Aqueous organic redox flow batteries(AORFBs)exploit the reversible electrochemical reactions of watersoluble organic redox-active species to store electricity and have emerged as promising electrochemical energy stora...Aqueous organic redox flow batteries(AORFBs)exploit the reversible electrochemical reactions of watersoluble organic redox-active species to store electricity and have emerged as promising electrochemical energy storage technologies.To improve the battery performance related to the cell resistance,such as the power density and energy efficiency,it is essential to understand the cell resistance and determine the major contributor.Here,we conduct comprehensive electrochemical impedance spectroscopy(EIS)studies and cell polarization on a representative TEMPTMA/MV cell assembled with a commercial AMVN membrane and probe the proportion of the ohmic resistance to the total cell resistance at various stages of charge(SOCs)ranging from 10%to 100%.At 0 mA·cm^(−2),the ohmic resistance is responsible for 60.3%–71.7%of the resistance of the entire cell,whereas at high current densities(for example,when the power density reaches the maximum),the ohmic resistance still contributes 47.9%–61.4%.Our quantitative analysis highlights the dominance of the ohmic resistance and anticipates that a membrane with lower resistivity may significantly increase the power density.展开更多
Ohmic contacts are fundamental components in semiconductor technology,facilitating efficient electrical connection and excellent device performance.We employ first-principles calculations to show that semimetallic gra...Ohmic contacts are fundamental components in semiconductor technology,facilitating efficient electrical connection and excellent device performance.We employ first-principles calculations to show that semimetallic graphene is a natural Ohmic contact partner of monolayer semiconducting black arsenic(BAs),for which the top of the valence band is below the Fermi energy of the order of 10~2 meV.The Ohmic contact arises from the giant Stark effect induced by van der Waals electron transfer from BAs to graphene,which does not destroy their respective band features.Remarkably,we show that this intrinsic Ohmic contact remains robust across a wide range of interlayer distances(adjustable by strain)or vertical electric fields,whereas the weak spin splitting of the order of 1 meV induced by symmetry breaking plays little part in Ohmic contact.These findings reveal the potential applications of graphene–BAs in ultralow dissipation transistors.展开更多
The design of customized crystal plane heterojunction can effectively leverage the optimal anisotropic interaction of crystal plane,thereby enhancing photocatalytic activity.In this study,Co_(3)O_(4) exposed(111),(110...The design of customized crystal plane heterojunction can effectively leverage the optimal anisotropic interaction of crystal plane,thereby enhancing photocatalytic activity.In this study,Co_(3)O_(4) exposed(111),(110),and(100)crystal planes(designated as HCO,NCO,and CCO,respectively)were synthesized and successfully coupled with Cd_(0.5)Zn_(0.5)S(CZS).Among these composites,the HCO/CZS exhibited best hydrogen evolution activity.In conjunction with DFT calculations and femtosecond transient absorption spectroscopy,it has been found that:the crystal plane interaction between HCO and CZS enabled the composite catalyst to exhibit optimal anisotropy in crystal plane carrier transport,crystal plane active sites,and crystal plane electronic structure.This interaction induces a redistribution of electrons at their contact interface,thereby establishing a built-in electric field that facilitates the formation of ohmic heterojunction between HCO and CZS.The synergistic effect of the ohmic heterojunction and crystal plane anisotropy not only decreases the Gibbs free energy of hydrogen adsorption but also facilitates the efficient spatial separation and rapid transfer of electron-hole pairs.This study offers valuable insights into the customization of crystal plane heterojunctions,aiming to maximize anisotropic interactions between crystal planes in order to enhance photocatalytic hydrogen evolution.展开更多
N-wells are created by P＋ ion implantation into Si-faced p-type 4H-SiC epilayer. Ti and Ni are deposited in sequence on the surface of the active regions. Ni2Si is identified as the dominant phase by X-ray diffracti...N-wells are created by P＋ ion implantation into Si-faced p-type 4H-SiC epilayer. Ti and Ni are deposited in sequence on the surface of the active regions. Ni2Si is identified as the dominant phase by X-ray diffraction （XRD） analysis after metallization annealing. An amorphous C film at the Ni2 Si/SiC interface is confirmed by an X-ray energy-dispersive spectrometer （XEDS）. The Ni2Si and amorphous C film are etched away selectively,followed by deposition of new metal films without annealing. Measurement of the current-voltage characteristics shows that the contacts are still ohmic after the Ni2 Si and amorphous C film are replaced by new metal films. The sheet resistance Rsh of the implanted layers decreases from 975 to 438f2/D, because carbon vacancies （Vc） appeared during annealing,which act as donors for electrons in SiC.展开更多
