Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-ba...Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-based analogs hinder their commercialization.Herein,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization process.This is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM device.The Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and flexibility.Concurrently,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 days.More impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and computation.Such multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)QDs.This work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.展开更多
The rapid development of internet of things(loT)urgently needs edge miniaturized computing devices with high efficiency and low-power consumption.In-sensor computing has emerged as a promising technology to enable in-...The rapid development of internet of things(loT)urgently needs edge miniaturized computing devices with high efficiency and low-power consumption.In-sensor computing has emerged as a promising technology to enable in-situ data processing within the sensor array.Here,we report an optoelectronic array for in-sensor computing by integrating photodiodes(PDs)with resistive random-access memories(RRAMs).The PD-RRAM unit cell exhibits reconfigurable optoelectronic output and photo-responsivity by programming RRAMs into different resistance states.Furthermore,a 3×3 PD-RRAM array is fabricated to demonstrate optical image recognition,achieving a universal architecture with ultralow latency and low power consumption.This study highlights the great potential of the PD-RRAM optoelectronic array as an energy-effcient in-sensor computing primitive for future IoT applications.展开更多
Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive s...Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.展开更多
基金supported by the National Natural Science Foundation of China(21374106)National Natural Science Foundation of China(11774318,12074347,and U1304212)National Key Research Program of China(2016YFA0200104).
文摘Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-based analogs hinder their commercialization.Herein,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization process.This is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM device.The Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and flexibility.Concurrently,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 days.More impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and computation.Such multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)QDs.This work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.
基金the National Key Research and Development Program(2021YFA0716400)the National Natural Science Foundation of China(62225405,62350002,61991443,62127814,62235005,and 61927811)the Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics。
文摘The rapid development of internet of things(loT)urgently needs edge miniaturized computing devices with high efficiency and low-power consumption.In-sensor computing has emerged as a promising technology to enable in-situ data processing within the sensor array.Here,we report an optoelectronic array for in-sensor computing by integrating photodiodes(PDs)with resistive random-access memories(RRAMs).The PD-RRAM unit cell exhibits reconfigurable optoelectronic output and photo-responsivity by programming RRAMs into different resistance states.Furthermore,a 3×3 PD-RRAM array is fabricated to demonstrate optical image recognition,achieving a universal architecture with ultralow latency and low power consumption.This study highlights the great potential of the PD-RRAM optoelectronic array as an energy-effcient in-sensor computing primitive for future IoT applications.
基金National Natural Science Foundation of China(No.61376017)。
文摘Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.
