Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-ba...Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-based analogs hinder their commercialization.Herein,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization process.This is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM device.The Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and flexibility.Concurrently,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 days.More impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and computation.Such multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)QDs.This work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.展开更多
The rapid development of internet of things(loT)urgently needs edge miniaturized computing devices with high efficiency and low-power consumption.In-sensor computing has emerged as a promising technology to enable in-...The rapid development of internet of things(loT)urgently needs edge miniaturized computing devices with high efficiency and low-power consumption.In-sensor computing has emerged as a promising technology to enable in-situ data processing within the sensor array.Here,we report an optoelectronic array for in-sensor computing by integrating photodiodes(PDs)with resistive random-access memories(RRAMs).The PD-RRAM unit cell exhibits reconfigurable optoelectronic output and photo-responsivity by programming RRAMs into different resistance states.Furthermore,a 3×3 PD-RRAM array is fabricated to demonstrate optical image recognition,achieving a universal architecture with ultralow latency and low power consumption.This study highlights the great potential of the PD-RRAM optoelectronic array as an energy-effcient in-sensor computing primitive for future IoT applications.展开更多
Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive s...Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.展开更多
We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures...We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250℃)using these approaches.Combustion synthesis reduces the energy required for oxide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and promoting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO_(2)films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O_(3)-assisted photochemical activation resulted in patterned ZrO_(2)films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO_(2)films using combustion synthesis exhibited excellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.展开更多
Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and g...Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and green electronics.Resistive random access memory(RRAM)is a promising candidate for next-generation memory.In this context,biocompatible l-carrageenan(l-car),extracted from natural seaweed,is introduced for the fabrication of RRAM devices(Ag/l-car/Pt).Taking advantage of the complexation processes between the functional groups(C–O–C,C–O–H,et al.)and Ag metal ions,a lower migration barrier of Ag ions and a high-speed switching(22.2 ns for SET operation/26 ns for RESET operation)were achieved,resulting in an ultralow power consumption of 56 fJ.And the prepared Ag/l-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexibility.In addition,thanks to the hydrophilic groups of l-car molecule,the RRAM devices can be rapidly dissolved in deionized(DI)water within 13 minutes,showing excellent transient characteristics.This work demonstrates that l-car based RRAM devices have great potential for applications in secure storage applications,flexible electronics and transient electronics.展开更多
基金supported by the National Natural Science Foundation of China(21374106)National Natural Science Foundation of China(11774318,12074347,and U1304212)National Key Research Program of China(2016YFA0200104).
文摘Development of lead-free halide perovskites that are innocuous and stable has become an attractive trend in resistive random access memory(RRAM)fields.However,their inferior memory properties compared with the lead-based analogs hinder their commercialization.Herein,the lead-free Cs_(3)Bi_(2)Br_(9)perovskite quantum dot(PQD)-based RRAMs are reported with outstanding memory performance,where Cs_(3)Bi_(2)Br_(9)quantum dots(QDs)are synthesized via a modified ligand-assisted recrystallization process.This is the first report of applying Cs_(3)Bi_(2)Br_(9)QDs as the switching layer for RRAM device.The Cs_(3)Bi_(2)Br_(9)QD device demonstrates nonvolatile resistive switching(RS)effect with large ON/OFF ratio of 105,low set voltage of-0.45 V,as well as good reliability,reproducibility,and flexibility.Concurrently,the device exhibits the notable tolerance toward moisture,heat and light illumination,and long-term stability of 200 days.More impressively,the device shows the reliable light-modulated RS behavior,and therefrom the logic gate operations including"AND"and"OR"are implemented,foreboding its prospect in logic circuits integrated with storage and computation.Such multifunctionality of device could be derived from the unique 2D layered crystal structure,small particle size,quantum confinement effect,and photoresponse of Cs_(3)Bi_(2)Br_(9)QDs.This work provides the strategy toward the high-performance RRAMs based on stable and eco-friendly perovskites for future applications.
基金the National Key Research and Development Program(2021YFA0716400)the National Natural Science Foundation of China(62225405,62350002,61991443,62127814,62235005,and 61927811)the Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics。
文摘The rapid development of internet of things(loT)urgently needs edge miniaturized computing devices with high efficiency and low-power consumption.In-sensor computing has emerged as a promising technology to enable in-situ data processing within the sensor array.Here,we report an optoelectronic array for in-sensor computing by integrating photodiodes(PDs)with resistive random-access memories(RRAMs).The PD-RRAM unit cell exhibits reconfigurable optoelectronic output and photo-responsivity by programming RRAMs into different resistance states.Furthermore,a 3×3 PD-RRAM array is fabricated to demonstrate optical image recognition,achieving a universal architecture with ultralow latency and low power consumption.This study highlights the great potential of the PD-RRAM optoelectronic array as an energy-effcient in-sensor computing primitive for future IoT applications.
基金National Natural Science Foundation of China(No.61376017)。
文摘Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.
基金supported by the National Research Founda-tion of Korea(NRF)grants funded by the Ministry of Science and ICT(MSIT)(Nos.RS-2023-00251283,RS-2023-00257003,and 2022M3D1A2083618)supported by the DGIST R&D Program of the MSIT(No.23-CoE-BT-03).
文摘We have realized efficient photopatterning and high-quality ZrO_(2)films through combustion synthesis and manufactured resistive random access memory(RRAM)devices with excellent switching stability at low temperatures(250℃)using these approaches.Combustion synthesis reduces the energy required for oxide conversion,thus accelerating the decomposition of organic ligands in the UV-exposed area,and promoting the formation of metal-oxygen networks,contributing to patterning.Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors,and the prepared combustion ZrO_(2)films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice,along with an amorphous phase.Furthermore,the synergistic effect of combustion synthesis and UV/O_(3)-assisted photochemical activation resulted in patterned ZrO_(2)films forming even more complete metal-oxygen networks.RRAM devices fabricated with patterned ZrO_(2)films using combustion synthesis exhibited excellent switching characteristics,including a narrow resistance distribution,endurance of 103 cycles,and retention for 105 s at 85℃,despite low-temperature annealing.Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.
基金supported financially by the National Key Research and Development Program of China(Grant No.2023YFB4402301)the National Science Fund for Distinguished Young Scholars(Grant No.52025022)+3 种基金the National Natural Science Foundation of China(Grant Nos.U19A2091,62004016,51732003,52072065,11974072,52372137,and 52272140)the“111”Project(Grant No.B13013)the Fundamental Research Funds for the Central Universities(Grant Nos.2412022QD036 and 2412023YQ004)the funding from Jilin Province(Grant Nos.20210201062GX,20220502002GH,20230402072GH,20230101017JC,and 20210509045RQ)。
文摘Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and green electronics.Resistive random access memory(RRAM)is a promising candidate for next-generation memory.In this context,biocompatible l-carrageenan(l-car),extracted from natural seaweed,is introduced for the fabrication of RRAM devices(Ag/l-car/Pt).Taking advantage of the complexation processes between the functional groups(C–O–C,C–O–H,et al.)and Ag metal ions,a lower migration barrier of Ag ions and a high-speed switching(22.2 ns for SET operation/26 ns for RESET operation)were achieved,resulting in an ultralow power consumption of 56 fJ.And the prepared Ag/l-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexibility.In addition,thanks to the hydrophilic groups of l-car molecule,the RRAM devices can be rapidly dissolved in deionized(DI)water within 13 minutes,showing excellent transient characteristics.This work demonstrates that l-car based RRAM devices have great potential for applications in secure storage applications,flexible electronics and transient electronics.
