Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier.Conventional polarization-sensitive photodetection relies on a combination of polarizing optical ele...Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier.Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors,which requires a substantial amount of space and manufacturing expenses.Although onchip polarized photodetectors have been realized in recent years based on two-dimensional(2D)materials with lowsymmetry crystal structures,they are limited by the intrinsic anisotropic property and thus the optional range of materials,the operation wavelength,and more importantly,the low anisotropic ratio,hindering their practical applications.In this work,we construct a versatile platform that transcends the constraints of material anisotropy,by integrating WSe2-based photodetector with MoS2-based field-effect transistor,delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio.The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared(iR)band,reaching the level of existing applications.Meanwhile,the system achieves a significant improvement in photosensitivity,with an on/off ratio of over 1o3 in the IR band.Based on the above performance optimization,we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of~99%.The proposed platform provides a promising route for the development of the longsought minimized,high-performance,multifunctional optoelectronic systems.展开更多
The rapid advancement of photonic integrated circuits(PICs)has presented a promising solution to meet future demands for faster data transmission,broader bandwidth,and lower power consumption.However,the indirect band...The rapid advancement of photonic integrated circuits(PICs)has presented a promising solution to meet future demands for faster data transmission,broader bandwidth,and lower power consumption.However,the indirect bandgap of silicon presents challenges in achieving optical gain,necessitating the integration of III-V materials through complex and costly bonding or epitaxial techniques.In this context,colloidal quantum dots(CQDs)have emerged as a viable alternative for on-chip light sources due to their unique properties,including cost-effective synthesis,high photoluminescence quantum yield,precisely tunable emission wavelengths across visible to near-infrared,and excellent solution processability.These distinct advantages position CQDs as promising components for next-generation optoelectronic devices,fueling advancements in fields such as telecommunications,sensing,and display technologies.In this review,we systematically examine the structural evolution of CQDs aiming at luminescent property enhancement and explore their integration with various photonic platforms.Key applications are discussed,focusing on waveguide-coupled CQD light-emitting diodes and lasers,metasurface-integrated CQD lasers,and cavity-coupled CQD single-photon sources.Additionally,this review presents recent efforts in promoting electrically pumped CQD lasers,highlighting the potential of CQD light sources to revolutionize on-chip photonic systems.Finally,we present prospects for further development of CQD-based on-chip light sources,emphasizing their role in the future of integrated photonics.展开更多
基金support of the National Natural Science Foundation of China(Nos.62334010,62121005,and 62304221)the National Key Researchand Development Program(2021YFA0717600)the International Fund Program of Changchun Institute of Optics,Fine Mechanics andPhysics,ChineseAcademyofSciences.
文摘Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier.Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors,which requires a substantial amount of space and manufacturing expenses.Although onchip polarized photodetectors have been realized in recent years based on two-dimensional(2D)materials with lowsymmetry crystal structures,they are limited by the intrinsic anisotropic property and thus the optional range of materials,the operation wavelength,and more importantly,the low anisotropic ratio,hindering their practical applications.In this work,we construct a versatile platform that transcends the constraints of material anisotropy,by integrating WSe2-based photodetector with MoS2-based field-effect transistor,delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio.The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared(iR)band,reaching the level of existing applications.Meanwhile,the system achieves a significant improvement in photosensitivity,with an on/off ratio of over 1o3 in the IR band.Based on the above performance optimization,we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of~99%.The proposed platform provides a promising route for the development of the longsought minimized,high-performance,multifunctional optoelectronic systems.
基金supported by the National Key Research and Development Program of China(No.2022YFB3606504)National Natural Science Foundation of China(No.62122034,No.62475171)+2 种基金Shenzhen Key Laborlatory for Advanced Quantum Dot Displays and Lighting(No.ZDSYS201707281632549)Shenzhen Stable Support Research Foundation(No.20220717215521001)High Level of Special Funds(No.G030230001,G03034K002)from Southern University of Science and Technology。
文摘The rapid advancement of photonic integrated circuits(PICs)has presented a promising solution to meet future demands for faster data transmission,broader bandwidth,and lower power consumption.However,the indirect bandgap of silicon presents challenges in achieving optical gain,necessitating the integration of III-V materials through complex and costly bonding or epitaxial techniques.In this context,colloidal quantum dots(CQDs)have emerged as a viable alternative for on-chip light sources due to their unique properties,including cost-effective synthesis,high photoluminescence quantum yield,precisely tunable emission wavelengths across visible to near-infrared,and excellent solution processability.These distinct advantages position CQDs as promising components for next-generation optoelectronic devices,fueling advancements in fields such as telecommunications,sensing,and display technologies.In this review,we systematically examine the structural evolution of CQDs aiming at luminescent property enhancement and explore their integration with various photonic platforms.Key applications are discussed,focusing on waveguide-coupled CQD light-emitting diodes and lasers,metasurface-integrated CQD lasers,and cavity-coupled CQD single-photon sources.Additionally,this review presents recent efforts in promoting electrically pumped CQD lasers,highlighting the potential of CQD light sources to revolutionize on-chip photonic systems.Finally,we present prospects for further development of CQD-based on-chip light sources,emphasizing their role in the future of integrated photonics.
