With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1O...With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1OK. We consider the exciting light with right-handed circular polarization, and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of ｜1/2） and ｜- 1/2） spin conduction bands. At room temperature, the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the ｜- 1/2） band. The greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive en- ergy above the quasi-Fermi level of the ｜- 1/2） band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessive energy, and in particular, up to a maximum of i above the quasi-Fermi level of the ｜1/2） band.展开更多
A detailed investigation carried out, with the help of extensive simulations using the TCAD device simulator Sentaurus, with the aim of achieving an understanding of the effects of variations in gate and drain potenti...A detailed investigation carried out, with the help of extensive simulations using the TCAD device simulator Sentaurus, with the aim of achieving an understanding of the effects of variations in gate and drain potentials on the device characteristics of a silicon double-gate tunnel field effect transistor（Si-DG TFET） is reported in this paper. The investigation is mainly aimed at studying electrical properties such as the electric potential, the electron density, and the electron quasi-Fermi potential in a channel. From the simulation results, it is found that the electrical properties in the channel region of the DG TFET are different from those for a DG MOSFET. It is observed that the central channel potential of the DG TFET is not pinned to a fixed potential even after the threshold is passed（as in the case of the DG MOSFET）; instead, it initially increases and later on decreases with increasing gate voltage, and this is also the behavior exhibited by the surface potential of the device. However, the drain current always increases with the applied gate voltage. It is also observed that the electron quasi-Fermi potential（e QFP）decreases as the channel potential starts to decrease, and there are hiphops in the channel e QFP for higher applied drain voltages. The channel regime resistance is also observed for higher gate length, which has a great effect on the I–V characteristics of the DG TFET device. These channel regime electrical properties will be very useful for determining the tunneling current; thus these results may have further uses in developing analytical current models.展开更多
We use the path-integral formalism to investigate the vortex properties of a quasi-two dimensional（2D） Fermi superfluid system trapped in an optical lattice potential.Within the framework of mean-field theory,the co...We use the path-integral formalism to investigate the vortex properties of a quasi-two dimensional（2D） Fermi superfluid system trapped in an optical lattice potential.Within the framework of mean-field theory,the cooper pair density,the atom number density,and the vortex core size are calculated from weakly interacting BCS regime to strongly coupled while weakly interacting BEC regime.Numerical results show that the atoms gradually penetrate into the vortex core as the system evolves from BEC to BCS regime.Meanwhile,the presence of the optical lattice allows us to analyze the vortex properties in the crossover from three-dimensional（3D） to 2D case.Furthermore,using a simple re-normalization procedure,we find that the two-body bound state exists only when the interaction is stronger than a critical one denoted by G_c which is obtained as a function of the lattice potential＇s parameter.Finally,we investigate the vortex core size and find that it grows with increasing interaction strength.In particular,by analyzing the behavior of the vortex core size in both BCS and BEC regimes,we find that the vortex core size behaves quite differently for positive and negative chemical potentials.展开更多
Many physical systems can be modeled as quasi-Hamiltonian systems and the stochastic averaging method for quasi-Hamiltonian systems can be applied to yield reasonable approximate response sta-tistics.In the present pa...Many physical systems can be modeled as quasi-Hamiltonian systems and the stochastic averaging method for quasi-Hamiltonian systems can be applied to yield reasonable approximate response sta-tistics.In the present paper,the basic idea and procedure of the stochastic averaging method for quasi Hamiltonian systems are briefly introduced.The applications of the stochastic averaging method in studying the dynamics of active Brownian particles,the reaction rate theory,the dynamics of breathing and denaturation of DNA,and the Fermi resonance and its effect on the mean transition time are reviewed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11504194 and 11274189the Project of Shandong-Provincial Higher Educational Science and Technology Program under Grant No J14LJ06the Application Foundation Research Program of Qingdao under Grant No 14-2-4-101-jch
文摘With spin-polarized-dependent band gap renormalization effect taken into account, the energy-dependent evolu- tion of electron spin polarization in GaAs is calculated at room temperature and at a low temperature of 1OK. We consider the exciting light with right-handed circular polarization, and the calculation results show that the degree of electron spin polarization is dependent strongly on the quasi-Fermi levels of ｜1/2） and ｜- 1/2） spin conduction bands. At room temperature, the degree of electron spin polarization decreases sharply from 1 near the bottom of the conduction band, and then increases to a stable value above the quasi-Fermi level of the ｜- 1/2） band. The greater the quasi-Fermi level is, the higher the degree of electron spin polarization with excessive en- ergy above the quasi-Fermi level of the ｜- 1/2） band can be achieved. At low temperature, the degree of electron spin polarization decreases from 1 sharply near the bottom of the conduction band, and then increases with the excessive energy, and in particular, up to a maximum of i above the quasi-Fermi level of the ｜1/2） band.