An investigation of Au/Ti/Ni and Au/Ti/Pt ohmic contacts to n-type 4H-SiC and the behavior of metal films on SiC with thermal anneals is reported. Specific contact resistance as low as 2. 765 x 10^-6Ω·cm^2 was a...An investigation of Au/Ti/Ni and Au/Ti/Pt ohmic contacts to n-type 4H-SiC and the behavior of metal films on SiC with thermal anneals is reported. Specific contact resistance as low as 2. 765 x 10^-6Ω·cm^2 was achieved after rapid thermal annealing in N2 for 2min at 950℃. SIMS analysis shows that the formation of Ni silicide after annealing supported a number of carbon atoms＇ outdiffusion from the SiC to form interstitial compound TiC. This process can create abundant C vacancies near the interface. It is the carbon defect layer that enhances the defect-assisted tunneling. The interface band structure within the defect level could make it clear why the metal-SiC contacts become ohmic during annealing.展开更多
Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si...Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.展开更多
A novel structure of ideal ohmic contact p^＋ （SiGeC）-n^- -n^＋ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. U...A novel structure of ideal ohmic contact p^＋ （SiGeC）-n^- -n^＋ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. Using MEDICI, the physical parameter models applicable for SiGeC/Si heterojunction power diodes are given. The simulation results indicate that the diodes with graded doping concentration in the base region not only have the merit of fast and soft reverse recovery but also double reverse blocking voltage,and their forward conducting voltage has dropped to some extent,compared to the diodes with constant doping concentration in the base region. The new structure achieves a good trade-off in Qs-Vf-Ir ,and its combination of properties is superior to ideal ohmic contact diodes and conventional diodes.展开更多
A pre-ohmic micro-patterned recess process,is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier(UTB)AlGaN/GaN heterostructure,featuring a significantly reduced ohmic contact resistivity of 0.56...A pre-ohmic micro-patterned recess process,is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier(UTB)AlGaN/GaN heterostructure,featuring a significantly reduced ohmic contact resistivity of 0.56Ω·mm at an alloy temperature of 550℃.The sheet resistances increase with the temperature following a power law with the index of +2.58,while the specific contact resistivity decreases with the temperature.The contact mechanism can be well described by thermionic field emission(TFE).The extracted Schottky barrier height and electron concentration are 0.31 eV and 5.52×10^(18) cm^(−3),which suggests an intimate contact between ohmic metal and the UTB-AlGaN as well as GaN buffer.A good correlation between ohmic transfer length and the micro-pattern size is revealed,though in-depth investigation is needed.A preliminary CMOS-process-compatible metal-insulator-semiconductor high-mobility transistor(MIS-HEMT)was fabricated with the proposed Au-free ohmic contact technique.展开更多
Ohmic losses of a coaxial cavity gyrotron with outer corrugation are investigated.The results show that the averaged ohmic loss densities of the inner and outer conductors have similar changes along with the axial dir...Ohmic losses of a coaxial cavity gyrotron with outer corrugation are investigated.The results show that the averaged ohmic loss densities of the inner and outer conductors have similar changes along with the axial direction of the gyrotron;whereas averaged ohmic loss densities of the outer conductor are more than the inner conductor;the outer slot depth and width cause greatly the averaged ohmic loss densities of the corrugation bottom and the corrugation period of outer conductor,and averaged densities of ohmic losses on the inner conductor are almost unaffected.展开更多
Ohmic Heating (OH) is one of the emerging thermal technologies used in food processing which can produce rapid and uniform heating with close to 100% energy transfer efficiency. Although mathematical </span><...Ohmic Heating (OH) is one of the emerging thermal technologies used in food processing which can produce rapid and uniform heating with close to 100% energy transfer efficiency. Although mathematical </span><span style="font-family:Verdana;">modelling</span><span style="font-family:Verdana;"> for OH processes has been studied by many researchers in recent years, systematic simulations of OH have not been developed for model-based control of the processes. In this paper, </span><span style="font-family:Verdana;">mathematical</span><span style="font-family:Verdana;"> model for a Colinear Ohmic Heater is presented, analyzed, and studied based on the selected configuration. A numerical solution for the mathematical equations has been defined and proposed. MATLAB/Simulink model is hence developed and validated against the available data. Simulation results have shown that </span><span style="font-family:Verdana;">MATLAB</span><span style="font-family:Verdana;">/Simulink model can produce robust outputs at low computational costs with an accuracy of up to 99.6% in comparison to the analytical solution. This model can be used in further studies for analysis of the OH processes and development of advanced controllers.展开更多
