Hexagonal boron nitride(h-BN)is found to have widespread application,owing to its outstanding properties,including gate dielectrics,passivation layers,and tunneling layers.The current studies on the funda⁃mental physi...Hexagonal boron nitride(h-BN)is found to have widespread application,owing to its outstanding properties,including gate dielectrics,passivation layers,and tunneling layers.The current studies on the funda⁃mental physical properties of these ultrathin h-BN films and the electron tunneling effect among them are inade⁃quate.In this work,the effective mass in h-BN was successfully determined through a combined approach of ex⁃perimental and theoretical research methods by fitting the current-voltage curves of metal/insulator/metal struc⁃tures.It was observed that within a range of 4-22 layers,the effective mass of h-BN exhibits a monotonic de⁃crease with an increase in the number of layers.The physical parameters of the Fowler-Nordheim tunneling model in the context of electron tunneling in h-BN are precisely ascertained by utilizing the extracted effective mass.Ad⁃ditionally,the impact of fixed charges at the metal/h-BN interface and various metal electrode types on FowlerNordheim tunneling within this structure is investigated utilizing this physical parameter in Sentaurus TCAD soft⁃ware.This work is informative and instructive in promoting applications in the fields of h-BN related infrared physics and technology.展开更多
Heterostructures based on diverse two-dimensional(2D)materials are effective for tailoring and further promoting device performance and exhibit considerable potential in photodetection.However,the problem of high-dens...Heterostructures based on diverse two-dimensional(2D)materials are effective for tailoring and further promoting device performance and exhibit considerable potential in photodetection.However,the problem of high-density thermionic carriers can be hardly overcome in most reported heterostructure devices based on type I and type II band alignment,which leads to an unacceptably small Iphoto/Idark and strong temperature dependence that limit the performance of photodetectors.Here,using the MoTe_(2)/h-BN/MoTe_(2)/h-BN heterostructure,we report the hole-dominated Fowler–Nordheim quantum tunneling transport in both on and off states.The state-of-the-art device operating at room temperature shows high detectivity of>10^(8) Jones at a laser power density of<0.3 nW μm^(-2) from the visible to near infrared range.In addition,the fast on–off switching and highly sensitive photodetection properties promise superior imaging capabilities.The tunneling mechanism,in combination with other unique properties of 2D materials,is significant for novel photodetection.展开更多
A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell...A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell is programmed by band to band tunneling induced hot electron (BBHE) injection method at the drain,and erased by Fowler Nordheim tunneling through the source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4×10 -4 and 60μA/μm,respectively,and the program time can be as short as 16μs展开更多
基金Supported by the National Natural Science Foundation of China(62074085,62104118)。
文摘Hexagonal boron nitride(h-BN)is found to have widespread application,owing to its outstanding properties,including gate dielectrics,passivation layers,and tunneling layers.The current studies on the funda⁃mental physical properties of these ultrathin h-BN films and the electron tunneling effect among them are inade⁃quate.In this work,the effective mass in h-BN was successfully determined through a combined approach of ex⁃perimental and theoretical research methods by fitting the current-voltage curves of metal/insulator/metal struc⁃tures.It was observed that within a range of 4-22 layers,the effective mass of h-BN exhibits a monotonic de⁃crease with an increase in the number of layers.The physical parameters of the Fowler-Nordheim tunneling model in the context of electron tunneling in h-BN are precisely ascertained by utilizing the extracted effective mass.Ad⁃ditionally,the impact of fixed charges at the metal/h-BN interface and various metal electrode types on FowlerNordheim tunneling within this structure is investigated utilizing this physical parameter in Sentaurus TCAD soft⁃ware.This work is informative and instructive in promoting applications in the fields of h-BN related infrared physics and technology.
基金the funding by the National Natural Science Foundation of China(61704061 and 61974050)the financial support from the National Natural Science Foundation of China(11674119,11690030,and 11690032)+1 种基金the financial support from the National Natural Science Foundation of China(61905266)Shanghai Sailing Program(19YF1454600)。
文摘Heterostructures based on diverse two-dimensional(2D)materials are effective for tailoring and further promoting device performance and exhibit considerable potential in photodetection.However,the problem of high-density thermionic carriers can be hardly overcome in most reported heterostructure devices based on type I and type II band alignment,which leads to an unacceptably small Iphoto/Idark and strong temperature dependence that limit the performance of photodetectors.Here,using the MoTe_(2)/h-BN/MoTe_(2)/h-BN heterostructure,we report the hole-dominated Fowler–Nordheim quantum tunneling transport in both on and off states.The state-of-the-art device operating at room temperature shows high detectivity of>10^(8) Jones at a laser power density of<0.3 nW μm^(-2) from the visible to near infrared range.In addition,the fast on–off switching and highly sensitive photodetection properties promise superior imaging capabilities.The tunneling mechanism,in combination with other unique properties of 2D materials,is significant for novel photodetection.
文摘A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell is programmed by band to band tunneling induced hot electron (BBHE) injection method at the drain,and erased by Fowler Nordheim tunneling through the source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4×10 -4 and 60μA/μm,respectively,and the program time can be as short as 16μs
