A space monocrystalline silicon（c-Si） solar cell under low-energy（〈 1 MeV） electron irradiation was investigated using noncontact photocarrier radiometry（PCR）. Monte Carlo simulation（MCS） was employed to char...A space monocrystalline silicon（c-Si） solar cell under low-energy（〈 1 MeV） electron irradiation was investigated using noncontact photocarrier radiometry（PCR）. Monte Carlo simulation（MCS） was employed to characterize the effect of different energy electron irradiation on the c-Si solar cell. The carrier transport parameters（carrier lifetime, diffusion coefficient, and surface recombination velocities） were obtained by best fitting the experimental results with a theoretical one-dimensional two-layer PCR model. The results showed that the increase of the irradiation electron energy caused a large reduction of the carrier lifetime and diffusion length. Furthermore, the rear surface recombination velocity of the Si：p base of the solar cell at the irradiation electron energy of 1 Me V was dramatically enhanced due to 1 MeV electron passing through the whole cell. Short-circuit current（I sc） degradation evaluated by PCR was in good agreement with that obtained by electrical measurement.展开更多
An experimental study on the photocarrier radiometry signals of As^＋ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion imp...An experimental study on the photocarrier radiometry signals of As^＋ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose （1×10^11-1×10^16/cm^2）, implantation energy （20-140 keV） and subsequent isochronical annealing temperature （500- 1100℃ are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.展开更多
A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from...A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from 1 ×1011 cm-2 to 1 ×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.展开更多
The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabricati...The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.展开更多
During the last few decades, photothermal radiometry（PTR） has been greatly developed and widely applied in the field of nondestructive testing. However, the traditional PTR system employs an expensive lock-in amplif...During the last few decades, photothermal radiometry（PTR） has been greatly developed and widely applied in the field of nondestructive testing. However, the traditional PTR system employs an expensive lock-in amplifier to detect the weak photothermal signal, which leads to high cost and long test time. In this paper, a fast transmission PTR system based on sampling by using an internal computer sound card was developed to lower the system cost and shorter the test time. A piece of amorphous silicon（a：Si） thin film solar cells with artificial defects was prepared and tested by the system. The results show that the sharpened defects can be identified easily and quickly according to the significant peaks of the original infrared signal sampled by the internal computer sound card. Furthermore, more detailed defects can be investigated by processing the infrared signal. These validate the effectiveness of the proposed transmission PTR system as a low cost and efficient non-destructive test technique.展开更多
Extrapolating from the propagation theories of electromagnetic waves in a layered medium, a three-layer medium model is deduced in this paper by using microwave radiometric remote sensing technology which is suitable ...Extrapolating from the propagation theories of electromagnetic waves in a layered medium, a three-layer medium model is deduced in this paper by using microwave radiometric remote sensing technology which is suitable to first-year sea ice condition of the northern part of China seas. Comparison with in situ data indicates that for microwave wavelength of 10 cm, the coherent model gives a quite good fit result for the thickness of sea ice less than 20 cm, and the incoherent model also works well for thickness within 20 to 40 cm. Based on three theoretical models, the inversion soft ware from microwave remote sensing data for calculating the thickness of sea ice can be set up. The relative complex dielectrical constants of different types of sea ice in the Liaodong Gulf calculated by using these theoretical models and measurement data are given in this paper. The extent of their values is (0. 5-4. 0)-j(0. 07~0. 19).展开更多
文摘A space monocrystalline silicon（c-Si） solar cell under low-energy（〈 1 MeV） electron irradiation was investigated using noncontact photocarrier radiometry（PCR）. Monte Carlo simulation（MCS） was employed to characterize the effect of different energy electron irradiation on the c-Si solar cell. The carrier transport parameters（carrier lifetime, diffusion coefficient, and surface recombination velocities） were obtained by best fitting the experimental results with a theoretical one-dimensional two-layer PCR model. The results showed that the increase of the irradiation electron energy caused a large reduction of the carrier lifetime and diffusion length. Furthermore, the rear surface recombination velocity of the Si：p base of the solar cell at the irradiation electron energy of 1 Me V was dramatically enhanced due to 1 MeV electron passing through the whole cell. Short-circuit current（I sc） degradation evaluated by PCR was in good agreement with that obtained by electrical measurement.
基金supported by the National Natural Science Foundation of China (Grant No.60676058)
文摘An experimental study on the photocarrier radiometry signals of As^＋ ion implanted silicon wafers before and after rapid thermal annealing is performed. The dependences of photocarrier radiometry amplitude on ion implantation dose （1×10^11-1×10^16/cm^2）, implantation energy （20-140 keV） and subsequent isochronical annealing temperature （500- 1100℃ are investigated. The results show that photocarrier radiometry signals are greatly enhanced for implanted samples annealed at high temperature, especially for those with a high implantation dose. The reduced surface recombination rate resulting from a high built-in electric field generated by annealing-activated impurities in the pn junction is believed to be responsible for the photocarrier radiometry signal enhancement. Photocarrier radiometry is contactless and can therefore be used as an effective in-line tool for the thermal annealing process monitoring of the ion-implanted wafers in semiconductor industries.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60676058 and 61076090)
文摘A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from 1 ×1011 cm-2 to 1 ×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61771103, 61704023, and 61601092)。
文摘The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon.
基金supported by the National Natural Science Foundation of China under Grant No.61379013the Excellent Doctoral Academic Support Program under Grant No.YBXSZC2013021
文摘During the last few decades, photothermal radiometry（PTR） has been greatly developed and widely applied in the field of nondestructive testing. However, the traditional PTR system employs an expensive lock-in amplifier to detect the weak photothermal signal, which leads to high cost and long test time. In this paper, a fast transmission PTR system based on sampling by using an internal computer sound card was developed to lower the system cost and shorter the test time. A piece of amorphous silicon（a：Si） thin film solar cells with artificial defects was prepared and tested by the system. The results show that the sharpened defects can be identified easily and quickly according to the significant peaks of the original infrared signal sampled by the internal computer sound card. Furthermore, more detailed defects can be investigated by processing the infrared signal. These validate the effectiveness of the proposed transmission PTR system as a low cost and efficient non-destructive test technique.
基金The project supported by National Natural Science Fundation of China
文摘Extrapolating from the propagation theories of electromagnetic waves in a layered medium, a three-layer medium model is deduced in this paper by using microwave radiometric remote sensing technology which is suitable to first-year sea ice condition of the northern part of China seas. Comparison with in situ data indicates that for microwave wavelength of 10 cm, the coherent model gives a quite good fit result for the thickness of sea ice less than 20 cm, and the incoherent model also works well for thickness within 20 to 40 cm. Based on three theoretical models, the inversion soft ware from microwave remote sensing data for calculating the thickness of sea ice can be set up. The relative complex dielectrical constants of different types of sea ice in the Liaodong Gulf calculated by using these theoretical models and measurement data are given in this paper. The extent of their values is (0. 5-4. 0)-j(0. 07~0. 19).
