研究了通过热丝CVD法在施加了Ni-P/Cu复合中间过渡层的W18Cr4V高速钢衬底表面进行金刚石涂层的沉积技术以及不同压力条件对沉积出的CVD金刚石涂层质量的影响。最后通过扫描电镜分别对Cu、Ni-P以及不同反应压力下沉积的金刚石涂层的表面...研究了通过热丝CVD法在施加了Ni-P/Cu复合中间过渡层的W18Cr4V高速钢衬底表面进行金刚石涂层的沉积技术以及不同压力条件对沉积出的CVD金刚石涂层质量的影响。最后通过扫描电镜分别对Cu、Ni-P以及不同反应压力下沉积的金刚石涂层的表面形貌进行了检测分析,通过XRD、拉曼光谱仪、洛氏硬度仪对金刚石涂层性能进行检测分析。结果表明:Ni-P/Cu复合中间过渡层可以明显的抑制Fe、Co的催石墨化作用。在此基础上通过沉积参数的优化,在W18Cr4V高速钢衬底表面成功沉积出高质量的CVD金刚石涂层。压力为4 kPa条件下沉积的CVD金刚石涂层较5 k Pa的金刚石颗粒晶型明显、分布致密。展开更多
P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement a...P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm?3, resistivity of 0.04706 ?·cm and Hall mobility of 259 cm2/(V·s); they still exhibited p-type conduction after a month. When the substrate tem- perature was too high, the film was transformed from p-type to n-type conduction.展开更多
文摘研究了通过热丝CVD法在施加了Ni-P/Cu复合中间过渡层的W18Cr4V高速钢衬底表面进行金刚石涂层的沉积技术以及不同压力条件对沉积出的CVD金刚石涂层质量的影响。最后通过扫描电镜分别对Cu、Ni-P以及不同反应压力下沉积的金刚石涂层的表面形貌进行了检测分析,通过XRD、拉曼光谱仪、洛氏硬度仪对金刚石涂层性能进行检测分析。结果表明:Ni-P/Cu复合中间过渡层可以明显的抑制Fe、Co的催石墨化作用。在此基础上通过沉积参数的优化,在W18Cr4V高速钢衬底表面成功沉积出高质量的CVD金刚石涂层。压力为4 kPa条件下沉积的CVD金刚石涂层较5 k Pa的金刚石颗粒晶型明显、分布致密。
基金Acknowledgment The project was supported by the Innovation Team Foundation of Educational Department of Liaoning Province, China （Grant No. 2007T088）, the Natural Science Foundation of Liaoning Province, China （Grant No. 20072155）.
基金Chengdu Science and Technology Project (Grant No. 07GGYB572GX)Fund of State Key Laboratory (Grant No. L08010301JX0615)
文摘P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm?3, resistivity of 0.04706 ?·cm and Hall mobility of 259 cm2/(V·s); they still exhibited p-type conduction after a month. When the substrate tem- perature was too high, the film was transformed from p-type to n-type conduction.