The diffusion behavior of vanadium （V） implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- s...The diffusion behavior of vanadium （V） implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- served after 1650℃ annealing. Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region. The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method. A specific contact resistance as low as 4.4 × 10^-3Ω · cmA^2 is achieved after annealing at 1050℃ for 10min in gas ambient consisting of 90% N2 and 10% H2 X-ray diffraction analysis shows the formation of Ni2 Si and graphite phase at the interface after annealing. This provides the evidence that the car- bon vacancies,resulting from the out-diffusion of carbon atoms from SiC, contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.展开更多
We investigate the contact characteristics of bi-layer thin films, Ti（20nm）/Al（200nm） on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metalli...We investigate the contact characteristics of bi-layer thin films, Ti（20nm）/Al（200nm） on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity pc was determined using the circular transmission line method via current-voltage measurements. A pc of 3.42 × 10^-4 Ω·cm^2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p- i-n detectors and the detectors＇ performances, such as spectral responsivity, dark-current,and breakdown voltage were optimized.展开更多
A new 300 MVA/1350 MJ motor generator （MG） will be built to feed all of the poloidal field power supplies （PFPS） and auxiliary heating power supplies of the HL-2M tokamak. The MG has a vertical-shaft salient pole ...A new 300 MVA/1350 MJ motor generator （MG） will be built to feed all of the poloidal field power supplies （PFPS） and auxiliary heating power supplies of the HL-2M tokamak. The MG has a vertical-shaft salient pole 6-phase synchronous generator and a coaxial 8500 kW induction motor. The Ohmic heating power supply （OHPS） consisting of 4-quadrant DC pulsed convertor is the one with the highest parameters among the PFPS. Therefore, the match between the generator and the OHPS is very important. The matching study with Matlab/Simulink is described in this paper. The simulation results show that the subtransient reactance of the generator is closely related to the inversion operation of the OHPS. By setting various subtransient reactance in the simulation generator model and considering the cost reduction, the optimized parameters are obtained as xd＂ = 0.405 p.u. at 100 Hz for the generator. The models built in the simulation can be used as an important tool for studying the dynamic characteristics and the control strategy of other HL-2M PFPSes.展开更多
The rapid recombination of photo-generated electron-hole pairs,insufficient active sites,and strong photocorrosion have considerably restricted the practical application of Cd S in photocatalytic fields.Herein,we desi...The rapid recombination of photo-generated electron-hole pairs,insufficient active sites,and strong photocorrosion have considerably restricted the practical application of Cd S in photocatalytic fields.Herein,we designed and constructed a 2D/2D/2D layered heterojunction photocatalyst with cascaded 2D coupling interfaces.Experiments using electron spin resonance spectroscopy,ultraviolet photoelectron spectroscopy,and in-situ irradiation X-ray photoelectron spectroscopy were conducted to confirm the 2D layered CdS/WO_(3) step-scheme(S-scheme)heterojunctions and CdS/MX ohmic junctions.Impressively,it was found that the strong interfacial electric fields in the S-scheme heterojunction photocatalysts could effectively promote spatially directional charge separation and transport between CdS and WO_(3) nanosheets.In addition,2D Ti_(3)C_(2) MXene nanosheets with a smaller work function and excellent metal conductivity when used as a co-catalyst could build ohmic junctions with Cd S nanosheets,thus providing a greater number of electron transfer pathways and hydrogen evolution sites.Results showed that the highest visible-light hydrogen evolution rate of the optimized MX-Cd S/WO_(3) layered multi-heterostructures could reach as high as 27.5 mmol/g/h,which was 11.0 times higher than that of pure CdS nanosheets.Notably,the apparent quantum efficiency reached 12.0% at 450 nm.It is hoped that this study offers a reliable approach for developing multifunctional photocatalysts by integrating S-scheme and ohmic-junction built-in electric fields and rationally designing a 2D/2D interface for efficient light-to-hydrogen fuel production.展开更多
Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temper...Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).展开更多
Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperatu...Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperature annealing,the phase of nickel-silicon compound can be observed with X-ray diffraction,and the contact resistance also changes.A comparative experiment was designed to use X-ray diffraction and energy-dispersive spectroscopy to clarify the difference of ohmic-contact material composition and elemental analysis between samples prepared using pulsed laser annealing and rapid thermal annealing.It is found that more Ni2Si and carbon vacancies formed at the interface in the sample prepared using pulsed laser annealing,resulting in a better ohmic-contact characteristic.展开更多
基金supported by the National Natural Science Foundation of China(22308345)the Anhui Provincial Natural Science Foundation(2308085QB68)the Fundamental Research Funds for the Central Universities(WK2060000059).
