Si P微系统是一种高度集成化的系统,其内部可能集成1个或多个DSP、NOR Flash和DDR存储器、AI加速芯片等,有些复杂的微系统还集成了FPGA芯片。由于内部集成了多个微组件,芯片之间相互连接,传统的测试单一微组件的方法并不适用于微系统的...Si P微系统是一种高度集成化的系统,其内部可能集成1个或多个DSP、NOR Flash和DDR存储器、AI加速芯片等,有些复杂的微系统还集成了FPGA芯片。由于内部集成了多个微组件,芯片之间相互连接,传统的测试单一微组件的方法并不适用于微系统的测试。提出了一套DSP微组件测试方法,该系统包括1块专门的测试板、可调试的电脑测试环境和JTAG通信。与单一的DSP裸芯测试相比,它可以快速稳定地实现DSP微组件的性能测试,满足大批量生产测试的需求。展开更多
对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PT...对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在α物相。利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 e V;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 e V;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C—Si—O键及C—Si键,构成了界面层的稳定结构。展开更多
To optimize the comprehensive properties of Ni−Si precipitation strengthened phosphor bronze,the impact of the Ni/Si mass ratio and heat treatment process on a Cu−8Sn−0.1P−1Ni−xSi alloy was explored.High resolution fi...To optimize the comprehensive properties of Ni−Si precipitation strengthened phosphor bronze,the impact of the Ni/Si mass ratio and heat treatment process on a Cu−8Sn−0.1P−1Ni−xSi alloy was explored.High resolution field emission scanning electron microscopy and transmission electron microscopy were used for microstructural characterization.The results indicate that the properties are influenced by the Ni/Si mass ratio,attributed to the formation of various second phases.Simultaneously,by influencing the diffusion rate,the microstructures and properties are influenced by the solid solution treatment.The strength is enhanced by precipitated nanoscale particles during the aging process by influencing the motion of dislocations.Ultimately,excellent comprehensive properties,including ultimate tensile strength,yield strength,and elongation of 866 MPa,772 MPa,and 8.7%,respectively,are obtained in the Cu−8Sn−0.1P−1Ni−0.227Si alloy.展开更多
Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and in...Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.展开更多
文摘对PTCDA的分子结构及其化学键的形成进行了分析,并讨论了晶面指数(100)Si单晶的晶格结构。在此基础上,评述了PTCDA分子在P-Si单晶(100)晶面上生长的机理,并制备了样品PTCDA/P-Si(100)。利用XRD对样品测试得出,在P-Si(100)晶面上沉积的PTCDA薄膜中仅存在α物相。利用XPS对样品测试得出,在其界面层中PTCDA酸酐中的4个羟基O原子与C原子结合,其结合能为532.4 e V;苝核基团外围的8个C、H原子以共价键结合,其结合能为289.0 e V;在界面处,悬挂键上的Si原子与PTCDA酸酐中的C、O原子结合,形成C—Si—O键及C—Si键,构成了界面层的稳定结构。
基金the support of the National Key Research and Development Program of China(No.2018YFE0306103)the National Natural Science Foundation of China(No.52071050)the Science and Technology Innovation Project of Ningbo,China(No.2021Z032).
文摘To optimize the comprehensive properties of Ni−Si precipitation strengthened phosphor bronze,the impact of the Ni/Si mass ratio and heat treatment process on a Cu−8Sn−0.1P−1Ni−xSi alloy was explored.High resolution field emission scanning electron microscopy and transmission electron microscopy were used for microstructural characterization.The results indicate that the properties are influenced by the Ni/Si mass ratio,attributed to the formation of various second phases.Simultaneously,by influencing the diffusion rate,the microstructures and properties are influenced by the solid solution treatment.The strength is enhanced by precipitated nanoscale particles during the aging process by influencing the motion of dislocations.Ultimately,excellent comprehensive properties,including ultimate tensile strength,yield strength,and elongation of 866 MPa,772 MPa,and 8.7%,respectively,are obtained in the Cu−8Sn−0.1P−1Ni−0.227Si alloy.
基金Project is supported by the National Natural Science Foundationof China (Grant No 60076023)
文摘Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.
