摘要
利用AFM研究了在不同衬底温度及蒸发条件下制备的有机半导体材料PTCDA在P-Si(100)形成的薄膜讨论了其表面形貌及岛状晶核分布与生长温度之间的机理。
The surfeace morphology of the thin films for organic semiconductor material PTCDA was investigated by AFM, which was prepared on the substrate P- Si （100） at different temperatures and under different vapor conditions. At the same time the mechanism between surface morphology island distribution and growth temperature was also analyzed.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2006年第3期225-228,共4页
Journal of Functional Materials and Devices
基金
国家自然科学基金(No.60276026)
甘肃省自然科学基金资助项目(No.3ZS041-A25-001)