文摘Aqueous organic redox flow batteries(AORFBs)exploit the reversible electrochemical reactions of watersoluble organic redox-active species to store electricity and have emerged as promising electrochemical energy storage technologies.To improve the battery performance related to the cell resistance,such as the power density and energy efficiency,it is essential to understand the cell resistance and determine the major contributor.Here,we conduct comprehensive electrochemical impedance spectroscopy(EIS)studies and cell polarization on a representative TEMPTMA/MV cell assembled with a commercial AMVN membrane and probe the proportion of the ohmic resistance to the total cell resistance at various stages of charge(SOCs)ranging from 10%to 100%.At 0 mA·cm^(−2),the ohmic resistance is responsible for 60.3%–71.7%of the resistance of the entire cell,whereas at high current densities(for example,when the power density reaches the maximum),the ohmic resistance still contributes 47.9%–61.4%.Our quantitative analysis highlights the dominance of the ohmic resistance and anticipates that a membrane with lower resistivity may significantly increase the power density.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62374088 and 12074193)。
文摘Ohmic contacts are fundamental components in semiconductor technology,facilitating efficient electrical connection and excellent device performance.We employ first-principles calculations to show that semimetallic graphene is a natural Ohmic contact partner of monolayer semiconducting black arsenic(BAs),for which the top of the valence band is below the Fermi energy of the order of 10~2 meV.The Ohmic contact arises from the giant Stark effect induced by van der Waals electron transfer from BAs to graphene,which does not destroy their respective band features.Remarkably,we show that this intrinsic Ohmic contact remains robust across a wide range of interlayer distances(adjustable by strain)or vertical electric fields,whereas the weak spin splitting of the order of 1 meV induced by symmetry breaking plays little part in Ohmic contact.These findings reveal the potential applications of graphene–BAs in ultralow dissipation transistors.
文摘The design of customized crystal plane heterojunction can effectively leverage the optimal anisotropic interaction of crystal plane,thereby enhancing photocatalytic activity.In this study,Co_(3)O_(4) exposed(111),(110),and(100)crystal planes(designated as HCO,NCO,and CCO,respectively)were synthesized and successfully coupled with Cd_(0.5)Zn_(0.5)S(CZS).Among these composites,the HCO/CZS exhibited best hydrogen evolution activity.In conjunction with DFT calculations and femtosecond transient absorption spectroscopy,it has been found that:the crystal plane interaction between HCO and CZS enabled the composite catalyst to exhibit optimal anisotropy in crystal plane carrier transport,crystal plane active sites,and crystal plane electronic structure.This interaction induces a redistribution of electrons at their contact interface,thereby establishing a built-in electric field that facilitates the formation of ohmic heterojunction between HCO and CZS.The synergistic effect of the ohmic heterojunction and crystal plane anisotropy not only decreases the Gibbs free energy of hydrogen adsorption but also facilitates the efficient spatial separation and rapid transfer of electron-hole pairs.This study offers valuable insights into the customization of crystal plane heterojunctions,aiming to maximize anisotropic interactions between crystal planes in order to enhance photocatalytic hydrogen evolution.
文摘N-wells are created by P＋ ion implantation into Si-faced p-type 4H-SiC epilayer. Ti and Ni are deposited in sequence on the surface of the active regions. Ni2Si is identified as the dominant phase by X-ray diffraction （XRD） analysis after metallization annealing. An amorphous C film at the Ni2 Si/SiC interface is confirmed by an X-ray energy-dispersive spectrometer （XEDS）. The Ni2Si and amorphous C film are etched away selectively,followed by deposition of new metal films without annealing. Measurement of the current-voltage characteristics shows that the contacts are still ohmic after the Ni2 Si and amorphous C film are replaced by new metal films. The sheet resistance Rsh of the implanted layers decreases from 975 to 438f2/D, because carbon vacancies （Vc） appeared during annealing,which act as donors for electrons in SiC.
