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ZnO-SnO_2透明导电膜的低温制备及性质 被引量:13
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作者 黄树来 马瑾 +3 位作者 刘晓梅 马洪磊 孙征 张德恒 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第1期56-59,共4页
在室温下 ,采用射频磁控溅射法在 70 5 9玻璃衬底上制备出 Zn O- Sn O2 透明导电薄膜 .制备的薄膜为非晶结构 ,并且薄膜的电阻率强烈地依赖于溅射气体中的氧分压 .薄膜的最小电阻率为 7.2 7× 10 - 3Ω· cm,载流子浓度为4 .3&#... 在室温下 ,采用射频磁控溅射法在 70 5 9玻璃衬底上制备出 Zn O- Sn O2 透明导电薄膜 .制备的薄膜为非晶结构 ,并且薄膜的电阻率强烈地依赖于溅射气体中的氧分压 .薄膜的最小电阻率为 7.2 7× 10 - 3Ω· cm,载流子浓度为4 .3× 10 1 9cm- 3、霍尔迁移率为 2 0 .5 cm2 / (V· s) ,在可见光范围内的平均透过率达到了 90 % . 展开更多
关键词 透明导电膜 ZnO—sno2 射频磁控溅射
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SnO_2:Sb薄膜的制备和光致发光性质 被引量:4
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作者 王玉恒 马瑾 +3 位作者 计峰 余旭浒 张锡健 马洪磊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第5期922-926,共5页
用射频磁控溅射法在玻璃衬底上制备出SnO2∶Sb薄膜.制备样品为多晶薄膜,具有纯氧化锡的四方金红石结构和(110)择优取向,Sb离子以替位式掺杂的形式存在于SnO2 晶格中.室温条件下对样品进行光致发光测量,在392nm附近观测到强的紫外紫光发... 用射频磁控溅射法在玻璃衬底上制备出SnO2∶Sb薄膜.制备样品为多晶薄膜,具有纯氧化锡的四方金红石结构和(110)择优取向,Sb离子以替位式掺杂的形式存在于SnO2 晶格中.室温条件下对样品进行光致发光测量,在392nm附近观测到强的紫外紫光发射,发射强度随制备功率的增加而增强,且样品退火后发射强度也明显增强.紫外紫光发射的起源被归于由Sb形成的施主能级和受主能级之间的电子跃迁. 展开更多
关键词 sno2:Sb薄膜 射频磁控溅射 光致发光
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射频溅射法研制SnO_2纳米薄膜 被引量:5
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作者 刘庆业 蒙冕武 +1 位作者 邓希敏 刘明登 《广西师范大学学报(自然科学版)》 CAS 2001年第4期64-67,共4页
采用射频溅射工艺制得细小均匀的 β-Sn纳米锡膜 ,然后通过氧化处理工艺获得组织非常细小均匀的纳米级二氧化锡薄膜 .X-衍射实验结果表明 Sn和 Sn O2 晶粒尺寸分别约为 6 nm和 5 nm,采用该工艺获得的Sn O2 纳米薄膜结构比较稳定 ,为薄膜... 采用射频溅射工艺制得细小均匀的 β-Sn纳米锡膜 ,然后通过氧化处理工艺获得组织非常细小均匀的纳米级二氧化锡薄膜 .X-衍射实验结果表明 Sn和 Sn O2 晶粒尺寸分别约为 6 nm和 5 nm,采用该工艺获得的Sn O2 纳米薄膜结构比较稳定 ,为薄膜型 Sn O2 展开更多
关键词 射频溅射 sno2 二氧化锡薄膜 纳米材料 制备工艺
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Texture ZnO Thin-Films and their Application as Front Electrode in Solar Cells
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作者 Yue-Hui Hu Yi-Chuan Chen +4 位作者 Hai-Jun Xu Hao Gao Wei-Hui Jiang Fei Hu Yan-Xiang Wang 《Engineering(科研)》 2010年第12期973-978,共6页
In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured s... In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured structure with both crater-like and pyramid-like), were prepared by three kinds of methods, and the application of these ZnO thin-films as a front electrode in solar cell was studied, respectively. In the first method with negative bias voltage and appropriate sputtering parameters, the textured structure with columnar and polygon on the surface of ZnO thin-film are both existence for the sample prepared by direct magnetron sputtering. Using as a front electrode in solar cell, the photoelectric conversion efficiency Eff of 7.00% was obtained. The second method is that by sputtering on the ZnO:Al self-supporting substrate, and the distribution of pyramid-like was gained. Moreover, the higher (8.25%) photoelectric conversion efficiency of solar cell was got. The last method is that by acid-etching the as-deposited ZnO thin-film which possesses mainly both columnar and polygon structure, and the textured ZnO thin-film with both crater-like and pyramid-like structure was obtained, and the photoelectric conversion efficiency of solar cell is 7.10% when using it as front electrode. These results show that the textured ZnO thin-film prepared on self-supporting substrate is more suitable for using as a front electrode in amorphous silicon cells. 展开更多
关键词 TEXTURED ZnO thin-film Solar Cells FRONT ELECTRODE MAGNETRON sputtering Transparent Conducting Oxide Surface Of Micrograph sno2:F
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