摘要
利用机械剥离法制备α-In_(2)Se_(3)二维铁电材料,通过原子力显微镜分析样品的结构特征,并通过电子束光刻制备以α-In_(2)Se_(3)作为沟道的铁电沟道场效应晶体管。研究发现:通过在顶栅电极施加正负脉冲可以有效激励α-In_(2)Se_(3)面外极化,表现出增强和抑制的短程可塑性。并且,随着栅极电压脉冲积累,α-In_(2)Se_(3)面外极化特性会使得沟道铁电极化加强,对应的突触电流也会随之增加,从而实现由短程可塑性向长程可塑性的转变。此外,不同脉幅的激励信号可以调整长时程增强特性,展现了器件应用于复杂突触学习行为的可行性。
Two-dimensional ferroelectricα-In_(2)Se_(3)was fabricated using the mechanical exfoliation method,and the structural characteristics of the samples were analyzed by atomic force microscopy(AFM).Ferroelectric channel transistors withα-In_(2)Se_(3)as the channel were prepared by electron beam lithography.This work reveals that the out-of-plane polarization ofα-In_(2)Se_(3)can be effectively modulated by applying electrical pulses to the top-gate electrode,enabling the short-term plasticity(STP)through synaptic potentiation and depression.Significantly,cumulative gate voltage pulses amplify the ferroelectric polarization in the channel via domain alignment dynamics,resulting in a progressive enhancement of synaptic current,which facilitates transition from STP to long-term plasticity(LTP).Furthermore,the tunable LTP characteristics modified by pulse amplitude engineering demonstrate the capability ofα-In_(2)Se_(3)device to emulate complex synaptic learning rules.
作者
胡辰
彭松昂
HU Chen;PENG Songang(School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China;Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China)
出处
《中山大学学报(自然科学版)(中英文)》
北大核心
2025年第3期103-108,共6页
Acta Scientiarum Naturalium Universitatis Sunyatseni
基金
科技创新2030−“脑科学与类脑研究”重大项目(2022ZD0209200)。