文摘An investigation of Au/Ti/Ni and Au/Ti/Pt ohmic contacts to n-type 4H-SiC and the behavior of metal films on SiC with thermal anneals is reported. Specific contact resistance as low as 2. 765 x 10^-6Ω·cm^2 was achieved after rapid thermal annealing in N2 for 2min at 950℃. SIMS analysis shows that the formation of Ni silicide after annealing supported a number of carbon atoms＇ outdiffusion from the SiC to form interstitial compound TiC. This process can create abundant C vacancies near the interface. It is the carbon defect layer that enhances the defect-assisted tunneling. The interface band structure within the defect level could make it clear why the metal-SiC contacts become ohmic during annealing.
文摘Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.
文摘A novel structure of ideal ohmic contact p^＋ （SiGeC）-n^- -n^＋ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. Using MEDICI, the physical parameter models applicable for SiGeC/Si heterojunction power diodes are given. The simulation results indicate that the diodes with graded doping concentration in the base region not only have the merit of fast and soft reverse recovery but also double reverse blocking voltage,and their forward conducting voltage has dropped to some extent,compared to the diodes with constant doping concentration in the base region. The new structure achieves a good trade-off in Qs-Vf-Ir ,and its combination of properties is superior to ideal ohmic contact diodes and conventional diodes.
基金supported by National Natural Science Foundation of China under Grant 61822407,Grant 62074161,and Grant 11634002in part by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(CAS)under Grant QYZDB-SSW-JSC012+3 种基金in part by the National Key Research and Development Program of China under Grant 2016YFB0400105 and Grant 2017YFB0403000in part by the Youth Innovation Promotion Association of CASin part by the University of Chinese Academy of Sciencesand in part by the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,CAS.
文摘A pre-ohmic micro-patterned recess process,is utilized to fabricate Ti/Al/Ti/TiN ohmic contact to an ultrathin-barrier(UTB)AlGaN/GaN heterostructure,featuring a significantly reduced ohmic contact resistivity of 0.56Ω·mm at an alloy temperature of 550℃.The sheet resistances increase with the temperature following a power law with the index of +2.58,while the specific contact resistivity decreases with the temperature.The contact mechanism can be well described by thermionic field emission(TFE).The extracted Schottky barrier height and electron concentration are 0.31 eV and 5.52×10^(18) cm^(−3),which suggests an intimate contact between ohmic metal and the UTB-AlGaN as well as GaN buffer.A good correlation between ohmic transfer length and the micro-pattern size is revealed,though in-depth investigation is needed.A preliminary CMOS-process-compatible metal-insulator-semiconductor high-mobility transistor(MIS-HEMT)was fabricated with the proposed Au-free ohmic contact technique.
基金Supported by the Scientific Research Foundation of Sichuan Provincal Department of Education under Grant No 10ZC059。
文摘Ohmic losses of a coaxial cavity gyrotron with outer corrugation are investigated.The results show that the averaged ohmic loss densities of the inner and outer conductors have similar changes along with the axial direction of the gyrotron;whereas averaged ohmic loss densities of the outer conductor are more than the inner conductor;the outer slot depth and width cause greatly the averaged ohmic loss densities of the corrugation bottom and the corrugation period of outer conductor,and averaged densities of ohmic losses on the inner conductor are almost unaffected.
文摘Ohmic Heating (OH) is one of the emerging thermal technologies used in food processing which can produce rapid and uniform heating with close to 100% energy transfer efficiency. Although mathematical </span><span style="font-family:Verdana;">modelling</span><span style="font-family:Verdana;"> for OH processes has been studied by many researchers in recent years, systematic simulations of OH have not been developed for model-based control of the processes. In this paper, </span><span style="font-family:Verdana;">mathematical</span><span style="font-family:Verdana;"> model for a Colinear Ohmic Heater is presented, analyzed, and studied based on the selected configuration. A numerical solution for the mathematical equations has been defined and proposed. MATLAB/Simulink model is hence developed and validated against the available data. Simulation results have shown that </span><span style="font-family:Verdana;">MATLAB</span><span style="font-family:Verdana;">/Simulink model can produce robust outputs at low computational costs with an accuracy of up to 99.6% in comparison to the analytical solution. This model can be used in further studies for analysis of the OH processes and development of advanced controllers.
