties exhibiting potential applications in nanoelectronics,optoelectronics,and photonics.The electronic structure and physical properties of 2D NTMDs can be effectively modulated using alloy engineering strategy.Nevertheless,the precise growth of wafer-scale 2D NTMDs alloys remains a significant challenge.In this work,we have achieved the controllable preparation of wafer-scale(2-inch)2D PdS_(2x)Se_(2(1-x)) nanofilms(NFs)with fully tunable compositions on various substrates using pre-deposited Pd NFs assisted chemical vapor deposition technique.High-performance photodetectors based on the PdS_(2x)Se_(2(1-x))NFs were fabricated,which exhibit broadband photodetection performance from visible to near-infrared(NIR)wavelength range at room temperature.Significantly,the PdS0.9Se1.1-based photodetectors display a responsivity up to 0.192 A W^(-1) and a large specific detectivity of 5.5×1011 Jones for 850 nm light,enabling an excellent high-resolution NIR single-pixel imaging(SPI)without an additional filtering circuit.Our work paves a new route for the controlled synthesis of wafer-scale and high-quality 2D NTMDs alloy NFs,which is essential for designing advanced optoelectronic devices.