文摘A detailed investigation carried out, with the help of extensive simulations using the TCAD device simulator Sentaurus, with the aim of achieving an understanding of the effects of variations in gate and drain potentials on the device characteristics of a silicon double-gate tunnel field effect transistor（Si-DG TFET） is reported in this paper. The investigation is mainly aimed at studying electrical properties such as the electric potential, the electron density, and the electron quasi-Fermi potential in a channel. From the simulation results, it is found that the electrical properties in the channel region of the DG TFET are different from those for a DG MOSFET. It is observed that the central channel potential of the DG TFET is not pinned to a fixed potential even after the threshold is passed（as in the case of the DG MOSFET）; instead, it initially increases and later on decreases with increasing gate voltage, and this is also the behavior exhibited by the surface potential of the device. However, the drain current always increases with the applied gate voltage. It is also observed that the electron quasi-Fermi potential（e QFP）decreases as the channel potential starts to decrease, and there are hiphops in the channel e QFP for higher applied drain voltages. The channel regime resistance is also observed for higher gate length, which has a great effect on the I–V characteristics of the DG TFET device. These channel regime electrical properties will be very useful for determining the tunneling current; thus these results may have further uses in developing analytical current models.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51331006,51590883,and 11204321)the Project of Chinese Academy of Sciences(Grant No.KJZD-EW-M05-3)
文摘We use the path-integral formalism to investigate the vortex properties of a quasi-two dimensional（2D） Fermi superfluid system trapped in an optical lattice potential.Within the framework of mean-field theory,the cooper pair density,the atom number density,and the vortex core size are calculated from weakly interacting BCS regime to strongly coupled while weakly interacting BEC regime.Numerical results show that the atoms gradually penetrate into the vortex core as the system evolves from BEC to BCS regime.Meanwhile,the presence of the optical lattice allows us to analyze the vortex properties in the crossover from three-dimensional（3D） to 2D case.Furthermore,using a simple re-normalization procedure,we find that the two-body bound state exists only when the interaction is stronger than a critical one denoted by G_c which is obtained as a function of the lattice potential＇s parameter.Finally,we investigate the vortex core size and find that it grows with increasing interaction strength.In particular,by analyzing the behavior of the vortex core size in both BCS and BEC regimes,we find that the vortex core size behaves quite differently for positive and negative chemical potentials.
基金supported by the National Natural Science Foundation of China (12141002,52088101,11874417,11974389,and 52172216)the Ministry of Science and Technology of China (2021YFA0718702)+5 种基金the Chinese Academy of Sciences through the Strategic Priority Research Programthe Scientific Instrument Developing Programthe Project for Young Scientists in Basic Research (XDB33000000,YJKYYQ20200017,and YSBR-057)the Chinese Postdoctoral Science Foundation (E0BK181)the funding support of the National Key Research and Development Program of China (2018YFA0702100)the support from the Key Research Project of Zhejiang Laboratory (2021PE0AC02)。
基金Supported by the National Natural Science Foundation of China (Grant Nos. 10772159 and 10802074)the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20060335125)the Zhejiang Provincial Natural Science Foundation of China (Grant No. Y7080070)
文摘Many physical systems can be modeled as quasi-Hamiltonian systems and the stochastic averaging method for quasi-Hamiltonian systems can be applied to yield reasonable approximate response sta-tistics.In the present paper,the basic idea and procedure of the stochastic averaging method for quasi Hamiltonian systems are briefly introduced.The applications of the stochastic averaging method in studying the dynamics of active Brownian particles,the reaction rate theory,the dynamics of breathing and denaturation of DNA,and the Fermi resonance and its effect on the mean transition time are reviewed.