文摘The diffusion behavior of vanadium （V） implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- served after 1650℃ annealing. Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region. The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method. A specific contact resistance as low as 4.4 × 10^-3Ω · cmA^2 is achieved after annealing at 1050℃ for 10min in gas ambient consisting of 90% N2 and 10% H2 X-ray diffraction analysis shows the formation of Ni2 Si and graphite phase at the interface after annealing. This provides the evidence that the car- bon vacancies,resulting from the out-diffusion of carbon atoms from SiC, contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.
文摘We investigate the contact characteristics of bi-layer thin films, Ti（20nm）/Al（200nm） on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity pc was determined using the circular transmission line method via current-voltage measurements. A pc of 3.42 × 10^-4 Ω·cm^2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p- i-n detectors and the detectors＇ performances, such as spectral responsivity, dark-current,and breakdown voltage were optimized.
文摘A new 300 MVA/1350 MJ motor generator （MG） will be built to feed all of the poloidal field power supplies （PFPS） and auxiliary heating power supplies of the HL-2M tokamak. The MG has a vertical-shaft salient pole 6-phase synchronous generator and a coaxial 8500 kW induction motor. The Ohmic heating power supply （OHPS） consisting of 4-quadrant DC pulsed convertor is the one with the highest parameters among the PFPS. Therefore, the match between the generator and the OHPS is very important. The matching study with Matlab/Simulink is described in this paper. The simulation results show that the subtransient reactance of the generator is closely related to the inversion operation of the OHPS. By setting various subtransient reactance in the simulation generator model and considering the cost reduction, the optimized parameters are obtained as xd＂ = 0.405 p.u. at 100 Hz for the generator. The models built in the simulation can be used as an important tool for studying the dynamic characteristics and the control strategy of other HL-2M PFPSes.
文摘The rapid recombination of photo-generated electron-hole pairs,insufficient active sites,and strong photocorrosion have considerably restricted the practical application of Cd S in photocatalytic fields.Herein,we designed and constructed a 2D/2D/2D layered heterojunction photocatalyst with cascaded 2D coupling interfaces.Experiments using electron spin resonance spectroscopy,ultraviolet photoelectron spectroscopy,and in-situ irradiation X-ray photoelectron spectroscopy were conducted to confirm the 2D layered CdS/WO_(3) step-scheme(S-scheme)heterojunctions and CdS/MX ohmic junctions.Impressively,it was found that the strong interfacial electric fields in the S-scheme heterojunction photocatalysts could effectively promote spatially directional charge separation and transport between CdS and WO_(3) nanosheets.In addition,2D Ti_(3)C_(2) MXene nanosheets with a smaller work function and excellent metal conductivity when used as a co-catalyst could build ohmic junctions with Cd S nanosheets,thus providing a greater number of electron transfer pathways and hydrogen evolution sites.Results showed that the highest visible-light hydrogen evolution rate of the optimized MX-Cd S/WO_(3) layered multi-heterostructures could reach as high as 27.5 mmol/g/h,which was 11.0 times higher than that of pure CdS nanosheets.Notably,the apparent quantum efficiency reached 12.0% at 450 nm.It is hoped that this study offers a reliable approach for developing multifunctional photocatalysts by integrating S-scheme and ohmic-junction built-in electric fields and rationally designing a 2D/2D interface for efficient light-to-hydrogen fuel production.
基金the National Key Research and Development Program of China(2017YFE0131500)the Key Research and Development Program of Guangdong Province(2020B090922001)+2 种基金National Natural Science Foundation of China(61834008)Key Research and Development Program of Jiangsu province(BE2020004,BE2021008-1)Guangdong Basic and Applied Basic Research Foundation(2019B1515120091).
文摘Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).
基金supported by Shenzhen Science and Technology Program(Grant No.KQTD2017033016491218).
文摘Nickel is an excellent ohmic-contact metal on 4H-SiC.This paper discusses the formation mechanism of nickel ohmic contact on 4HSiC by assessing the electrical properties and microstructural change.Under high-temperature annealing,the phase of nickel-silicon compound can be observed with X-ray diffraction,and the contact resistance also changes.A comparative experiment was designed to use X-ray diffraction and energy-dispersive spectroscopy to clarify the difference of ohmic-contact material composition and elemental analysis between samples prepared using pulsed laser annealing and rapid thermal annealing.It is found that more Ni2Si and carbon vacancies formed at the interface in the sample prepared using pulsed laser annealing,resulting in a better ohmic-contact characteristic.
