The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling j...The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.展开更多
With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on ...With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.展开更多
A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,fr...A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.展开更多
The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conv...The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.展开更多
设计了一套存储器辐射效应远程在线测试系统,对一款磁阻随机存取存储器(Magnetoresistive Random Access Memory,MRAM)在不同工作模式下开展了电离总剂量和瞬态电离辐射效应实验研究,获得了以下研究结果:1)电离总剂量辐照实验中,在动态...设计了一套存储器辐射效应远程在线测试系统,对一款磁阻随机存取存储器(Magnetoresistive Random Access Memory,MRAM)在不同工作模式下开展了电离总剂量和瞬态电离辐射效应实验研究,获得了以下研究结果:1)电离总剂量辐照实验中,在动态读写模式下,首先出现的效应为电源电流显著增加,器件在30 krad(Si)时,出现了读数据错误;2)瞬态电离辐射辐照实验中,MRAM在静态加电模式和动态读数据模式未观测到数据或功能错误,但在动态写数据模式下出现数据写入失败的现象。初步分析认为写数据失败的原因可能是γ射线引起的PN结光电流形成电路全局光电流,造成MRAM电源波动,触发MRAM写保护有效。本文研究结果表明在总剂量与瞬态电离辐射环境下,MRAM会出现功能异常。MRAM的外围电路是其抗辐射性能的敏感薄弱环节。展开更多
We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a t...We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a threestage fiber amplifier with an integrated acousto-optical modulator. A digital electronic control system with feedback combines the functions of the arbitrary micropulse selection and modulation resulting in macropulse envelope profiling. As a benefit, a narrow temporal transparency window of the modulator, comparable to a laser pulse repetition period, effectively improves temporal contrast. In experiments, we demonstrated rectangular laser pulse train profiling at the output of a three-cascade Yb-doped fiber amplifier.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61404161)
文摘The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
文摘With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
基金supported by the National Natural Science Foundation of China(No.11705276)the West Light Foundation of the Chinese Academy of Sciences(No.CAS-LWC-2017-2)
文摘A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.
基金supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (RS-2024-00334190)。
文摘The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.
文摘设计了一套存储器辐射效应远程在线测试系统,对一款磁阻随机存取存储器(Magnetoresistive Random Access Memory,MRAM)在不同工作模式下开展了电离总剂量和瞬态电离辐射效应实验研究,获得了以下研究结果:1)电离总剂量辐照实验中,在动态读写模式下,首先出现的效应为电源电流显著增加,器件在30 krad(Si)时,出现了读数据错误;2)瞬态电离辐射辐照实验中,MRAM在静态加电模式和动态读数据模式未观测到数据或功能错误,但在动态写数据模式下出现数据写入失败的现象。初步分析认为写数据失败的原因可能是γ射线引起的PN结光电流形成电路全局光电流,造成MRAM电源波动,触发MRAM写保护有效。本文研究结果表明在总剂量与瞬态电离辐射环境下,MRAM会出现功能异常。MRAM的外围电路是其抗辐射性能的敏感薄弱环节。
基金Russian Foundation for Basic Research(RFBR)(15-07-03719)Russian Science Foundation(RSF)(16-19-10448)Ministry of Education and Science of the Russian Federation(Minobrnauka)(14.Z50.31.0007,K2-2015-077)
文摘We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a threestage fiber amplifier with an integrated acousto-optical modulator. A digital electronic control system with feedback combines the functions of the arbitrary micropulse selection and modulation resulting in macropulse envelope profiling. As a benefit, a narrow temporal transparency window of the modulator, comparable to a laser pulse repetition period, effectively improves temporal contrast. In experiments, we demonstrated rectangular laser pulse train profiling at the output of a three-cascade Yb-doped fiber amplifier.
