[目的]探讨NDR1通过NOTCH1调控非小细胞肺癌(NSCLC)干细胞特性的潜在机制。[方法]采用流式细胞仪分析CD24-PE和CD44-FITC抗体标记的NSCLC细胞表面干细胞标志物的表达。通过ALDEFLUOR染色评估NSCLC细胞的醛脱氢酶活性,从而确定其干细胞...[目的]探讨NDR1通过NOTCH1调控非小细胞肺癌(NSCLC)干细胞特性的潜在机制。[方法]采用流式细胞仪分析CD24-PE和CD44-FITC抗体标记的NSCLC细胞表面干细胞标志物的表达。通过ALDEFLUOR染色评估NSCLC细胞的醛脱氢酶活性,从而确定其干细胞特性。采用免疫印迹法分析NOTCH1通路的激活情况。[结果]与对照组相比,过表达NDR1后,NSCLC细胞中CD24_(Low)/CD44_(High)细胞比例(37.81±3.63 vs 58.56±7.11;P<0.05)和ALDEFLUO细胞水平(15.17±3.13 vs 26.44±4.13;P<0.05)显著上升。过表达NDR1后,NSCLC细胞中NOTCH1表达水平上升。敲低NOTCH1后,NSCLC细胞中CD24_(Low)/CD44_(High)细胞比例(35.40±3.67 vs 5.04±1.16;P<0.05)和ALDEFLUO细胞水平(15.77±2.82 vs 5.28±0.89;P<0.05)显著下降。此外,敲低NOTCH1后,NSCLC细胞中NOTCH1、c-Myc和HES1的表达水平下降,而过表达NOTCH1后,这些基因表达水平上升。[结论]NDR1通过激活NOTCH1通路提升了NSCLC细胞的干细胞特性(37.81±3.63 vs 58.56±7.11)。展开更多
A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is ...A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is larger than 120. By use of device simulation,the cause of NDR is that increasing collector voltage makes the ultrathin base reach through and the device transforms from a bipolar state to a bulk barrier state. In addition, the simulated cutoff frequency is about 60-80GHz.展开更多
文摘[目的]探讨NDR1通过NOTCH1调控非小细胞肺癌(NSCLC)干细胞特性的潜在机制。[方法]采用流式细胞仪分析CD24-PE和CD44-FITC抗体标记的NSCLC细胞表面干细胞标志物的表达。通过ALDEFLUOR染色评估NSCLC细胞的醛脱氢酶活性,从而确定其干细胞特性。采用免疫印迹法分析NOTCH1通路的激活情况。[结果]与对照组相比,过表达NDR1后,NSCLC细胞中CD24_(Low)/CD44_(High)细胞比例(37.81±3.63 vs 58.56±7.11;P<0.05)和ALDEFLUO细胞水平(15.17±3.13 vs 26.44±4.13;P<0.05)显著上升。过表达NDR1后,NSCLC细胞中NOTCH1表达水平上升。敲低NOTCH1后,NSCLC细胞中CD24_(Low)/CD44_(High)细胞比例(35.40±3.67 vs 5.04±1.16;P<0.05)和ALDEFLUO细胞水平(15.77±2.82 vs 5.28±0.89;P<0.05)显著下降。此外,敲低NOTCH1后,NSCLC细胞中NOTCH1、c-Myc和HES1的表达水平下降,而过表达NOTCH1后,这些基因表达水平上升。[结论]NDR1通过激活NOTCH1通路提升了NSCLC细胞的干细胞特性(37.81±3.63 vs 58.56±7.11)。
文摘A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique. It has a particular and obvious voltage-controlled NDR whose PVCR is larger than 120. By use of device simulation,the cause of NDR is that increasing collector voltage makes the ultrathin base reach through and the device transforms from a bipolar state to a bulk barrier state. In addition, the simulated cutoff frequency is about 60-80GHz.
